Servet Ozdemir

ORCID: 0009-0005-3271-1194
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Graphene research and applications
  • Topological Materials and Phenomena
  • Quantum and electron transport phenomena
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Thermal properties of materials
  • Perovskite Materials and Applications
  • Fiber-reinforced polymer composites
  • Phase-change materials and chalcogenides
  • Parallel Computing and Optimization Techniques
  • Thermal Radiation and Cooling Technologies
  • Diamond and Carbon-based Materials Research
  • Molecular Junctions and Nanostructures
  • Advancements in Battery Materials
  • Graphite, nuclear technology, radiation studies
  • Nanowire Synthesis and Applications
  • Quantum Dots Synthesis And Properties
  • Transition Metal Oxide Nanomaterials
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Condensed Matter Physics
  • Electronic and Structural Properties of Oxides
  • Fullerene Chemistry and Applications
  • Force Microscopy Techniques and Applications
  • Semiconductor materials and devices

Heriot-Watt University
2021-2024

National University of Singapore
2021

Centre of Excellence for Advanced Materials
2021

University of Manchester
2017-2020

Henry Royce Institute
2018-2019

University of Warwick
2016

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order which the are stacked defines electronic structure crystal, providing an exciting degree freedom can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity ferromagnetism. However, lack control sequence limits most research stable ABA form graphite. Here we...

10.1021/acs.nanolett.9b03014 article EN Nano Letters 2019-10-30

The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically promising technologically, this process is unattainable ambient environment, because quickly oxidises at high temperatures. Here, we take the performance graphene-based incandescent devices next level by encapsulating with hexagonal boron nitride (hBN). Remarkably, found that hBN...

10.1088/2053-1583/aa97b5 article EN cc-by 2D Materials 2017-11-02

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties functionalities resulted structures. Thus, planar heterostructures allow p-n junctions between different semiconductors graphene nanoribbons with well-defined edges; in observation superconductivity purely carbon-based systems realisation tunnelling transistors. Here we demonstrate simultaneous use...

10.1038/s41467-018-08227-1 article EN cc-by Nature Communications 2019-01-10

Resistance drift of the amorphous states multilevel phase change memory (PCM) cells is currently a great challenge for commercial implementation reliable multiple-bit-per-cell technology. This paper reports observation stable intermediate state PCM cell that achieved through nonuniform heating with square current injection top electrode. Drift coefficient an order magnitude lower than reset and has weaker temperature dependence. Using finite-element simulations analytical model subthreshold...

10.1109/ted.2016.2574498 article EN IEEE Transactions on Electron Devices 2016-06-23

{\alpha}-RuCl$_3$, a narrow-band Mott insulator with large work function, offers intriguing potential as quantum material or charge acceptor for electrical contacts in van der Waals devices. In this work, we perform systematic study of the optical reflection contrast {\alpha}-RuCl$_3$ nanoflakes on oxidized silicon wafers and estimate accuracy imaging technique to assess crystal thickness. Via spectroscopic micro-ellipsometry measurements, characterize wavelength-dependent complex refractive...

10.1063/5.0212132 preprint EN arXiv (Cornell University) 2024-05-09

α-RuCl3, a narrow-band Mott insulator with large work function, offers intriguing potential as quantum material or charge acceptor for electrical contacts in van der Waals devices. In this work, we perform systematic study of the optical reflection contrast α-RuCl3 nanoflakes on oxidized silicon wafers and estimate accuracy imaging technique to assess crystal thickness. Via spectroscopic micro-ellipsometry measurements, characterize wavelength-dependent complex refractive index varying...

10.1063/5.0212132 article EN cc-by APL Materials 2024-07-01
Coming Soon ...