Hideki Watanabe

ORCID: 0000-0003-2723-9524
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About
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Research Areas
  • Semiconductor Lasers and Optical Devices
  • Photonic and Optical Devices
  • Astro and Planetary Science
  • Semiconductor Quantum Structures and Devices
  • GaN-based semiconductor devices and materials
  • Advanced Fiber Laser Technologies
  • Planetary Science and Exploration
  • Astrophysics and Cosmic Phenomena
  • Optical Coatings and Gratings
  • Laser-Matter Interactions and Applications
  • Nonlinear Optical Materials Studies
  • Radiation Detection and Scintillator Technologies
  • Gamma-ray bursts and supernovae
  • Fuel Cells and Related Materials
  • Advanced Polymer Synthesis and Characterization
  • biodegradable polymer synthesis and properties
  • Space Exploration and Technology
  • Synthesis and properties of polymers
  • Corrosion Behavior and Inhibition
  • Silicone and Siloxane Chemistry
  • GNSS positioning and interference
  • Organic Electronics and Photovoltaics
  • Icing and De-icing Technologies
  • Precipitation Measurement and Analysis
  • History and Developments in Astronomy

Sony Computer Science Laboratories
2013-2023

Sony Corporation (United States)
2020

Tohoku University
2004-2018

Shizuoka University
2011

Yokohama National University
2011

Toyo Engineering (Japan)
2006

Polymer Research Center
2006

Tokyo Ohka Kogyo (Japan)
2004

Saga University
1998

ABSTRACT We present results from a multi-chord Pluto stellar occultation observed on 2015 June 29 New Zealand and Australia. This occurred only two weeks before the NASA Horizons flyby of system serves as useful comparison between ground-based space results. find that Pluto's atmosphere is still expanding, with significant pressure increase 5 ± 2% since 2013 factor almost three 1988. trend rules out, today, an atmospheric collapse associated recession Sun. A central flash, rare occurrence,...

10.3847/2041-8205/819/2/l38 article EN The Astrophysical Journal Letters 2016-03-10

Abstract We demonstrate the lateral optical confinement of GaN-based vertical-cavity surface-emitting lasers (GaN-VCSELs) with a cavity containing curved mirror that is formed monolithically on GaN wafer. The output wavelength devices 441–455 nm. threshold current 40 mA ( J th = 141 kA/cm 2 ) under pulsed injection W p 100 ns; duty 0.2%) at room temperature. confirm by recording near-field images and investigating dependence aperture size. beam profile can be fitted Gaussian having...

10.1038/s41598-018-28418-6 article EN cc-by Scientific Reports 2018-07-03

GaInAsP photonic crystal point-shift nanolasers operate at room temperature under pulsed and continuous-wave condition by photopumping with an effective threshold of ∼1 μW, a single-mode peak over 40 dB, small modal volume ∼0.2 times the cubic wavelength. We report details its design, fabrication process, measurement method, lasing characteristics. In particular, we reveal that wide spectral broadening often observed for is caused large thermal chirping. Then, focus on nanolaser-based liquid...

10.1109/jstqe.2011.2134837 article EN IEEE Journal of Selected Topics in Quantum Electronics 2011-05-27

Abstract We demonstrate a room-temperature continuous-wave operation of green vertical-cavity surface-emitting laser (VCSEL) with 20 μ m long cavity possessing dielectric curved mirror formed over {20−21} semi-polar gallium nitride substrate. The emission wavelength and the threshold current were 515 nm 1.8 mA, respectively. also confirmed that white light is generated by overlaying three prime colors light, i.e. red, blue green, emitted only from VCSEL.

10.35848/1882-0786/ab7bc8 article EN cc-by Applied Physics Express 2020-03-02

The continuous wave operation of a gallium-nitride-based vertical-cavity surface-emitting laser (GaN-based VCSEL) that uses boron ion implantation for lateral current confinement and curved mirror optical was investigated. threshold 0.25 mA (Jth = 3.5 kA cm−2) 3 μm diameter aperture at room temperature the lasing wavelength 445.3 nm. This is lowest recorded GaN-based VCSEL. result considered to be milestone further miniaturization VCSELs by implementation due incorporation mirror.

10.7567/1882-0786/ab03eb article EN Applied Physics Express 2019-02-01

Abstract We report single transverse mode operation of a blue GaN-based vertical-cavity surface-emitting laser (GaN-VCSEL) with monolithically incorporated curved mirror. For device 4 μ m current aperture diameter and mirror radius curvature (ROC) 51 m, was confirmed up to an output power 3.2 mW under continuous wave at 20 °C. smaller ROC 31 multi confirmed, indicating that the can be controlled by cavity design such GaN-VCSELs.

10.7567/1882-0786/ab3106 article EN cc-by Applied Physics Express 2019-07-11

Context. In 2009, the Sun and Earth passed through equatorial plane of Jupiter therefore orbital planes its main satellites. It was equinox on Jupiter. This occurrence made mutual occultations eclipses between satellites possible. Experience has shown that observations such events provide accurate astrometric data able to bring new information dynamics Galilean Observations are under form photometric measurements, but need be organization a worldwide observation campaign maximizing number...

10.1051/0004-6361/201423854 article EN Astronomy and Astrophysics 2014-09-23

We have demonstrated passively mode-locked operation of a GaInN bisectional laser diode in dispersion-compensated external cavity. With negative group velocity dispersion the cavity, we obtained femtosecond optical pulses after spectral filtering with bandpass filter. The pulse duration was as short 200 fs time-bandwidth product 0.41. This is shortest ever reported for diode.

10.1063/1.4747808 article EN Applied Physics Letters 2012-08-20

Numerical simulations are performed to characterize the micro- and macro-scale aspects of electro-chemo-mechanical coupling behavior a positive-electrolyte-negative (PEN) structure under SOFC operation. The mathematical homogenization method is applied evaluate macroscopic material properties porous electrodes by performing corresponding microscopic analyses. In particular, potential transfer conditions at pore surfaces triple-phase boundaries homogenized be source terms in electron-ion...

10.1149/1.3570073 article EN ECS Transactions 2011-04-25

Abstract We report narrow band‐filtered imaging observations of the Jovian H 3 + 3.4‐μm emission using IRCS (infrared camera and spectrograph) on Subaru telescope taken 25 May 2016. Approximately 1 hr data was at intervals 45–110 s, with high spatial resolution (~0.2 arcsec) adaptive optics. In northern polar region, we found bright patch‐like emissions poleward side main oval. One them had a pulsation period ~10 min. utilized an model to investigate response time abrupt periodic variations...

10.1029/2018gl079411 article EN Geophysical Research Letters 2018-10-22

KamLAND is a massive liquid-scintillator-based neutrino detector studying low energy oscillation. The experiment has discovered large deficit of the reactor flux with baseline 180km in year 2002. This result placing strong impact on elementary particle physics. makes use one kiloton liquid scintillator (LS) as active target. largest homogeneous LS world. Although light yield and attenuation length were measured to be 57% anthracene ~10m, test experiments, when it used detector, effective...

10.48550/arxiv.physics/0404071 preprint EN other-oa arXiv (Cornell University) 2004-01-01

二峰性のゴム粒子径分布を有するメチルメタクリレートーブタジエンースチレン樹脂 (MBS樹脂) の耐衝撃性と透明性を調査した.今回は, 大粒子径成分としてゴム変性MBS樹脂, 小粒子径成分として乳化グラフトを用いた場合の落錐衝撃強度を中心に評価した. その結果, ゴム粒子径分布の二峰性化により大幅な落錐衝撃強度の向上が見られたが, シャルピー衝撃強度とは傾向が異なった. 白化部の透過型電子顕微鏡 (TEM) 写真からは広範囲なゴム粒子の変形とボイドが観察され, クレーズは見当たらないことから耐衝撃性ポリスチレン (HI-PS) と異なる耐衝撃性発現メカニズムを有することが示唆された. また, ゴム粒子径分布の二峰性化により透明性の向上も見られた.

10.1295/koron.61.114 article EN KOBUNSHI RONBUNSHU 2004-01-01

Femtosecond optical pulses with a duration of 200 fs were generated using GaInN bisectional laser diode passively mode-locked in dispersion-compensated external cavity spectral filtering performed outside the cavity. The fact that femtosecond obtained negative intracavity group-velocity dispersion and saturable absorber recovery time about 15 ps indicates mechanism involved was soliton mode-locking. spectro-temporal investigation output directly emitted after revealed broadening due to...

10.7567/jjap.52.08jg06 article EN Japanese Journal of Applied Physics 2013-05-31

二峰性のゴム粒子径分布を有するメチルメタクリレートーブタジエンースチレン樹脂 (MBS樹脂) の耐衝撃性と透明性を調査した. その結果, 耐衝撃性は平均ゴム粒子径が0.75μm未満では平均ゴム粒子径に依存し, 0.75μm以上では平均ゴム粒子径によらずほぼ一定となった. 単峰性と二峰性の間には数値における差は見られなかったが, TEM観察よりクラック先端部のクレーズ発生状況に差があることが確認された. これにより単峰性と二峰性では耐衝撃性発現メカニズムに差があることが示唆された. 一方透明性は, 大粒子径の存在により低下したが, 少量の存在では低下は少なかった. 耐衝撃性と透明性のバランスからは, 単峰性より二峰性の方が優れた.

10.1295/koron.59.527 article EN KOBUNSHI RONBUNSHU 2002-01-01

二峰性のゴム粒子径分布を有するメチルメタクリレートーブタジエンースチレン樹脂 (MBS樹脂) の耐衝撃性と透明性を調査した. 今回は, 大粒子径としてのゴム変性MBS樹脂と小粒子径としての乳化グラフトのブレンド物を評価した. その結果, ゴム粒子径の大きなゴム変性MBS樹脂は乳化グラフトのブレンドにより高い耐衝撃性を示したが, 乳化グラフトゴムが少ない場合は透明性が低かった. 破壊部のSEM観察と亀裂先端部のTEM観察の結果, ゴム変性MBS樹脂と乳化グラフトのブレンド物の耐衝撃性にはせん断降伏が重要な役割を果たしていることが示唆された.

10.1295/koron.60.6 article EN KOBUNSHI RONBUNSHU 2003-01-01

The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.

10.1364/cleo_si.2018.stu4q.2 article EN Conference on Lasers and Electro-Optics 2018-01-01

The recent progress of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with incorporated curved mirrors at one end their cavities is reviewed. GaN-VCSELs consisting 3 InGaN/GaN quantum wells, current apertures formed by boron ion implantation, and the were fabricated. near-field far-field patterns exhibited Gaussian-like profiles, divergences agreed well theoretical values calculated from radius curvature mirror cavity length. beam waist for a GaNVCSEL 6-μm aperture was as...

10.1117/12.2511469 article EN 2019-03-01

10.7567/ssdm.2011.p-7-15 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2011-09-29

In this paper, we report a high efficiency, addressable 940 nm Vertical-Cavity Surface-Emitting Laser (VCSEL) array with tight pitch of 10 m for compact, low-power sensing light source. High electrical resistance small diameter semiconductor DBR is major issue to obtain high-power conversion efficiency in achieving VCSEL array. We have developed highly efficient back side emitted intracavity contacted structure, mesa 7.5 μm, and optical aperture 3.0 μm. The power exceeded 30% from 0.5 mW...

10.1117/12.2648810 article EN 2023-03-15

The Centaur (60558) Echeclus was discovered on March 03, 2000, orbiting between the orbits of Jupiter and Uranus. After exhibiting frequent outbursts, it also received a comet designation, 174P. If ejected material can be source debris to form additional structures, studying surroundings an active body like provide clues about formation scenarios rings, jets, or dusty shells around small bodies. Stellar occultation is handy technique for this kind investigation, as can, from Earth-based...

10.48550/arxiv.2310.18084 preprint EN cc-by arXiv (Cornell University) 2023-01-01
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