A5100709460- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Thin-Film Transistor Technologies
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Neural Networks and Reservoir Computing
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- 2D Materials and Applications
- Conducting polymers and applications
- Neural dynamics and brain function
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and interfaces
- Microwave Engineering and Waveguides
- Perovskite Materials and Applications
- Radio Frequency Integrated Circuit Design
- Topological Materials and Phenomena
- Advanced Thermoelectric Materials and Devices
- Organic and Molecular Conductors Research
- Electron and X-Ray Spectroscopy Techniques
Fuzhou University
2025
Nanjing University of Posts and Telecommunications
2022-2024
Guangdong Greater Bay Area Institute of Integrated Circuit and System
2024
University of Electronic Science and Technology of China
2024
Southwest University of Science and Technology
2024
Nanjing University
2005-2023
Collaborative Innovation Center of Advanced Microstructures
2015-2023
Ningbo University
2023
Guilin University of Electronic Technology
2023
Beijing Jiaotong University
2023
Freestanding synaptic transistors are fabricated on solution-processed chitosan membranes. A short-term memory to long-term transition is observed due proton-related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial devices with multiple presynaptic inputs investigated, and spiking logic operation modulation realized.
The biological visual system encodes optical information into spikes and processes them by the neural network, which enables perception with high throughput of processing ultralow energy budget. This has inspired a wide spectrum devices to imitate such process, while precise mimicking procedure is still highly required. Here, bio-realistic photoelectric spiking neuron for depth presented. firing generated TaOX memristive encoders have biologically similar frequency range 1-200 Hz sub-micro...
The cone photoreceptors in our eyes selectively transduce the natural light into spiking representations, which endows brain with high energy-efficiency color vision. However, cone-like device color-selectivity and spike-encoding capability remains challenging. Here, we propose a metal oxide-based vertically integrated photoreceptor array, can directly persistent lights spike trains at certain rate according to input wavelengths. Such have an ultralow power consumption of less than 400...
Human brain outperforms the current von Neumann digital computer in many aspects, such as energy efficiency and fault‐tolerance. Inspired by human brain, neuromorphic computation has attracted increasing research interest. In recent years, emerging devices are widely developed for computing. Herein, progress on transistor‐based is presented. First, a brief introduction of biological synaptic neuronal functions given. Then operation principles latest transistors, including ion‐gate...
Abstract Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on topic IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews recent progress major trends field IGZO-based TFTs. After a brief introduction history main advantages TFTs, an overview materials is given. In this part, material electron...
Abstract The two-dimensional topological insulators host a full gap in the bulk band, induced by spin–orbit coupling (SOC) effect, together with topologically protected gapless edge states. However, it is usually challenging to suppress conductance and thus realize quantum spin Hall (QSH) effect. In this study, we find mechanism effectively conductance. By using quasiparticle interference technique scanning tunneling spectroscopy, demonstrate that QSH candidate single-layer 1 T ’-WTe 2 has...
Abstract In this context, a simple, nontoxic, and eco‐friendly fully water‐induced (WI) route to fabricate ternary ZrGdO x thin films at various annealing temperatures is reported. Annealing temperature dependent microstructure, morphology, optical, electrical properties, chemical bonding states of the WI are investigated by x‐ray diffraction, atomic force microscopy, optical spectroscopy, photoelectron measurements. A low leakage current density 10 −8 cm −2 1 mV −1 large areal capacitance...
To realize a topological superconductor is one of the most attracting topics because its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into van der Waals gap type II Weyl semimetal WTe2 and discover superconducting state KxWTe2 through both electrical transport scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, also uncover coexistence positive magnetoresistance state....
Neuromorphic devices are of great significance for next generation energy-efficient brain-like computing and perception. Oxide-based photoelectric neuromorphic transistors very promising due to the proton-related electric-double-layer (EDL) effect persistent photoconductivity behavior. In this study, indium-gallium-zinc-oxide (IGZO)-based thin-film (TFTs) with tunable synaptic plasticity proposed. Some important functions, such as excitatory postsynaptic current, multipulse facilitation,...
Brain-inspired electronics represent a promising paradigm to resolve the energy and time bottlenecks in conventional digital machines. Recent advances have spanned both computing sensing by imitating naturally evolved biological approaches, emerging neuromorphic perception devices are recognized as building blocks for implementing so-called in-memory in-sensor computing. Therefore, it is urgent review recent achievements regarding these provide perspective future development. In this review,...
Two-dimensional (2D) materials and their in-plane out-of-plane (i.e., van der Waals, vdW) heterostructures are promising building blocks for next-generation electronic optoelectronic devices. Since the performance of devices is strongly dependent on crystalline quality interface characteristics heterostructures, a fast nondestructive method distinguishing characterizing various 2D desirable to promote device integrations. In this work, based color space information materials' optical...
Solution based deposition has been recently considered as a viable option for low-cost flexible electronics.
Low-temperature sol-gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm(2) due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such show on/off ratio (>10(7)) and very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, as paired pulse facilitation, was successfully emulated. Most importantly, spiking...
Abstract Photoexcited corneal nociceptor (PCN) can recognize the noxious light stimulus and generate/transmit pain signals to central nervous system, enabling early‐warning and/or risk avoidance for individual. Futhermore, pain‐modulation enhance or relieve pain, which greatly assists human adaptation environments. Emulation of PCN by neuromorphic devices will improve intelligence humanoid robots artificial eyes in real world. Here, amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) based...
Hardware implementation of Bienenstock–Cooper–Munro (BCM) learning rules would be great implications toward artificial intelligent systems. In this work, amorphous indium gallium zinc oxide (a-IGZO)-based photoelectronic neuromorphic transistors were proposed for mimicking BCM rules. A SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electrolyte film with a large electric-double-layer capacitance ( <inline-formula...
We propose an indium gallium zinc oxide (IGZO) nanofiber based photoelectric synapse. Long-term potentiation and depression emulations are realized by exploiting optical electrical stimulus as the excitatory inhibitory inputs, respectively. Significantly, IGZO nanofiber-based synapse exhibit multilevel characteristics (up to 10 bits) with low updating energy (~1.0 fJ). Furthermore, artificial neural network (ANN) on is built evaluated through simulations. The performance indicates more than...
Synaptic plasticity divided into long-term and short-term categories is regarded as the origin of memory learning, which also inspires construction neuromorphic systems. However, it difficult to mimic two behaviors monolithically, due lack time-tailoring approaches for a certain synaptic device. In this Letter, indium-gallium-zinc-oxide (IGZO) nanofiber-based photoelectric transistors are proposed realizing tunable by indium composition ratio. Notably, transition can be realized increasing...
Abstract Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing nanofiber networks (NFNs) to act as potential building blocks use fundamental elements is considered be approach torealize high‐performance However, high processing temperatures and...
Solution-driven metal–oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> semiconductor layer with thickness of about 7 nm at low temperature. Then, in...