A5038380194- Dielectric properties of ceramics
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Microwave Dielectric Ceramics Synthesis
- Gas Sensing Nanomaterials and Sensors
- Ionic liquids properties and applications
- Advanced Battery Materials and Technologies
- Conducting polymers and applications
- Analytical Chemistry and Sensors
Khon Kaen University
2021-2024
Thailand National Metal and Materials Technology Center
2023
Abstract This research explores the capacitive humidity sensing properties of CuO ceramic, selected for its simplicity as an oxide and ease fabrication, in addition to remarkable dielectric properties. The sample was fabricated by sintering at 980 °C 5 h. A microstructure with a relative density 88.9% obtained. X-ray diffraction confirmed formation pure phase. Broadband spectroscopy revealed that observed giant room temperature (RT) were attributed extrinsic effects, including internal...
In this study, we unveil a novel perovskite compound, Na1/3Sr1/3Tb1/3Cu3Ti4O12, synthesized through solid-state reaction method, exhibiting remarkable giant dielectric response, nonlinear characteristics, and humidity sensing capabilities. This research highlights the emergence of Cu-rich phase, properties which undergo significant alterations depending on sintering conditions. The optimization parameters, encompassing temperature range 1040-1450 °C for 1-8 h, resulted in substantial...
The study of colossal permittivity (CP) materials possessing very high dielectric constants (ε′ > 104) has gained traction due to their suitability for application in microelectronic devices, which are evolving rapidly. In addition, the loss tangent (tanδ) and temperature stability ε′ crucial factors consider actual applications. this study, (Tb3+/4++Sb5+) co-doped TiO2 (TSTO) ceramic with an appropriate co-dopant content presented extremely value ∼9.31 × 104 ultra-low tanδ (∼0.013) at 1...
In this study, we investigated the humidity sensing properties of TiO2-based ceramics doped with tantalum pentoxide (Ta2O5) and indium tin oxide (ITO). Pure TiO2, 1%Ta-doped TiO2 (1%TTO), 1%ITO-doped (1%ISTO), 1%(Ta2O5 + ITO) co-doped (1%ISTTO) ceramic samples were obtained by sintering at 1200 °C for 3 h. The rutile phase was observed in all samples. lattice parameters single larger than those pure confirming substitution dopants. Porosity ceramics. mean grain sizes significantly reduced...
Abstract In this study, we investigated various sintering temperatures (1200 °C−1450 °C) and durations (2–6 h) conditions for preparing (Tb 1/2 Nb ) 0.01 Ti 0.99 O 2 (TNTO) ceramics. By employing high (≥1350 extended (≥4 h), successfully achieved ultra–high dielectric permittivity values ( ε ′ ∼ 2.2 − 4.1 × 10 4 remarkably low loss tangent (∼0.025−0.079). Remarkably, the temperature coefficient of TNTO ceramic, sintered at 1350 °C, exhibited exceptional stability, maintaining a value...
Giant dielectric (GD) oxides exhibiting extremely large permittivities (ε’ > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue be a significant hindrance development. In this study, novel GD oxide, an value approximately 7.55 × 104 low tanδ 0.007 at 103 Hz, has reported. These remarkable properties were attributed synthesis Lu3+/Nb5+...