A5112253085- Graphene research and applications
- Quantum and electron transport phenomena
- Topological Materials and Phenomena
- 2D Materials and Applications
- Surface and Thin Film Phenomena
- Quantum Mechanics and Non-Hermitian Physics
- Molecular Junctions and Nanostructures
- Fullerene Chemistry and Applications
- Gas Sensing Nanomaterials and Sensors
- Graph theory and applications
- Graphene and Nanomaterials Applications
- Diamond and Carbon-based Materials Research
- Boron and Carbon Nanomaterials Research
- Advanced Memory and Neural Computing
- Analytical Chemistry and Sensors
- Millimeter-Wave Propagation and Modeling
- Plasmonic and Surface Plasmon Research
- Iron-based superconductors research
- High Entropy Alloys Studies
- Terahertz technology and applications
- Fiber-reinforced polymer composites
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Thermoelectric Materials and Devices
- Metamaterials and Metasurfaces Applications
- Phase Equilibria and Thermodynamics
Henry Royce Institute
2016-2022
University of Manchester
2013-2022
Jiangsu University
2019-2022
Xiamen University
2019
Collaborative Innovation Center of Chemistry for Energy Materials
2019
Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2015
State Key Laboratory for Structural Chemistry of Unstable and Stable Species
2009-2012
Peking University
2009-2012
Beijing National Laboratory for Molecular Sciences
2009-2012
Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological originating from graphene's two valleys are predicted flow opposite directions and combine produce long-range charge neutral flow. We observed this effect as nonlocal voltage at zero narrow energy range near Dirac points distances large several micrometers away nominal current...
Many layered materials can be cleaved down to individual atomic planes, similar graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation potential applications. Here we introduce remedial approach based on cleavage, transfer, alignment, encapsulation air-sensitive crystals, all inside controlled inert atmosphere. To illustrate the technology, choose two archetypal two-dimensional...
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality heterostructures? Here we report on our search alternative substrates. The fabricated by encapsulating with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation layered...
Abstract Impurities produced during the synthesis process of a material pose detrimental impacts upon intrinsic properties and device performances as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been critical, unresolved issue, given graphene’s two-dimensionality. Here we report origins which primarily rooted chemical vapour deposition production at elevated temperatures, rather than transfer storage. In turn, demonstrate design Cu...
An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with purpose building a tunable photosensor responsivity more than 103 A W−1. It remarkable that rational utilization this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in single pristine graphene device. These results highlight vital importance modification as powerful tool for creating future ultrasensitive...
Cyclotron motion of charge carriers in metals and semiconductors leads to Landau quantization magneto-oscillatory behavior their properties. Cryogenic temperatures are usually required observe these oscillations. We show that graphene superlattices support a different type quantum oscillations do not rely on quantization. The extremely robust persist well above room temperature magnetic fields only few T. attribute this phenomenon repetitive changes the electronic structure such experience...
Abstract Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields as radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those allow fine control over the motion on atomic scale because of self-alignment mechanisms forces acting level. Such machines produce well-controlled movements a reaction to small changes external parameters. Here we demonstrate that, for system...
One of the intriguing characteristics honeycomb lattices is appearance a pseudomagnetic field as result mechanical deformation. In case graphene, Landau quantization resulting from this has been measured using scanning tunneling microscopy. Here we show that signature local sublattice symmetry breaking observable redistribution density states. This can be interpreted polarization graphene's pseudospin due to strain induced field, in analogy alignment real spin magnetic field. We reveal by...
It is well known that superconductivity in thin films generally suppressed with decreasing thickness. This suppression normally governed by either disorder-induced localization of Cooper pairs, weakening Coulomb screening, or generation and unbinding vortex-antivortex pairs as described the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example ultrathin superconductors has been found to remain superconducting down monolayer Here...
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap bilayer graphene. So far, these approaches suffer from edge disorder insufficiently controlled localization electrons. Here we realize an alternative strategy monolayer graphene, combining homogeneous magnetic field and confinement. Using the tip scanning...
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse incoming THz radiation, thanks thermoelectric and/or plasma wave rectification. Both effects similar functional dependences on gate voltage, and therefore, was difficult disentangle these contributions in previous...
In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with small lattice mismatch. We studied freely suspended membrane of well aligned graphene on hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) and scanning TEM (STEM). developed detection method in STEM is capable recording direction scattered beam...
We observe a series of sharp resonant features in the differential conductance graphene-hexagonal boron nitride-graphene tunnel transistors over wide range bias voltages between 10 and 200 mV. attribute them to electron tunneling assisted by emission phonons well-defined energy. The at which they occur are insensitive applied gate voltage hence independent carrier densities graphene electrodes, so plasmonic effects can be ruled out. phonon energies corresponding resonances compared with...
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas filled bands underneath contribute little to conduction. Here we describe a very different regime which carrier distribution graphene and its superlattices shifted so far from equilibrium that start playing an essential role, leading critical-current behavior. The criticalities develop upon velocity of electron flow reaching velocity. Key signatures out-of-equilibrium state...
Abstract Graphene behaves as a robust semimetal with the high electrical conductivity stemming from its high‐quality tight two‐dimensional crystallographic lattice. It is therefore promising electrode material. Here, general methodology for making stable photoresponsive field effect transistors, whose device geometries are comparable to traditional macroscopic semiconducting devices at nanometer scale, using cut graphene sheets 2D contacts detailed. These produced through oxidative cutting...
The next-nearest-neighbor hopping term ${t}^{\ensuremath{'}}$ determines a magnitude, and, hence, the importance of several phenomena in graphene that include self-doping due to broken bonds and Klein tunneling, which presence ${t}^{\ensuremath{'}}$, is no longer perfect. Theoretical estimates for vary widely, whereas few existing measurements by using polarization-resolved magnetospectroscopy have found surprisingly large close or even exceeding highest theoretical values. Here, we report...
Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities defects at interfaces. Here we present first systematic study of interfaces heterostructure using cross sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations comparing these to density functional theory (DFT)...
Bulk-boundary correspondence, connecting the bulk topology and edge states, is an essential principle of topological phases. However, conventional bulk-boundary correspondence broken down in general non-Hermitian systems. In this paper, we construct a one-dimensional Su-Schrieffer-Heeger model with periodic driving that exhibits skin effect: all eigenstates are localized at boundary systems, whether they states or zero $\ensuremath{\pi}$ modes. To capture properties, non-Bloch winding...