- Concrete and Cement Materials Research
- Radio Frequency Integrated Circuit Design
- Photonic and Optical Devices
- Innovative concrete reinforcement materials
- Building materials and conservation
- Optical Coatings and Gratings
- Energy Harvesting in Wireless Networks
- Photonic Crystals and Applications
- Energy Efficient Wireless Sensor Networks
- Advanced Photonic Communication Systems
- Innovations in Concrete and Construction Materials
- Recycled Aggregate Concrete Performance
- Geotechnical and construction materials studies
- Advancements in PLL and VCO Technologies
- Recycling and utilization of industrial and municipal waste in materials production
- Mining and Gasification Technologies
- Fire Detection and Safety Systems
- Flow Measurement and Analysis
- Tunneling and Rock Mechanics
- Rock Mechanics and Modeling
- Materials Engineering and Processing
- Semiconductor Lasers and Optical Devices
- Magnesium Oxide Properties and Applications
- Advanced Power Amplifier Design
Global Hospitals
2022-2023
Manipal University Jaipur
2021
National Institute of Advanced Manufacturing Technology
2019
High Performance (HP) SiGe HBTs integrated in a 45nm PDSOI BiCMOS process with peak $f_{T}/f_{MAX}415/610$ GHz are reported here. These the highest f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> silicon devices demonstrated any SOI platform. Measured $f_{T}/f_{MAX}$ at transmission line metal level for this HBT is 388/600GHz which gives significant performance benefit over CMOS RF circuit designs. hybrid region on wafer formed by...
In this paper we discuss the latest developments in GlobalFoundries Fotonix™ program, including enhancements device performance, packaging, PDK compact models, and in-house test capabilities.
This paper reviews recent advancements in GlobalFoundries (GF) Fotonix TM technology: a 300-mm monolithic CMOS silicon photonics (SiPh) foundry platform. The discussion encompasses photonic and device libraries, advanced packaging, PDK compact models, reliability, system-level demonstrations.
In this invited paper, measured results of four different analog/mmWave circuits with excellent figures-of-merit (FoM) are demonstrated in SiGe technologies. First, a low noise amplifier (LNA) very high gain 19.1 dB and NF 1.3 at 19 GHz for SATCOM is demonstrated. A mmWave cascode power cell having an Psat 17 dBm 45% PAE 47 shown. npn ring oscillator (RO) delay 2.59 ps using tail current 3.57 mA Finally, performance transimpedance amplifiers (TIA) compared across two Technologies...
Series-peaking inductor is a crucial block in shunt-feedback Transimpedance amplifier (TIA) used for bandwidth enhancement. Achieving high-quality factor (Q) and high self-resonant frequency (SRF) of on-chip inductors challenging large TIAs. A higher <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_T$</tex> heterojunction bipolar transistor (HBT) can relax the requirement series-peaking inductance. Due to lower inductance value,...