Lin Gan

ORCID: 0000-0003-1586-1199
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About
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Research Areas
  • 2D Materials and Applications
  • Graphene research and applications
  • Perovskite Materials and Applications
  • Nanowire Synthesis and Applications
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • Advancements in Battery Materials
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ga2O3 and related materials
  • X-ray Diffraction in Crystallography
  • Chalcogenide Semiconductor Thin Films
  • Molecular Junctions and Nanostructures
  • Crystallization and Solubility Studies
  • Graphene and Nanomaterials Applications
  • Organic Electronics and Photovoltaics
  • Advanced Photocatalysis Techniques
  • Advanced Cellulose Research Studies
  • Plasmonic and Surface Plasmon Research
  • Advanced Sensor and Energy Harvesting Materials
  • Conducting polymers and applications
  • Supercapacitor Materials and Fabrication
  • Advanced Battery Materials and Technologies

Southwest University
2019-2024

Tsinghua University
2020-2024

Huazhong University of Science and Technology
2015-2024

Xiamen University
2024

University of Chicago
2024

Shanghai Customs College
2022

Wuhan National Laboratory for Optoelectronics
2019

Taiyuan University of Technology
2018

Shaanxi University of Science and Technology
2018

University of Hong Kong
2004-2017

High-quality ultrathin single-crystalline SnSe2 flakes are synthesized under atmospheric-pressure chemical vapor deposition for the first time. A high-performance photodetector based on individual flake demonstrates a high photoresponsivity of 1.1 × 103 W−1, EQE 2.61 105%, and superb detectivity 1.01 1010 Jones, combined with fast rise decay times 14.5 8.1 ms, respectively. As service to our authors readers, this journal provides supporting information supplied by authors. Such materials...

10.1002/adma.201503873 article EN Advanced Materials 2015-11-06

In this critical review, we mainly focus on the current developments of gas sensors based typical 2D layered nanomaterials, including graphene, MoS<sub>2</sub>, MoSe<sub>2</sub>, WS<sub>2</sub>, SnS<sub>2</sub>, VS<sub>2</sub>, black phosphorus (BP), h-BN, and g-C<sub>3</sub>N<sub>4</sub>.

10.1039/c5qi00251f article EN Inorganic Chemistry Frontiers 2016-01-01

2D SnS 2 nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, controllable large‐size growth of ultrathin still remains a great challenge and photodetectors based on suffer from low responsivity, thus hindering their further applications so far. Herein, an improved chemical vapor deposition route is provided to synthesize nanosheets, side length which can surpass 150 μm. Then, nanosheet‐based...

10.1002/adfm.201600318 article EN Advanced Functional Materials 2016-04-13

Monolayer of 2D transition metal dichalcogenides, with a thickness less than 1 nm, paves feasible path to the development ultrathin memristive synapses, fulfill requirements for constructing large-scale high density 3D stacking neuromorphic chips. Herein, devices based on monolayer n-MoS2 p-Si substrate large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated. Versatile synaptic functions, such as potentiation/habituation,...

10.1002/smll.201800079 article EN Small 2018-03-05

β‐In 2 S 3 is a natural defective III–VI semiconductor attracting considerable interests but lack of efficient method for its 2D form fabrication. Here, the first time, this paper reports controlled synthesis ultrathin flakes via facile space‐confined chemical vapor deposition method. The defects in crystals, clearly revealed by optical spectra and optoelectronic measurement, strongly modulate (opto)‐electronic as‐fabricated render it broad detection range from visible to near‐infrared....

10.1002/adfm.201702448 article EN Advanced Functional Materials 2017-08-01

Subcentimeter single-crystalline graphene grains, with diameter up to 5.9 mm, have been successfully synthesized by tuning the nucleation density during atmospheric pressure chemical vapor deposition. Morphology studies show existence of a single large nanoparticle (>~20 nm in diameter) at geometric center those grains. Similar size particles were produced slightly oxidizing copper surface obtain oxide nanoparticles Ar-only environments, followed reduction into under H2/Ar environment, and...

10.1021/nn404393b article EN ACS Nano 2013-09-23

Hexagonal crystalline ultrathin ReSe2 flakes are synthesized for the first time by a chemical vapor deposition (CVD) method. The as-synthesized flake is revealed as novel structure, which has mirror-symmetric single-crystal domains inside, polarization incident Raman and HRTEM. successful development of CVD method will facilitate research on anisotropic electronic/optoelectronic properties in future. As service to our authors readers, this journal provides supporting information supplied...

10.1002/adma.201601977 article EN Advanced Materials 2016-07-08

Rhenium disulfide (ReS 2 ) is attracting more and attention for its thickness‐depended direct band gap. As a new appearing 2D transition metal dichalcogenide, the studies on synthesis method via chemical vapor deposition (CVD) still rare. Here systematically study CVD growth of continuous bilayer ReS film single crystalline hexagonal flake, as well their corresponding optoelectronic properties reported. Moreover, mechanism has been proposed, accompanied with simulation study....

10.1002/adfm.201601019 article EN Advanced Functional Materials 2016-04-18

As a direct-band-gap transition metal dichalcogenide (TMD), atomic thin MoS2 has attracted extensive attention in photodetection, whereas the hitherto unsolved persistent photoconductance (PPC) from ungoverned charge trapping devices severely hindered their employment. Herein, we demonstrate realization of ultrafast photoresponse dynamics monolayer by exploiting transfer interface based on surface-assembled zinc phthalocyanine (ZnPc) molecules. The formed MoS2/ZnPc van der Waals is found to...

10.1021/acsnano.8b02380 article EN ACS Nano 2018-04-12

As an important component of 2D layered materials (2DLMs), the group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well sustainable electronics optoelectronics applications. In this instructive review, booming research advancements GIVMCs in last few years been presented. First, unique crystal electronic structures are introduced, suggesting novel physical properties. Then...

10.1002/advs.201600177 article EN cc-by Advanced Science 2016-06-22

Van der Waals heterostructures from atomically thin 2D materials have opened up new realms in modern semiconductor industry. Recently, layered semiconductors such as MoS2 and SnSe2 already demonstrated excellent electronic optoelectronic properties due to their high electron mobility unique band structures. Such combination of with may provide a novel platform for the applications electronics optoelectronics. Thus, we constructed SnSe2/MoS2 based van using templates, which enrich family...

10.1088/2053-1583/aa6422 article EN 2D Materials 2017-03-17

The remarkable properties of graphene have inspired great research interest in two-dimensional layered materials (2DLMs) with novel electronic and optical attributes. As a class graphene-like 2DLMs, ultrathin group IIIA metal chalcogenides (GIIIAMCs, = In, Ga; chalcogen S, Se, Te) shown potential electronics optoelectronics. In this review, we first introduce the crystal structures their unique advantages specific applications. Then, summarize progress fabrication GIIIAMCs framework top-down...

10.1039/c5ce01986a article EN CrystEngComm 2015-11-16

It is essential for novel photodetectors to show good photoresponses, high stability, and have facile fabrication methods. Herein, an optimized electrospinning method fabricate a photodetector based on nanowire arrays that has wide spectral response range demonstrated. Arrays of ZnO‐CdO hybrid nanowires are carefully fabricated fusing ZnO CdO portions into the same subsequently assembling those regular structure. Compared pure or arrays, comparable photocurrent/dark current ratios speeds,...

10.1002/adfm.201502499 article EN Advanced Functional Materials 2015-08-27

Layer structured GeP<sub>5</sub> is firstly developed as an anode material for LIB, it delivers a reversible capacity of 2300 mA h g<sup>−1</sup> with very high initial coulombic efficiency 95%.

10.1039/c5ee02524a article EN Energy & Environmental Science 2015-01-01

ZnO nanostructure‐based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted UV region dictated by its bandgap. Herein, UV–vis–NIR sensitive consisting nanowires (NW) array/PbS quantum dots (QDs) heterostructures fabricated through modified electrospining method and an exchanging process. Besides wider compared to pure NWs based photodetectors, faster recovery speed range. Moreover, such demonstrate good flexibility as well,...

10.1002/advs.201600316 article EN cc-by Advanced Science 2016-12-30

Three isomorphous compounds M(CHOO)3[NH2(CH3)2] (M = Mn(1·Mn), Co(2·Co), Ni(3·Ni)) have been synthesized in solvothermal conditions. Single-crystal X-ray diffraction shows that they are all crystallized the trigonal space group R 3̄c with small differences lattice parameters. Bridged by three-atom single-bridge CHOO-, M ions form a three-dimensional distorted perovskite-like structure dimethylamine (DMA) cations located cages of network. Based on magnetic data, these three 3D weak...

10.1021/ic0498081 article EN Inorganic Chemistry 2004-06-26

An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with purpose building a tunable photosensor responsivity more than 103 A W−1. It remarkable that rational utilization this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in single pristine graphene device. These results highlight vital importance modification as powerful tool for creating future ultrasensitive...

10.1002/adma.201104597 article EN Advanced Materials 2012-04-16

Solar‐blind deep ultraviolet (DUV) photodetectors have been a hot topic in recent years because of their wide commercial and military applications. A bandgap (4.68 eV) ternary oxide Zn 2 GeO 4 makes it an ideal material for the solar‐blind DUV detection. Unfortunately, sensing performance previously reported based on nanowires has unsatisfactory practical applications, they suffer from long response decay times, low responsivity, quantum efficiency. Here, high‐performance are developed...

10.1002/adfm.201504135 article EN Advanced Functional Materials 2015-12-18

We detailed a facile detection technique to optically characterize graphene growth and domains directly on substrates through simple thermal annealing process. It was found that transformed the naked Cu oxides while keeping graphene-covered intact. This increases interference color contrast between Cu, thus making easily visible under an optical microscope. By using this method, we studied factors affect nucleation achieved with domain size as large ~100 μm. The concept of chemically is...

10.1038/srep00707 article EN cc-by-nc-nd Scientific Reports 2012-10-04

Abstract Broadband photodetectors based on TiO 2 nanotubes (NTs) array have significant prospects in many fields such as environmental monitoring. Herein, a simple spin‐coating process is successfully adopted to incorporate MAPbI 3 quantum dots (QDs) onto the surface of NTs form heterostructure, extending response range NT from ultraviolet visible. Compared with pure NTs, heterostructure demonstrates an improvement responsivity visible by three orders magnitude, and maintains its performance...

10.1002/adfm.201703115 article EN Advanced Functional Materials 2017-09-27

Multielemental systems enable the use of multiple degrees freedom for control physical properties by means stoichiometric variation. This has attracted extremely high interest in field 2D optoelectronics recent years. Here, first time, multilayer ternary Ta 2 NiSe 5 flakes are successfully fabricated using a mechanical exfoliation method from chemical vapor transport synthesized quality bulk and optoelectronic systematically investigated. Importantly, responsivity 17.21 A W −1 external...

10.1002/adfm.201603804 article EN Advanced Functional Materials 2016-09-28

Abstract Due to the predicted excellent electronic properties superior group VIB (Mo and W) transition metal dichalcogenides (TMDs), IVB TMDs have enormous potential in nanoelectronics. Here, synthesis of ultrathin HfS 2 flakes via space‐confined chemical vapor deposition, realized by an inner quartz tube, is demonstrated. Moreover, effect key growth parameters including dimensions confined space deposition temperature on behavior products systematically studied. Typical as‐synthesized a...

10.1002/adfm.201702918 article EN Advanced Functional Materials 2017-08-15

Abstract Transition metal dichalcogenides (TMDs) consist of dozens ultrathin layered materials that have significantly different properties due to their varied phases, which determine the and application range TMDs. Interestingly, a controllable phase transition in TMDs is achieved extensively with use several methods. Thus, control promising way fully exploit potential This review introduces recent rapid development study TMD control, starting from basic conception strategies for obtaining...

10.1002/adfm.201802473 article EN Advanced Functional Materials 2018-08-16

Abstract Infrared light detection is generally limited by the intrinsic bandgap of semiconductors, which suppresses freedom in infrared photodetector design and hinders development high‐performance photodetector. In this work, for first time (1030 nm) photodetectors are fabricated based on WS 2 /MoS heterostructures. Individual MoS have no response to light. The origin comes from strong interlayer coupling shrinks energy interval heterojunction area thus rendering heterostructures longer...

10.1002/adfm.201800339 article EN Advanced Functional Materials 2018-04-06
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