A5044782312- Graphene research and applications
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
- Surface and Thin Film Phenomena
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Electrocatalysts for Energy Conversion
- Quantum-Dot Cellular Automata
- Cold Atom Physics and Bose-Einstein Condensates
- Anodic Oxide Films and Nanostructures
- Physics of Superconductivity and Magnetism
- Cosmology and Gravitation Theories
- Pulsars and Gravitational Waves Research
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
University at Albany, State University of New York
2013-2019
SUNY Polytechnic Institute
2015-2017
Virginia Commonwealth University
2010-2012
Indian Institute of Technology Kanpur
2009
Goethe University Frankfurt
2009
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials MoS2. In this work, electrostatic doping by buried gates is used to study the electronic properties of exfoliated MoS2 flakes. Creating a controllable gradient across device leads observation photovoltaic effect monolayer bilayer For thicker flakes, strong ambipolar conduction enables realization fully reconfigurable junction diodes...
In the development of semiconductor devices, bipolar junction transistor (BJT) features prominently as being first solid state that helped to usher in digital revolution. For any new semiconductor, therefore, fabrication and characterization BJT are important for both technological importance historical significance. Here, we demonstrate a device exfoliated TMD WSe2. We use buried gates electrostatically create doped regions with back-to-back p–n junctions. two central characteristics...
We experimentally investigate charge carrier transport in a graphene $p\ensuremath{-}n$ junction device by using independent $p$-type and $n$-type electrostatic gating which allow full characterization of the interface quantum Hall regime covering wide range filling factors $[\ensuremath{-}10\ensuremath{\le}({\ensuremath{\nu}}_{1},\phantom{\rule{0.16em}{0ex}}{\ensuremath{\nu}}_{2})\ensuremath{\le}10]$. Recent measurements across this quantized presume that equilibration all...
The properties of compact stars made massive bosons with a repulsive self-interaction mediated by vector mesons are studied within the mean-field approximation and general relativity. We demonstrate that there exists scaling property for mass-radius curve arbitrary boson masses interaction strengths which results in universal relation. radius remains nearly constant wide range star masses. maximum stable mass determined strength scale Landau radius. Both corresponding increase linearly so...
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of to control depends crucially on the doping profile roughness junction. Here, we use four-probe scanning tunneling microscopy spectroscopy (STM/STS) characterize two state-of-the-art graphene junction geometries at atomic scale, one with CMOS polySi gates another naturally cleaved graphite gates. Using...
The three pillars of semiconductor device technologies are (1) the p-n diode, (2) metal-oxide-semiconductor field-effect transistor and (3) bipolar junction transistor. They have enabled unprecedented growth in field information technology that we see today. Until recently, technological revolution for better, faster more efficient devices has been governed by scaling down dimensions following Moore's Law. With slowing law, there is a need alternative materials computing can continue...
We examine total ionizing dose effects in devices that can reconfigure into both n- and p-channel MOSFETs. The are fabricated using 2-D transition metal dichalcogenide semiconductor WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> allow better insight radiation than unipolar devices. central feature of the device is use buried gates to create p-type doping. Since doping not fixed, we dynamically achieve different polarity In addition,...
Metal contacts are fundamental building components for graphene based electronic devices and their properties greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel junction degrades after air exposure, due interfacial oxidation, thus creating a tunneling barrier. Most importantly, demonstrate hydrogen annealing at moderate temperature (300 0C) is an effective technique reverse the degradation.
Using ensemble Monte Carlo simulation, we have studied hot carrier spin dynamics and noise in a multi-subband GaAs quantum wire the presence of randomly varying Rashba spin-orbit interaction. The random variation reduces ensemble's dephasing time due to D'yakonov-Perel' mechanism, but otherwise makes no qualitative difference temporal relaxation characteristics. However, it spatial characteristics which change from monotonic smooth non-monotonic chaotic because complex interplay between...
We have studied the noise power spectrum associated with mobility fluctuations of hot carriers in a GaAs quantum wire frequency range 20 MHz-50 GHz using ensemble Monte Carlo simulation. This is outside regime where peak occurs wires due to well-known streaming oscillations carrier drift velocity. In this range, found exhibit nearly universal 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sup...
Metal contacts are fundamental building components for graphene based electronic devices and their properties greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel junction degrades after air exposure, due interfacial oxidation, thus creating a tunneling barrier. Most importantly, demonstrate hydrogen annealing at moderate temperature (300 0C) is an effective technique reverse the degradation.