A5060753072- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
- Neural dynamics and brain function
- Semiconductor materials and devices
- Neuroscience and Neural Engineering
- Neural Networks and Applications
- Energy Harvesting in Wireless Networks
- Innovative Energy Harvesting Technologies
- Advanced Thermoelectric Materials and Devices
Electronics and Telecommunications Research Institute
2019-2022
Kyung Hee University
2020-2022
HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) materials exhibiting ferroelectricity in ultra-thin layers can be deposited various ways. Specifically, sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization (Pr) is demonstrated using conventional rapid thermal annealing at high temperatures of least 750°C. Here we show that rapidly transited a larger 2 Pr 24μ C/cm <sup...
In this paper, we present the results of a preliminary study on self-powered autonomous wireless sensor node by using thermoelectric energy generator based Silicon (Si) legs, management integrated circuit (EMIC), Radio Frequency (RF) module with temperature and humidity sensor, etc. A novel structure is designed as an module, which consists 127 pairs legs fabricated tested to demonstrate feasibility generating electrical power under gradient 70K. EMIC has three key features besides high...
In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, temperature, and time, investigated optimal conditions for realizing ferroelectricity HZO layers deposited by sputtering systems. More specifically, examined how behaviors evolved as a function of temperatures. Our results showed that capped top electrode, temperature was...
Abstract A crossbar array architecture employing resistive switching memory (RRAM) as a synaptic element accelerates vector–matrix multiplication in parallel fashion, enabling energy-efficient pattern recognition. To implement the function of synapse RRAM, multilevel resistance states are required. More importantly, large on/off ratio RRAM should be preferentially obtained to ensure reasonable margin between each state taking into account inevitable variability caused by inherent mechanism....
Since ferroelectricity has been observed in simple binary oxide material systems, it attracted great interest semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location which the ferroelectric devices are implemented depends on specific application, so process constraints required for device fabrication may be different. In this study, we investigate characteristics of Zr doped HfO2 layers treated at high temperatures. A...
Metal–ferroelectric–metal (MFM) capacitors with Pt‐/Al‐doped HfO 2 (Al:HfO )/TiN structures are characterized to demonstrate the ferroelectricity of Al:HfO thin films deposited by atomic layer deposition H O precursor at various annealing conditions. When crystallization temperature increases from 750 850 °C, value ferroelectric remnant polarization (2 P r ) 11.5 17.1 μC cm −2 for postmetallization (PMA) process, whereas it 8.1 11.4 postdeposition (PDA) process. The variations in...
Abstract Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors were characterized to elucidate the optimum design schemes for ferroelectric field-effect transistor applications. The Hf 1− x Zr O 2 (HZO) thin films (18 nm) prepared on SiO and ZrO insulator layers (ILs) with different film thicknesses. choice of 10 nm thick IL was found be an condition properly balance between values electric fields applied HZO ( E ) layers, leading effective improvement in capacitance coupling ratio...
Neuromorphic systems heavily rely on multiply-accumulate (MAC) operations to recognize image patterns. The computation performed repeatedly can be speeded up by a cross-point array. In the architecture, weight storage element should consist of resistive memory and additional selector. To evaluate recognition accuracy handwritten digits, we construct arrays in simulation with 2-bit weights obtained from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...