A5081260572- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Copper Interconnects and Reliability
- stochastic dynamics and bifurcation
- Metal and Thin Film Mechanics
- Advancements in Photolithography Techniques
- Semiconductor Lasers and Optical Devices
- Surface Roughness and Optical Measurements
- Silicon Nanostructures and Photoluminescence
- Neural Networks and Applications
- Neural dynamics and brain function
- Advanced Data Processing Techniques
- Transition Metal Oxide Nanomaterials
- Optical Coatings and Gratings
- Mechanical and Optical Resonators
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Material Properties and Applications
- Advanced Research in Systems and Signal Processing
- Plasma Diagnostics and Applications
- Advanced MEMS and NEMS Technologies
Research Institute of Molecular Electronics
2005-2023
Electronics Research Institute
2021-2022
Moscow Institute of Physics and Technology
2014-2022
Moscow Power Engineering Institute
2021-2022
Mikron (Russia)
2002-2005
Polymer grafting was studied in porous low-k SiCOH films as a protection against plasma damage. Pores of were covered by damage management polymer. A multistep deposition approach applied to increase the polymer layer thickness that helped avoid pore stuffing, nonuniform and overburden. To study protection, exposed F radicals VUV photons, separately simultaneously, at temperatures from −45 °C +10 °C. Effective room demonstrated. Lowering temperature decreases degradation while damage, which...
Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes option of memristor models. The common approach is use compact models, accuracy often determined by their parameter extraction from experiment results. In this paper, a review existing methods was performed new algorithms an adaptive model were proposed. effectiveness developed confirmed volt-ampere characteristic with vertical...
We have developed the new technology for production of sensitive modules electrochemical sensors pressure and acceleration. The is applicable mass scalable high-volume production. In this work we demonstrate sensing module motion sensors, its possibility applying in geophones. fabricated prototypes planar transducer chips, produced a laboratory prototype geophone based on our chip, tested them. This paper presents preliminary results tests.
Planar electrochemical systems are very perspective to build modern motion and pressure sensors. microelectronic technology is successfully used for transducer of parameters. These characterized by an exceptionally high sensitivity towards mechanic exposure due rate conversion the signal electric current. In this work, we have developed a mathematical model planar system, which detects mechanical signals. We simulate processes mass charge transfer in calculated its function with different...
The aim of the work was to study effect various microelectronic structural and technological implementations improve field emission properties nano-carbon emitters. vacuum diodes with nanodiamond-graphite emitters different geometric shapes researched. layers deposition were carried out from ethanol vapor at low pressure using microwave plasma. Three series experiments studied. Researching currents flat cathodes on silicon wafer coated by layer done in first experiments. In second...
The use of low-dimensional materials is a promising approach to improve the key characteristics memristors. development process includes modeling, but question most common compact model applicability modeling device with inclusion remains open. In this paper, comparative analysis linear and nonlinear drift as well threshold models was conducted. For purpose, assumption relationship between results optimization volt–ampere characteristic loop descriptive ability used. A global random search...
The processes of plasma etching stack layers to form a structure metal gate nanoscale transistor with dielectric high level permittivity (HkMG) are investigated. A resist mask formed by fine-resolution electron-beam lithography is used in the etching. stack’s carried out one technological cycle without vacuum break. sequential anisotropic process polysilicon, tantalum nitride, and hafnium as well insulator based on oxide degree selectivity relation underlying crystalline silicon, which...
В статье проведено исследование времени хранения заряда в мемристоре на основе SiN. Определены профиль распределения ловушек запрещенной зоне SiN, их энергия и концентрация.
Abstract The losses in optical components are the key obstacle development of photonic integrated circuits (PIC). This makes developers to include additional signal gain elements into scheme. One major and optimizable factors loss is sidewall roughness components. After analysis causing line-edge (LER), we developed basic model emerging process during forming photolithography nanostructures. We proposed an approach optimize order minimize fabricated structures. software complex on basis this...