A5071317482- Electrostatic Discharge in Electronics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Power Line Inspection Robots
- Microstructure and Mechanical Properties of Steels
- Metallurgy and Material Forming
- Advanced Surface Polishing Techniques
- Plant Molecular Biology Research
- High voltage insulation and dielectric phenomena
- Smart Grid and Power Systems
- Advanced Neuroimaging Techniques and Applications
- Metallurgical Processes and Thermodynamics
- Copper Interconnects and Reliability
- Spectroscopy and Chemometric Analyses
- Silicon and Solar Cell Technologies
- Aluminum Alloy Microstructure Properties
- High-Voltage Power Transmission Systems
- Flowering Plant Growth and Cultivation
- Essential Oils and Antimicrobial Activity
- Power Systems and Technologies
- Semiconductor materials and interfaces
Guizhou University
2024
Zhejiang University
2009-2020
Taiwan Semiconductor Manufacturing Company (China)
2015
Rutgers, The State University of New Jersey
1986-2011
Masteel (China)
2011
Low-voltage-triggering silicon-controlled rectifier (LVTSCR) having a gate structure can offer low trigger voltage in electrostatic discharge (ESD) applications. To avoid the threat of latch-up, lateral width LVTSCR is often stretched to obtain relatively high holding voltage. The resulting dimension increase, however, enlarges size LVTSCR. In this letter, new method increase developed. It based on adding floating-n-well region and without requiring additional layout area. Furthermore, with...
A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by to meet different requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide device, low-voltage-triggering SCR devices, the has appropriate low 27.3 V, high holding 24.3 highest figure merit (FOM)...
Lilies are bulbous flowers cherished for their aesthetic and medicinal value. Within the realm of lily cultivation, scale-cutting serves as a prevailing method vegetative propagation, yielding diminutive bulbs termed bulblets at base scales. However, burgeoning demand lilies necessitates optimization propagation strategies to satisfy surging requisites. This study centers on two synthetic cytokinin analogs, N-(2-chloro-4-pyridyl)-N'-phenylurea (CPPU) 2-isopentenyladenine (2-iP), identified...
Purpose: To investigate the structural covariance network disruption in Parkinson's disease (PD), and explore functional alterations of disrupted network. Methods: A cohort 100 PD patients 70 healthy participants underwent magnetic resonance scanning. Independent component analysis (ICA) was applied separately to both deformation-based morphometry maps with same calculating parameters (both decomposed into 20 ICs computed times Infomax algorithm ICASSO). Disrupted identified, then, we...
The diode-triggered silicon-controlled rectifier (DTSCR) is frequently used for low-voltage electrostatic discharge (ESD) protection applications, but such a device can exhibit two snapbacks and consequently possess an undesirable large trigger voltage. This letter investigates the mechanism underlying DTSCR's multiple triggering. An improved DTSCR reducing second voltage increasing ESD safe margin proposed verified in 65-nm complementary metal-oxide-semiconductor process. turn-on...
Chemical, biological, and physical changes occur in eggs with the increase number of storage days condition. One hundred twenty laid on same day ranging color from light brown to dark different size were bought local market. The samples stored lab room ambient temperature relative humidity. spectral data 300 1100 nm 20 sample each alternative obtained until 12th storage. Predictive model for Haugh Unit (HU) thick albumen height was developed using backward propagation neural network (BPN)...
Abstract In this study, a preparative high performance centrifugal partition chromatography (HPCPC) method for isolation and purification of the bioactive component piperine directly from ethanol extract Piper nigrum L. was successfully established by using n-hexane-ethyl acetate-methanol-water as two-phase solvent system. The upper phase (6:5:6:5, v/v) used stationary CPC. Under optimum conditions, 40 mg at 98.5% purity, determined HPLC, yielded 300 crude in single CPC separation. peak...
The design, fabrication and characterization of high-voltage 4H-SiC merged PiN/Schottky (MPS) diodes operating close to the avalanche limit are presented. With a blocking voltage (VB) 4.3 kV specific on-resistance (Ron) 20.9 mΩ cm2, figure-of-merit (FOM), equal V2B/Ron, is 885 MW cm−2. Both FOM among highest levels reported date. trade-off between forward conduction reverse leakage experimentally investigated analyse optimum range Schottky spacing.
Abstract Power transmission line is one of the most important infrastructures power system, and its safety monitoring great significance. The conventional way fault lines by only setting threshold value on single temperature data strain clamp turned out to multiple misjudgements delayed alarms, causing increment operation risk line. In this paper, various types time-varying sensors such as data, environmental cable ampacity are accounted. Also, an unsupervised machine learning algorithm -...
Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, improved grounded-gate N-channel (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed high holding voltage ESD applications. The GGSCR demonstrates double snapback behavior as result of progressive trigger-on GGNMOS and SCR. makes...
Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated both ESD performance. Varying from the architecture, layout design metal interconnection, candidate show different parasitic capacitance, efficiency, turn speed. Potential solution further application is verified.
A modified lateral‐diffusion metal–oxide–semiconductor (MLDMOS) device with improved electrostatic discharge (ESD) protection performance is proposed for high‐voltage ESD protection. In comparison the traditional LDMOS and an embedded silicon‐controlled rectifier (LDMOS‐SCR), has better robustness higher holding voltage. By optimizing key parameters, such as spacing between drain poly gate, effective channel length, number of fingers, MLDMOS can achieve a maximum failure current over 80...
Whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under 0.18 μm radio frequency (RF) CMOS process is proposed in this paper. Complementary silicon controlled rectifier (SCR) with different layouts I/O pad ESD evaluated and compared traditional SCR diode. Results show that the island complementary (MSCRIsland) structure has highest figure of merit (FOM) its RF passes 6 kV human body model (HBM), while extra 0.28 dB (NF) 178 fF capacitance introduced...
A high voltage laterally insulated-gate-bipolar-transistor (LIGBT) built in ultra-thin silicon-on-insulator (SOI) is reported. theoretical analysis about the efficient approach to increasing holding of LIGBT starting with BJT's has been proposed. Higher and almost same turn-on speed achieved by segmenting emitter area increase resistance.
This paper reports the design, fabrication and characterization of high voltage 4H -SiC merged PiN/Schottky-barrier (MPS) diodes with an active area 1.4mm 2 . For comparison purposes, Schottky barrier, PiN MPS smaller size (8.1x10 -2 mm ) have also been designed fabricated on same wafer a 30 µm, n=2x10 15 cm -3 doped drift layer. The spacing between adjacent p+ regions in has to be 7, 8, 9, 10µm so that trade-off forward current capability reverse leakage can investigated. A multi-step...
The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and inner boundary of N+ at drain side conventional LDMOS transistor, we fabricate LDMOS-SCR SCR-LDMOS devices triggering order in 0.5 μm bipolar-CMOS-DMOS process, respectively. First, perform transmission line pulse (TLP) DC-voltage...