Prateek Kumar Sharma

ORCID: 0000-0002-2123-985X
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About
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Research Areas
  • Concrete and Cement Materials Research
  • Radio Frequency Integrated Circuit Design
  • Photonic and Optical Devices
  • Innovative concrete reinforcement materials
  • Building materials and conservation
  • Optical Coatings and Gratings
  • Energy Harvesting in Wireless Networks
  • Photonic Crystals and Applications
  • Energy Efficient Wireless Sensor Networks
  • Advanced Photonic Communication Systems
  • Innovations in Concrete and Construction Materials
  • Recycled Aggregate Concrete Performance
  • Geotechnical and construction materials studies
  • Advancements in PLL and VCO Technologies
  • Recycling and utilization of industrial and municipal waste in materials production
  • Mining and Gasification Technologies
  • Fire Detection and Safety Systems
  • Flow Measurement and Analysis
  • Tunneling and Rock Mechanics
  • Rock Mechanics and Modeling
  • Materials Engineering and Processing
  • Semiconductor Lasers and Optical Devices
  • Magnesium Oxide Properties and Applications
  • Advanced Power Amplifier Design

Global Hospitals
2022-2023

Manipal University Jaipur
2021

National Institute of Advanced Manufacturing Technology
2019

High Performance (HP) SiGe HBTs integrated in a 45nm PDSOI BiCMOS process with peak $f_{T}/f_{MAX}415/610$ GHz are reported here. These the highest f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> silicon devices demonstrated any SOI platform. Measured $f_{T}/f_{MAX}$ at transmission line metal level for this HBT is 388/600GHz which gives significant performance benefit over CMOS RF circuit designs. hybrid region on wafer formed by...

10.1109/iedm45625.2022.10019417 article EN 2022 International Electron Devices Meeting (IEDM) 2022-12-03

10.1166/asem.2019.2311 article EN Advanced Science Engineering and Medicine 2019-01-01

In this invited paper, measured results of four different analog/mmWave circuits with excellent figures-of-merit (FoM) are demonstrated in SiGe technologies. First, a low noise amplifier (LNA) very high gain 19.1 dB and NF 1.3 at 19 GHz for SATCOM is demonstrated. A mmWave cascode power cell having an Psat 17 dBm 45% PAE 47 shown. npn ring oscillator (RO) delay 2.59 ps using tail current 3.57 mA Finally, performance transimpedance amplifiers (TIA) compared across two Technologies...

10.1109/bcicts54660.2023.10310735 article EN 2023-10-16

Series-peaking inductor is a crucial block in shunt-feedback Transimpedance amplifier (TIA) used for bandwidth enhancement. Achieving high-quality factor (Q) and high self-resonant frequency (SRF) of on-chip inductors challenging large TIAs. A higher <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f_T$</tex> heterojunction bipolar transistor (HBT) can relax the requirement series-peaking inductance. Due to lower inductance value,...

10.1109/bcicts54660.2023.10311051 article EN 2023-10-16
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