A5026304916- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Particle physics theoretical and experimental studies
- Photonic and Optical Devices
- 3D IC and TSV technologies
- Quantum Chromodynamics and Particle Interactions
- Neutrino Physics Research
- Microwave Engineering and Waveguides
- Semiconductor materials and interfaces
- Dark Matter and Cosmic Phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Astrophysics and Cosmic Phenomena
- Advancements in PLL and VCO Technologies
- Advanced Power Amplifier Design
- Analog and Mixed-Signal Circuit Design
- Particle Detector Development and Performance
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Viral gastroenteritis research and epidemiology
- Molecular Junctions and Nanostructures
- Synthesis and biological activity
- Advanced Image and Video Retrieval Techniques
- Viral Infections and Immunology Research
GlobalFoundries (United States)
2015-2024
Eindhoven University of Technology
2023-2024
University at Albany, State University of New York
2007-2024
Teerthanker Mahaveer University
2019-2024
Delhi Technological University
2023
GlobalFoundries (Germany)
2020-2022
Heritage Malta
2022
GlobalFoundries (Cayman Islands)
2016-2018
Amity University
2018
Gautam Buddha University
2016
This paper presents an empirical analysis of theperformance popular convolutional neural networks (CNNs) for identifying objects in real time video feeds. The most convolution object detection and category classification from images are Alex Nets, GoogLeNet, ResNet50. A variety image data sets available to test the performance different types CNN’s. commonly found benchmark datasets evaluating a network anImageNet dataset, CIFAR10, CIFAR100, MNIST sets. study focuses on analyzing three...
We report on the development of a 0.25-μm InP HBT IC technology for lower end THz frequency band (0.3-3 THz). Transistors demonstrate an extrapolated f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> >;800 GHz while maintaining common-emitter breakdown voltage (BVCEO) >;4 V. The transistors have been integrated in full process that includes three-levels interconnects, and backside processing. has utilized key circuit building blocks...
The authors report results from a 130 nm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. A 0.13 × 2 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibits current gain cutoff frequency <i xmlns:xlink="http://www.w3.org/1999/xlink">ft</i> >;520 GHz, with simultaneous extrapolated power xmlns:xlink="http://www.w3.org/1999/xlink">fmax</i> 1.1 THz. HBTs exhibit these RF figures-of-merit while...
We present the electrical characteristics of first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The features 300 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and 360 xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> high performance HBTs, 135 2.5V BV xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> medium breakdown Low Power RF CMOS, a full suite passive devices. A...
Recent improvements in the fabrication technology of InGaAs/InP heterobipolar transistors have enabled highly scaled with power gain bandwidths above 1 THz. Limitations conventional process that reduce RF bandwidth been identified and mitigated, among which are high resistivity base ohmic contacts, resistive electrodes, excessive emitter end undercut, insufficient undercut large-diameter posts. A novel two-step deposition for self-aligned metallization sub-20-nm bases has developed...
The authors report ultralow specific contact resistivity (ρc) in nonalloyed, situ Ohmic contacts to heavily doped n-type In0.53Ga0.47As:Si layers with 6×1019cm−3 active carrier concentration, lattice matched InP. were formed by depositing molybdenum (Mo) immediately after the In0.53Ga0.47As growth without breaking vacuum. Transmission line model measurements showed a of (1.1±0.6)×10−8Ωcm2 for Mo∕InGaAs interface. show no observable degradation annealing at 300 and 400°C 1min duration.
We report fundamental fixed-frequency and voltage-controlled oscillators operating at >300 GHz fabricated in a 256 nm InP DHBT technology. Oscillator designs are based on differential series-tuned topology followed by common-base buffer. Measured oscillation frequencies of 267.4, 286.8, 310.2, 346.2 GHz, P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DC</sub> = 35 mW. At optimum bias, the output power was measured to be -5.1, -6.9, -9.2,...
The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory University California, Davis. Transient on two-photon absorption system Naval Research Laboratory. Results show that HBTs dose-tolerant up to 3 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) exhibit reduced...
The authors report ultralow specific contact resistivity (ρc) in ex situ Ohmic contacts to n-type In0.53Ga0.47As (100) layers, with an electron concentration of 5×1019 cm−3. They present the ρc obtained for molybdenum (Mo) In0.53Ga0.47As, semiconductor surface cleaned by atomic H before metal deposition. compare these data made without cleaning. After exposure air during normal device processing, was prepared UV-ozone plus a dilute HCl etch and subsequently exposed thermally cracked H. Mo...
Critical analog electronic circuits for a possible 80-GHz bandwidth, frequency-interleaved, PAM-4 or discrete-multitone (DMT) linear fiber-optic front-end are implemented in 90-nm SiGe BiCMOS technology. These include novel vertically coupled, 40-100-GHz bandpass filter, an bandwidth distributed optical modulator driver with measured output compression point of 13 dBm per side, corresponding to 7 V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Introduction. The objectives of this survey were to assess the seroprevalence antibodies poliovirus types 1 and 3 impact bivalent (types 3) oral vaccine (bOPV) use in immunization campaigns northern India.
Background. Moradabad district in Uttar Pradesh reported the highest number of paralytic polio cases India during 2001–2007. We conducted a study 2007 to assess seroprevalence against poliovirus types 1, 2, and 3 children 6–12 36–59 months age guide future strategies interrupt wild transmission high-risk areas.
Over the last few decades, SiGe BiCMOS has survived continued onslaught of RF-CMOS technologies. HBT invented in late 1980's and later introduced as a technology served sweet spot emerging RF market, thanks to HBT's higher power better noise characteristics. It did not take very long for RFCMOS scaling roadmap catch up performance levels displace it from high-volume market segment like cellular transceivers. Now with advent 5G millimeter-wave (mmWave) applications demanding lower front-end,...
Important performance metrics, such as sensitivity and signal to noise ratio (SNR) of bipolar transistor based biosensors, are compared those for nanowire field effect (FET) sensors. The sensor consists a heterojunction (HBT) with silicon germanium base connected sensing surface in contact the solution. measured is ≥2 times SNR &gt;20 higher comparison FET More importantly, HBT biosensor constant over range ∼5 decades depends only on temperature. In comparison, varies complex manner...
We report 220 nm InP double heterojunction bipolar transistors (DHBTs) demonstrating f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">τ</inf> = 480 GHz and xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> 1.0 THz. Improvements in the emitter base processes have made it possible to achieve a THz even at wide emitter-base junction with 1.1 µm base-collector mesa. A vertical metal etch profile, wet-etched thin semiconductor less than 10...
We present the effect of active carrier concentration on specific contact resistivity (ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although Fermi level pins in conduction band for InAs, decreases with increase InAs concentration. The lowest ρ obtained through transmission line model measurements was (0.6±0.4)×10 <sup...
Abstract-We report an InPZIn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f xmlns:xlink="http://www.w3.org/1999/xlink">τ</sub> and 800-GHz xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> . The devices were fabricated using a triple mesa process with dry-etched refractory metals for...
High Performance (HP) SiGe HBTs integrated in a 45nm PDSOI BiCMOS process with peak $f_{T}/f_{MAX}415/610$ GHz are reported here. These the highest f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> silicon devices demonstrated any SOI platform. Measured $f_{T}/f_{MAX}$ at transmission line metal level for this HBT is 388/600GHz which gives significant performance benefit over CMOS RF circuit designs. hybrid region on wafer formed by...
We report on the recent addition of an improved high performance (HP) NPN HBT to GF's 90nm BiCMOS SiGe 9HP technology. The HP with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> 340/410 GHz and medium breakdown (MB) /BV xmlns:xlink="http://www.w3.org/1999/xlink">CBO</inf> 150 / 8.4 V have been developed as new feature options within As improvements are made without altering...