Seung Eon Moon

ORCID: 0000-0003-2443-8907
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Research Areas
  • Ferroelectric and Piezoelectric Materials
  • Acoustic Wave Resonator Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Microwave Dielectric Ceramics Synthesis
  • Analytical Chemistry and Sensors
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Chemical Sensor Technologies
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Thermal Radiation and Cooling Technologies
  • Advanced Sensor and Energy Harvesting Materials
  • Microwave Engineering and Waveguides
  • Advanced Thermoelectric Materials and Devices
  • ZnO doping and properties
  • Innovative Energy Harvesting Technologies
  • Transition Metal Oxide Nanomaterials
  • Advanced Antenna and Metasurface Technologies
  • MXene and MAX Phase Materials
  • Thermal properties of materials
  • Multiferroics and related materials
  • Electronic and Structural Properties of Oxides
  • Advanced MEMS and NEMS Technologies
  • Nanowire Synthesis and Applications
  • Surface Modification and Superhydrophobicity
  • Mechanical and Optical Resonators

Electronics and Telecommunications Research Institute
2016-2025

Yonsei University
2022-2024

Gangnam Severance Hospital
2023-2024

Korea University of Science and Technology
2016-2023

Daejeon University
2014-2020

Kyung Hee University
2019

Combustion Institute
2009

RWTH Aachen University
2009

Seoul National University
1999-2008

As practical interest in flexible/or wearable power-conversion devices increases, the demand for high-performance alternatives to thermoelectric (TE) generators based on brittle inorganic materials is growing. Herein, we propose a flexible and ultralight TE generator (TEG) carbon nanotube yarn (CNTY) with excellent performance. The as-prepared CNTY shows superior electrical conductivity of 3147 S/cm due increased longitudinal carrier mobility derived from highly aligned structure. Our TEG...

10.1021/acsnano.7b01771 article EN ACS Nano 2017-07-12

Abstract Flexible hydrogels are receiving significant attention for their application in wearable sensors. However, most hydrogel materials exhibit weak and one-time adhesion, low sensitivity, ice crystallization, water evaporation, poor self-recovery, thereby limiting as These issues only partly addressed previous studies. Herein, a multiple-crosslinked poly(2-(methacryloyloxy)ethyl)dimethyl-(3-sulfopropyl)ammonium hydroxide-co-acrylamide) (P(SBMA-co-AAm)) multifunctional is prepared via...

10.1007/s40820-023-01015-7 article EN cc-by Nano-Micro Letters 2023-02-15

Among the various metal oxides, SnO2 has been most widely exploited as a semiconductor gas sensor for its excellent functionalities. Models illustrating sensing mechanism of have proposed and tested to explain experimentally derived "power laws". The models, however, are often based on somewhat simplistic assumptions; instance, net charge transfer from an adsorbate surface site is assumed occur only by integer values independent crystallographic planes. In this work, we use layer-shaped...

10.1021/am404397f article EN ACS Applied Materials & Interfaces 2013-12-05

Ultra-sensitive RGO gas sensors with a facile preparation method are presented. The sensor composed of nanofibers showed excellent sensitivity to NO<sub>2</sub>gas.

10.1039/c4nr00332b article EN Nanoscale 2014-01-01

The effects of anisotropic dielectric properties ferroelectric Ba1−xSrxTiO3 (BST) films on the characteristics interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST with (001), (011), and (111) orientation were epitaxially grown MgO substrates, respectively, by pulsed laser deposition method. engineered investigated using capacitors. calculated constant tunability 40 V dc bias variation quality factor values for IDT based oriented 9 GHz...

10.1063/1.1609658 article EN Applied Physics Letters 2003-09-12

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaN∕c-Al2O3 substrates by the help Au catalyst was realized. The wall thicknesses 80–140nm and an average height about 2μm were grown self-formed thin film during growth substrates. It found that both single-crystalline nanowalls catalytic have epitaxial relation to GaN in synchrotron x-ray scattering experiments. Hydrogen-sensing properties also been investigated.

10.1063/1.2430918 article EN Applied Physics Letters 2007-01-15

Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO<sub>2</sub>ferroelectric gate insulators.

10.1039/d0nr02401e article EN Nanoscale 2020-01-01

Low power consuming and highly responsive semiconductor-type microelectromechanical systems (MEMS) gas sensors are fabricated for real-time environmental monitoring applications. This subsystem is developed using a sensor module, Bluetooth personal digital assistant (PDA) phone. The module consists of NO2 or CO signal processing chips. MEMS composed microheater, sensing electrode, material. Metal oxide nanopowder drop-coated onto substrate microheater integrated into the module. change in...

10.4218/etrij.13.1912.0008 article EN ETRI Journal 2013-07-29

Nonvolatile memory characteristics of the ferroelectric field-effect transistors (FeFETs) were investigated by introducing metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate-stacks, employing Al-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (Al:HfO ) thin films. The obtained window (MW) MFMIS FETs increased from 1.0 to 2.8 V increasing areal ratios metal–insulator–semiconductor (MIS) metal–ferroelectric–metal...

10.1109/ted.2019.2961117 article EN IEEE Transactions on Electron Devices 2020-02-01

Compositionally graded (Bax, Sr1−x)TiO3 (BST) thin films were deposited on MgO substrates by pulsed laser ablation. The microwave properties of the BST investigated at frequencies with coplanar waveguide (CPW) meander-line phase shifters as a function direction composition gradient respect to substrate room temperature. CPW using BaTiO3(BT)→SrTiO3(ST) and ST→BT exhibited differential shift 73° 22° 10 GHz dc bias voltage 150 V, respectively. figure merit was 14.6 deg/dB for BT→ST film, film....

10.1063/1.1565705 article EN Applied Physics Letters 2003-03-27

A critical challenge in using thermoelectric generators (TEGs) for charging the portable or wearable electronics has been their limited outputs, as available temperature differential on human body (∆ T ext ) is typically less than 10 K. Furthermore, thermal resistance ( R th at TEG–air interface often overwhelms of TEG itself, which makes within merely a small fraction ∆ . Here, designs systems applications based both theory and systematic experiments are studied. First, this study...

10.1002/admt.201600292 article EN Advanced Materials Technologies 2017-04-20

Effects of controlling the film thickness ferroelectric Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) thin were investigated to figure out important design strategies for metal- ferroelectric-insulator-semiconductor (MFIS) capacitors. Even though maximum remnant polarization (2Pr) was obtained be 23.4 μC/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> HZO...

10.1109/led.2019.2917032 article EN IEEE Electron Device Letters 2019-05-15

Ferroelectric switching kinetics of the Al-doped HfO2 (Al:HfO2) thin films prepared by atomic layer deposition process were investigated varying dose time oxygen precursor (O3). When O3 was reduced to 3 s, Al:HfO2 exhibited an enhanced remnant polarization (2Pr) 10.2 μC/cm2 due suppression monoclinic phase and increase in ratio vacancy. Double-pulse Kolmogorov–Avrami–Ishibashi model used obtain detailed quantitative information on films. The estimated values activation energy showed strong...

10.1116/1.5110621 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2019-07-31

Thermoelectric generators have found many applications where the heat source can be either flat or curved. For a curved source, flexible thermoelectric are generally used. A filler material with low thermal conductivity provide additional mechanical support to module and reduce convection radiation losses. Herein, effect of three different materials on output performance rigid is investigated. At first, theoretical models derived experimental study validated models. The revealed that modules...

10.1021/acsami.1c20004 article EN ACS Applied Materials & Interfaces 2021-12-15

Thermal management is essential for living organisms and electronic devices to survive maintain their own functions. However, developing flexible cooling electronics or biological systems challenging because conventional coolers are bulky require rigid batteries. In nature, skins help a constant body temperature by dissipating heat through perspiration. Inspired an artificial perspiration membrane that automatically regulates evaporation depending on using the programmed deformation of...

10.1002/adma.201905901 article EN Advanced Materials 2019-11-19

Ferroelectric field-effect transistors (FETs) with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gate stack were fabricated and characterized to elucidate the key process parameters optimize conditions for guaranteeing nonvolatile memory operations of device when undoped HfO2 was employed as ferroelectric insulator. The impacts top (TG) MFM part on MFMIS-FETs intensively investigated TG chosen metal Pt or oxide ITO electrode. window ITO/HfO2/TiN/SiO2/Si increased 3.8 V by...

10.1088/1361-6528/abc98c article EN Nanotechnology 2020-11-11

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.

10.1039/d0tc01105c article EN Journal of Materials Chemistry C 2020-01-01

Background: The community clinic (CC) is a vital component of rural healthcare in Bangladesh, extending primary health services to remote areas. Objective: To assess the client’s satisfaction regarding Bangladesh.Materials and Methods: This cross-sectional study was conducted at Boali Community Clinic, located Kaligonj upazila Gazipur, Bangladesh. A total 140 respondents were included this study, convenience sampling technique employed. Data collected using pre-tested semi-structured...

10.3329/kyamcj.v15i02.70402 article EN KYAMC Journal 2025-03-16

Ba 0.6 Sr 0.4 TiO 3 thin films were grown on MgO(001) substrates using pulsed-laser deposition. The highly oriented along the (001) direction, and showed a high electro-optic response to an external electric field. quadratic coefficient Rc was 1.0×10−14 m2/V2, birefringence variation as large 0.09. Various applications well microwave of barium strontium titanate are expected.

10.1063/1.1556962 article EN Applied Physics Letters 2003-02-28

HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited various ways. Specifically, sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization (Pr) is demonstrated using conventional rapid thermal annealing at high temperatures of least 750°C. Here we show that rapidly transited a larger 2 Pr 24μ C/cm <sup...

10.1109/led.2019.2959802 article EN IEEE Electron Device Letters 2019-12-17

The explosive growth of data and information has motivated technological developments in computing systems that utilize them for efficiently discovering patterns gaining relevant insights. Inspired by the structure functions biological synapses neurons brain, neural network algorithms can realize highly parallel computations have been implemented on conventional silicon transistor‐based hardware. However, composed multiple transistors allow only binary to be stored, processing such digital...

10.1002/aisy.202000111 article EN cc-by Advanced Intelligent Systems 2020-08-23
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