A5001671363- Graphene research and applications
- Quantum and electron transport phenomena
- Supercapacitor Materials and Fabrication
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Graphene and Nanomaterials Applications
- Advanced Sensor and Energy Harvesting Materials
- Topological Materials and Phenomena
- Diamond and Carbon-based Materials Research
- Advancements in Battery Materials
- Quantum-Dot Cellular Automata
- Advancements in Semiconductor Devices and Circuit Design
- 2D Materials and Applications
Peking University
2017-2020
Abstract Impurities produced during the synthesis process of a material pose detrimental impacts upon intrinsic properties and device performances as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been critical, unresolved issue, given graphene’s two-dimensionality. Here we report origins which primarily rooted chemical vapour deposition production at elevated temperatures, rather than transfer storage. In turn, demonstrate design Cu...
Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However introduction scattering centers limits this technique because reduced carrier mobilities conductivities resulting material. Here, we demonstrate a rapid graphitic nitrogen cluster-doped monolayer single crystals on Cu foil remarkable mobility 13,000 cm2 V-1 s-1 greatly sheet...
Abstract Future applications of graphene rely highly on the production large‐area high‐quality graphene, especially large single‐crystalline due to reduction defects caused by grain boundaries. However, current growing methodologies are suffering from low growth rate and as a result, industrial is always confronted high energy consumption, which primarily temperature long time. Herein, new condition achieved via ethane being carbon feedstock achieve low‐temperature yet rapid reported. Ethane...
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due the absence lattice defects through direct substitution carbon atoms nitrogen atoms. In this work, we report on electrical and magnetotransport measurements high-quality graphitic graphene. We show that substitutional dopants introduce atomically sharp scatters for electrons but long-range Coulomb holes and,...
Contamination is a major concern in surface and interface technologies. Given that graphene 2D monolayer material with an extremely large area, contamination may seriously degrade its intrinsic properties strongly hinder applicability interfacial regions. However, large-scale facile treatment methods for producing clean films preserve excellent have not yet been achieved. Herein, efficient postgrowth method selectively removing to achieve large-area superclean reported. The as-obtained...
In article 1702916, Hailin Peng, Zhongfan Liu, and co-workers demonstrate low-temperature, rapid growth of graphene using ethane as a carbon feedstock. The authors achieve both higher rate larger domain size in comparison to the methane method. This study brings new insights into effect feedstock on growth, reducing energy consumption for massive synthesis graphene, promoting further investigation optimize condition.
We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition fabricated by contacting piece two closely spaced Al electrodes an Al-tBLG-Al configuration. Low-temperature measurements show that below critical temperature ($T_c\approx1.1$ K), exhibits sizable supercurrents at zero magnetic field, arising from superconducting proximity effect...
A new approach to clean the surface of graphene is reported by Hailin Peng, Zhongfan Liu, and co-workers in article number 1902978, who use a force-engineered “lint roller” selectively removing graphene's intrinsic contaminants. The as-obtained super-clean can be transferred dielectric substrates with significantly reduced polymer residues, it exhibits superior electronic optical properties such as ultrahigh carrier mobility low contact resistance.