Kasper A. Hunnestad

ORCID: 0000-0003-1732-3634
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Research Areas
  • Electronic and Structural Properties of Oxides
  • Advanced Materials Characterization Techniques
  • Acoustic Wave Resonator Technologies
  • Ferroelectric and Piezoelectric Materials
  • Advanced Surface Polishing Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Diamond and Carbon-based Materials Research
  • Multiferroics and related materials
  • Advanced Measurement and Metrology Techniques
  • Magnetic and transport properties of perovskites and related materials
  • Non-Destructive Testing Techniques
  • Force Microscopy Techniques and Applications
  • Geophysical and Geoelectrical Methods
  • Solid-state spectroscopy and crystallography
  • Photorefractive and Nonlinear Optics
  • Geophysical Methods and Applications
  • CO2 Sequestration and Geologic Interactions
  • Semiconductor materials and devices
  • Dielectric materials and actuators
  • Magnetic Field Sensors Techniques
  • Hydrogen embrittlement and corrosion behaviors in metals
  • Silicon and Solar Cell Technologies
  • Electron and X-Ray Spectroscopy Techniques
  • Minerals Flotation and Separation Techniques
  • Advancements in Photolithography Techniques

Norwegian University of Science and Technology
2020-2024

Institute for Forecasting of the Slovak Academy of Sciences
2024

Ferroelectric domain walls are a completely new type of functional interface, which have the potential to revolutionize nanotechnology. In addition emergent phenomena at walls, they spatially mobile and can be injected, positioned, deleted on demand, giving degree flexibility that is not available conventional interfaces. Progress in field closely linked development modern microscopy methods, essential for studying their physical properties nanoscale. this article, we discuss scanning...

10.1063/5.0029284 article EN cc-by Journal of Applied Physics 2020-11-17

Ferroelectrics have become indispensable in the development of energy-efficient oxide electronics. Their domain state is closely linked to final device functionality, making engineering technology-compatible thin films paramount importance. Here we demonstrate local control formation two-dimensional epitaxial ferroelectric using structural defect through substrate topography. Using a combination first-principles calculations, atom probe tomography, and scanning microscopy, show that...

10.1021/acs.chemmater.2c01178 article EN Chemistry of Materials 2022-07-14

Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning functional properties ferroelectrics various applications, ranging from capacitors to future nanoelectronics. Here, we investigate formation in poly- single-crystalline improper hexagonal DyMnO3. We show that a non-uniform grain-size distribution polycrystal facilitates coexistence multi-scale domains, varying by up one order magnitude size. This unusual structure...

10.1016/j.matt.2024.04.041 article EN cc-by-nc Matter 2024-05-21

Abstract Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order (PbTiO 3 ) n /(SrTiO superlattices. Although it is clear that variations oxygen content crucial for the electronic correlation phenomena oxides, remains major challenge to quantify their impact. Here, we measure chemical composition multiferroic (LuFeO 9 /(LuFe 2 O 4 1 superlattices, mapping correlations between...

10.1038/s41467-024-49437-0 article EN cc-by Nature Communications 2024-06-26

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries the pairing of hydrogen production carbon capture. Recently, layered emerged highly tunable semiconductors. For example, by introducing anti-Frenkel defects, electronic hopping conductance in hexagonal manganites was increased locally orders magnitude. Here, we demonstrate local acceptor donor doping Er(Mn,Ti)O$_3$, facilitated splitting such defects under...

10.48550/arxiv.2502.07947 preprint EN arXiv (Cornell University) 2025-02-11

Abstract Application of scanning probe microscopy techniques such as piezoresponse force (PFM) opens the possibility to re‐visit ferroelectrics previously studied by macroscopic electrical testing methods and establish a link between their local nanoscale characteristics integral response. The PFM studies phase field modeling static dynamic behavior domain structure in well‐known ferroelectric material lead germanate, Pb 5 Ge 3 O 11 , are reported. Several unusual phenomena revealed: 1)...

10.1002/adfm.202000284 article EN Advanced Functional Materials 2020-03-18

Polar discontinuities, as well compositional and structural changes at oxide interfaces can give rise to a large variety of electronic ionic phenomena. In contrast earlier work focused on domain walls epitaxial systems, this investigates the relation between polar discontinuities local chemistry grain boundaries in polycrystalline ferroelectric ErMnO3 . Using orientation mapping scanning probe microscopy (SPM) techniques, material is demonstrated develop charged with enhanced conductance. By...

10.1002/adma.202302543 article EN cc-by Advanced Materials 2023-07-15

Abstract Direct electron detectors in scanning transmission microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, example, emergent chiral structures symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by subtleties of dynamic diffraction coexisting contrast mechanisms, which...

10.1038/s41524-024-01265-y article EN cc-by npj Computational Materials 2024-05-18

Abstract The physical properties of semiconductors are controlled by chemical doping. In oxide semiconductors, small variations in the density dopant atoms can completely change local electric and magnetic responses caused their strongly correlated electrons. lightly doped systems, however, such difficult to determine as quantitative 3D imaging individual is a major challenge. We apply atom probe tomography resolve atomic sites that donors occupy band gap semiconductor Er(Mn,Ti)O 3 with...

10.1038/s41467-022-32189-0 article EN cc-by Nature Communications 2022-08-15

Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. There an increasing interest in the application of APT to complex oxides materials, giving new insight into relation between local variations composition emergent physical properties. However, contrast field metallurgy, where routinely applied study materials at atomic level, their specific evaporation mechanisms are much less explored. Here, we...

10.1016/j.matchar.2023.113085 article EN cc-by Materials Characterization 2023-06-10

Precession electron diffraction has in the past few decades become a powerful technique for structure solving, strain analysis, and orientation mapping, to name few. One of benefits precessing beam, is increased reciprocal space resolution, albeit at loss spatial resolution due an effect referred as 'probe wandering'. Here, new methodology precession path segmentation presented counteract this increase reconstructed virtual images from scanning data. By utilizing fast pixelated detector...

10.1016/j.ultramic.2023.113715 article EN cc-by Ultramicroscopy 2023-03-08

Atom probe tomography (APT) is a powerful three-dimensional nanoanalyzing microscopy technique considered key in modern materials science. However, progress the spatial reconstruction of APT data has been rather limited since first implementation protocol proposed by Bas et al. 1995. This paper proposes simple semianalytical approach to reconstruct multilayered structures, i.e., two or more different compounds stacked perpendicular analysis direction. Using field evaporation model, general...

10.1093/micmic/ozad054 article EN cc-by Microscopy and Microanalysis 2023-05-16

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations oxygen content crucial for the electronic correlation phenomena oxides, remains major challenge to quantify their impact. Here, we measure chemical composition multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing...

10.48550/arxiv.2307.00139 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning functional properties ferroelectrics various applications, ranging from capacitors to future nanoelectronics. Here, we investigate formation in poly- single crystalline improper DyMnO3. We show that a non-uniform grain-size distribution polycrystals facilitates coexistence multi-scale domains, varying by up one order magnitude size. This unusual structure originates an...

10.48550/arxiv.2401.04654 preprint EN cc-by arXiv (Cornell University) 2024-01-01

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies show that the configuration ferroelectric can go well beyond conventional Ising-type structure. Néel-, Bloch-, vortex-like patterns have been observed, displaying strong similarities with spin textures at magnetic walls. Here, discovery antiferroelectric in uniaxial Pb

10.1002/adma.202405150 article EN cc-by Advanced Materials 2024-08-09

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where unusual electronic properties quasi-2D nature are leveraged to emulate behavior components at ultra-small length scales. Here, we demonstrate atmosphere-related reversible changes conduction neutral domain Er(Mn,Ti)O$_3$. By exposing system reducing oxidizing conditions, drive from insulating conducting,...

10.48550/arxiv.2412.03691 preprint EN arXiv (Cornell University) 2024-12-04

Direct electron detectors in scanning transmission microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, example, emergent chiral structures symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by subtleties of dynamic diffraction coexisting contrast mechanisms, which often...

10.48550/arxiv.2305.05727 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration ferroelectric can go well beyond conventional Ising-type structure. N\'eel-, Bloch-, vortex-like patterns have been observed, displaying strong similarities with spin textures at magnetic walls. Here, we report discovery antiferroelectric in uniaxial Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile an alternating displacement Pb atoms,...

10.48550/arxiv.2309.02068 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls superlattices. Here, we investigate the relation between polar local chemistry grain boundaries polycrystalline ErMnO3. Using orientation mapping different scanning probe microscopy techniques, demonstrate that material develops charged with enhanced...

10.48550/arxiv.2212.07924 preprint EN cc-by arXiv (Cornell University) 2022-01-01
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