A5100462324- Graphene research and applications
- 2D Materials and Applications
- Quantum and electron transport phenomena
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Infrared Target Detection Methodologies
- Reproductive Biology and Fertility
- Fusion materials and technologies
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Luminescence and Fluorescent Materials
- Molecular Junctions and Nanostructures
- Carbon Nanotubes in Composites
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Advancements in Battery Materials
- Nanoplatforms for cancer theranostics
- Ovarian function and disorders
- Graphene and Nanomaterials Applications
- Diamond and Carbon-based Materials Research
- Gas Sensing Nanomaterials and Sensors
- Crystal Structures and Properties
- Glass properties and applications
Institute of Atomic and Molecular Sciences, Academia Sinica
2015-2025
National University of Defense Technology
2012-2025
Wuhan University
2023-2025
Academia Sinica
2011-2024
China Coal Research Institute (China)
2024
Northwestern Polytechnical University
2024
AviChina Industry & Technology (China)
2024
Anhui University
2023-2024
Institute of Plasma Physics
2024
Qiqihar University
2023
In search of high-performance field-effect transistors (FETs) made atomic thin semiconductors, indium selenide (InSe) has held great promise because its high intrinsic mobility and moderate electronic band gap (1.26 eV). Yet the performance InSe FETs is decisively determined by surface oxidation taking place spontaneously in ambient conditions, setting up a ceiling causing an uncontrollable current hysteresis. Encapsulation hexagonal boron nitride (h-BN) been currently used to cope with this...
Edge contacts offer a significant advantage for enhancing the performance of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing with metallic on lateral side, which allows encapsulation all channel material. However, despite intense research, fabrication feasible electrical edge to TMDCs improve device remains great challenge, as interfacial chemical characterization via conventional methods is lacking. A major bottleneck in explicitly understanding and electronic...
Spin accumulation and spin precession in single-layer graphene are studied by non-local valve measurements at room temperature. The dependence of the magnetoresistance on electrode spacing is investigated results indicate a diffusion length ~1.6 microns injection/detection efficiency 0.013. Electrical detection confirms that signal originates from injection transport. Fitting Hanle data yields relaxation time ~84 ps ~1.5 microns, which consistent with value obtained through dependence.
Spin-dependent properties of single-layer graphene (SLG) have been studied by nonlocal spin valve measurements at room temperature. Gate voltage dependence shows that the magnetoresistance (MR) is proportional to conductivity SLG, which predicted behavior for transparent ferromagnetic-nonmagnetic contacts. While electron and hole bands in SLG are symmetric, gate bias MR reveal an electron-hole asymmetry roughly independent electrons, but varies significantly with holes.
Recent discoveries of the photoresponse molybdenum disulfide (MoS2) have shown considerable potential these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among various types photoresponses MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study PPC effect and its mechanism in MoS2 is still not available, despite importance this on material. Here, we present systematic monolayer conclude that can be...
An essential issue in graphene nanoelectronics is to engineer the carrier type and density still preserve unique band structure of graphene. We report realization high-quality p−n junctions by noncovalent chemical functionalization. A generic scheme for junction fabrication established combining resist-free approach spatially selective modification process. The effectiveness functionalization systematically confirmed surface topography potential measurements, resolved Raman spectroscopic...
Abstract Highly ordered large‐area arrays of wurtzite CdS nanowires are synthesized on Cd‐foil substrates via a simple liquid reaction route using thiosemicarbazide and Cd foil as the starting materials. The single crystals growing along [001] direction perpendicular to surface substrate. characteristic Raman peaks red‐shifted show asymmetric broadening, which is ascribed phonon confinement effects arising from nanoscale dimensions nanowires. Significantly, uniform nanowire can act laser...
We report the magnetoresistance (MR) properties of quasi-two-dimensional mesoscopic graphite (MG) spin valve devices consisting MG flakes contacted by ferromagnetic (FM) electrodes. For in which an ultrathin magnesium oxide $(\mathrm{MgO})$ tunnel barrier is inserted at FM/MG interface, effect has been observed, with MR magnitudes up to 12% $7\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and signals persisting temperatures as high $60\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. In contrast, not seen...
This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated layers of titanium suboxide (TiOx) thin films, which are amorphous phase crystalline TiO2 and can be solution processed. The nonstoichiometry TiOx films consisting a large number oxygen vacancies exhibit several unique functions simultaneously in the as efficient electron-donating agent, effective dielectric screening medium, also...
Visible blind near-infrared (NIR) photodetection is essential when it comes to weapons used by military personnel, narrow band detectors in space navigation systems, medicine, and research studies. The technological field of filterless visible blind, NIR omnidirectional wearability at a preliminary stage. Here, we present lightweight design for wearable photodetector capable harvesting light omnidirectionally. comprises the integration distinct features lanthanide-doped upconversion...
Numerous investigations of photon upconversion in lanthanide-doped nanoparticles (UCNPs) have led to its application the fields bioimaging, biodetection, cancer therapy, displays, and energy conversion. Herein, we demonstrate a new approach toward UCNPs graphene hybrid planar rippled structure photodetector. The multi-energy sublevels from 4fn electronic configuration lanthanides results longer excited state lifetime for photogenerated charge carriers. This opens up regime...
Infrared small target detection occupies an important position in the infrared search and track system. The most common size of images has developed to 640×512. field-of-view (FOV) also increases significantly. As result, there is more interference that hinders targets image. However, traditional model-driven methods do not have capability feature learning, resulting poor adaptability various scenes. Owing locality convolution kernels, recent convolutional neural networks (CNN) cannot model...
In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices OTS SAM-functionalized high carrier mobility, low intrinsic doping, suppressed scattering, reduced thermal activation resistivity at room temperature were observed. Most interestingly, remarkable pronounced quantum Hall effect, strong...
This work presents an ultrahigh gain InSe-based photodetector by using a novel approach called the surface oxidation doping (SOD) technique. The carrier concentration of multilayered two-dimensional (2D) InSe semiconductor has been modulated controlling formation oxide layer. SOD through charge transfer at interface oxide/2D heterostructure can lead to creation vertical built-in potential and band bending as result distribution gradient. internal electric field caused gradient in layers...
Abstract Chemo‐phototherapy has emerged as a promising approach to complement traditional cancer treatment and enhance therapeutic effects. However, it still faces the challenges of drug efflux transporter‐mediated chemoresistance heat shock proteins (HSPs)‐mediated phototherapy tolerance, which both depend on an excessive supply adenosine triphosphate. Therefore, manipulating energy metabolism impair expression or function P‐glycoprotein (P‐gp) HSPs may be prospective strategy reverse...
The electrical contact to two-dimensional (2D) semiconductor materials is decisive the electronic performance of 2D field-effect devices (FEDs). presence a Schottky barrier often leads large resistance, which seriously limits channel conductance and carrier mobility measured in two-terminal geometry. In contrast, Ohmic desirable can be achieved by nonrectifying or tunneling barrier. Here, we demonstrate that realized contacting indium (In), low work function metal, with layered InSe because...
Abstract Atomically thin indium selenide (InSe) exhibits a sombrero-like valence band, leading to distinctive excitonic behaviors. It is known that the indirect band gap of atomically InSe leads weak emission from lowest-energy state (A peak). However, A peak monolayer (ML) was observed be either absent or very weak, rendering nature its states largely unknown. Intriguingly, we demonstrate ML pronounced PL because efficient brightening momentum-indirect dark excitons. The mechanism...