A5046449197- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and interfaces
- Graphene research and applications
- Silicon Carbide Semiconductor Technologies
Chinese Academy of Sciences
2020-2021
Institute of Semiconductors
2020-2021
University of Chinese Academy of Sciences
2021
Otto-von-Guericke University Magdeburg
2016-2018
Carbon‐doping in the concentration range from [C] = 5 × 10 17 to 1.2 19 cm −3 is employed achieve semi‐insulating properties of GaN layers as required for electronic power devices. Using propane a carbon precursor, an independent analysis incorporation during growth and its impact on electrical was obtained parameters optimum quality could be applied. We observe that C within precision measurements fully incorporated compensating deep acceptor. In series Si + co‐doped samples, were > [Si]...
Carbon-doping is proposed to reduce the dislocation-mediated leakage currents in GaN buffer layers. GaN:C grown by metalorganic vapor phase epitaxy using propane shows excellent quality up [C] = 6.7 × 1018 cm−3. Locally probing dislocations surface scanning potential microscopy reveal a transition from mostly neutral or weakly charged regions dominantly negatively relative surrounding area at high doping levels. A relation between and dislocation charge state exists. Minimum current achieved...
Semi-insulating GaN is a prerequisite for lateral high frequency and power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants achieving semi-insulating GaN, Fe, C cause distinct properties of layers since Fermi-level located either above (Fe) or below (C) midgap position. In this study, precursor-based doping in metalorganic vapor phase epitaxy at otherwise identical growth conditions control dopant concentrations layer. Using...
For developing p-GaN gate-based enhancement-mode AlGaN/GaN high-electron-mobility transistors, the removal of layer around gate region is demonstrated by photo-electrochemical etching. The etching behavior p-GaN/AlGaN/GaN heterostructures along with p-GaN/u-GaN reference samples investigated in acidic H2SO4/H3PO4 electrolyte solution. strong oxidant sulfate radical SO4−∗ formed H2SO4 stimulates process either extracting excess electrons from valence band or providing supplementary holes...
Due to its large band gap and excellent electrical properties, nitride-based heterostructures are rapidly becoming a material of choice for RF power switching applications. However, these devices require carbon or iron doped semi-insulating buffer deliver high breakdown voltages suppress off-state leakage currents. We have grown GaN using precursor-based metal-organic chemical vapor phase epitaxy by intentionally introducing impurities with doping concentration ranging from 1x10^17cm-3...
Abstract A ridge-channel AlGaN/GaN high-electron mobility transistor (HEMT) utilizing selective-area growth and epitaxial lateral overgrowth (ELO) technique is proposed in this work to achieve high-performance normally-off devices. It has a c -plane platform for the source drain contacts, sidewalls of <?CDATA $\left\{ {10\bar 11} \right\}$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close="}" open="{"> <mml:mrow> <mml:mn>10</mml:mn> <mml:mover>...