A5058987996- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Organic Electronics and Photovoltaics
- Silicon Nanostructures and Photoluminescence
- Legal and Labor Studies
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- GaN-based semiconductor devices and materials
- Conducting polymers and applications
- Advanced Memory and Neural Computing
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Laser Material Processing Techniques
- Advanced Sensor and Energy Harvesting Materials
- Labor Movements and Unions
- Human Rights and Immigration
- Historical and Environmental Studies
- Advanced Surface Polishing Techniques
- CCD and CMOS Imaging Sensors
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
Institute for Microelectronics and Microsystems
2014-2025
Istituto Nazionale di Fisica Nucleare, Sezione di Roma I
2004-2025
Istituto Nazionale di Fisica Nucleare, Sezione di Roma Tre
2023-2025
National Research Council
2003-2023
Istituto Nazionale di Fisica Nucleare
2021-2023
National Academies of Sciences, Engineering, and Medicine
2009-2019
Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Frascati
2015
Supélec
2011
Sorbonne Université
2011
Université Paris-Sud
2011
Contact effects have been investigated in fully printed p-channel organic thin film transistors with field effect mobility up to 2 cm2/Vs. Electrical characteristics of the transistors, channel length <200 μm, are seriously influenced by contact an anomalous increase resistance for increasing source-drain voltage. Assuming that negligible long and using gradual approximation, we evaluated current-voltage injection contact, showing I-V can be modeled as a reverse biased Schottky diode,...
A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both bottom contact and top configuration. PMMA allows reduce the interaction between π-conjugated system metal or dielectric substrate. We show that improves crystal quality along contacts’ boundaries, while still allowing good ohmic contact. Pentacene TFTs, including layer, very high field-effect mobility, μFE=0.65 1.4cm2∕Vs, for...
Abstract A flexible, fully organic detector for proton beams is presented here. The operates in the indirect mode and composed of a polysiloxane-based scintillating layer coupled to an phototransistor, that assessed flexibility low-voltage operation ( V = −1 V), with limit detection 0.026 Gy min . We present kinetic model able precisely reproduce dynamic response device under irradiation provide further insight into physical processes controlling it. This designed target real-time in-situ...
Transfer characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) often show a “hump” in subthreshold regime. This effect, also observed silicon-on-insulator (SOI) transistors, can be attributed to the presence an enhanced electrical field at edges channel, which is related specific shape edge and its surrounding oxide. In this paper we attempt analysis hump effect polysilicon TFTs combining measurements two dimensional numerical simulations, considering several...
We have analyzed the characteristics of hydrogenated amorphous silicon source gated transistors (SGTs) by using numerical simulations and we found that original SGT can be reproduced without introducing barrier lowering mechanisms at Schottky contact. Output show reduced current increase when pinch-off end channel is triggered increasing Vds, while perfect saturation drain achieved occurs. According to our simulations, even in regime metal-semiconductor interface does not reach thermionic...
Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy used to assess the as-implanted damage and crystal recovery following ELA. The electrical activation redistribution B in during ELA investigated as a function energy density (melted depth), implant dose, number pulses (melt time). activated retained dose evaluated with spreading resistance profiling secondary ion mass spectrometry. A significant...
Excess current, induced by impact ionization (kink effect) has been investigated in short-channel polysilicon thin-film transistors (TFTs). We have shown, both experimentally and using two-dimensional (2-D) numerical simulations, that the output characteristics are substantially degraded kink effect as channel length is reduced. In particular, we shown excess triggered enhanced parasitic bipolar transistor action, scales nearly L−2, thus making very difficult downscaling of TFTs. Such L...
Field effect analysis has been employed in order to calculate the density of states high quality pentacene thin-film transistors. The degradation electrical characteristics caused by exposure air studied and discussed term modification. calculated approximated two exponential terms, as amorphous silicon, it used a two-dimensional numerical simulation reproduce characteristic variation with respect temperature aging time.
Different amounts of single wall carbon nanotubes (SWCNTs) have been sprayed on amorphous silicon substrates to form Schottky barrier solar cells. The measured external quantum efficiency showed a spectral behavior depending the SWCNT network optical transparency, presenting maximum up 35% at wavelength about 460 nm. Ultrathin SWCNTs acts as semitransparent electrode and forms with silicon, enabling new generation low cost based Numerical simulations show poor contacts in collecting holes...
We report on a wearable, human tissue-equivalent, real-time dosimeter designed to quantitatively monitor radiation absorbed by patients during cancer treatments. The fully organic device has been characterized under actual clinical conditions using high-energy proton beam and an anthropomorphic phantom, with the aim simulate prostate therapy treatment. achieved full control over operation, we verified its linear response received dose. demonstrate that, proper functionalization of...
The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well off current. These effects have been explained terms hot-holes injection into insulator causing formation trap centers oxide interface states near drain.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
This paper presents a printed organic complementary technology on flexible plastic substrate with high performance N and P-type Organic Thin Film Transistors (OTFTs), based small-molecule semiconductors in solution. Challenges related to the integration of both OTFT types common flow are addressed, showing importance surface treatments. Data single devices elementary digital circuits (inverters ring oscillators) presented, demonstrating that robust reliable electrical performances can be...
Control of the source-drain contact properties in amorphous InGaZnO semiconductor active layer is relevant since a high series resistance contacts causes degradation electrical performance, particularly affecting short channel devices. We developed method to extract current-voltage characteristics injection contact, assuming that effects are negligible long devices and by introducing modified gradual approximation (quasi-two-dimensional model), take into account for effects. The present...
Mobility reduction, induced at high gate fields by scattering with surface acoustic phonons and roughness, has been investigated in self-aligned polycrystalline silicon (polysilicon) thin-film transistors (TFTs). The analysis of this effect can be influenced the presence parasitic resistance effects, a precise evaluation obtained measuring transfer characteristics devices different channel lengths. In way, we could reliably determine mobility reduction effect, which was then analyzed using...
Experimental results and numerical simulations of asymmetric fingered polysilicon thin-film transistors (AF-TFTs) are analyzed in detail. In the AF-TFTs, transistor channel region is split into two zones with different lengths separated by a floating n/sup +/ region. This structure allows an effective reduction kink effect depending on relative length subchannels, without introducing any additional series resistance. addition, appreciable leakage current also observed. The AF-TFTs...
We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor’s kinetic energy (KE). The major role played KE is in achieving highly ordered and flat films. In range KE≈3.5–6.5eV, organic field effect transistor linear mobility increases of factor ∼5. highest value (1.0cm2V−1s−1) corresponds to very uniform films (layer-by-layer type growth). temperature dependence for grown at KE&gt;6eV recalls single...