A5101802513- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Complex Systems and Time Series Analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Market Dynamics and Volatility
- Stock Market Forecasting Methods
- Financial Risk and Volatility Modeling
- Advanced Memory and Neural Computing
- Nonlinear Dynamics and Pattern Formation
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Spondyloarthritis Studies and Treatments
- Bone and Joint Diseases
- Gout, Hyperuricemia, Uric Acid
- Financial Markets and Investment Strategies
- Chaos control and synchronization
Peking University
2025
Peking University Third Hospital
2025
Wuhan University
2019-2020
Guangxi University
2017
Taiwan Semiconductor Manufacturing Company (Taiwan)
2007-2009
National University of Singapore
2003
We describe the arthroscopic tibial tubercle osteophyte debridement and gout crystal clearance for treating Osgood-Schlatter disease combined with in patients experiencing anterior knee pain. Preoperative assessment includes medical history review, physical examination, imaging studies. The surgical procedure involves entry, calcification clearance, removal. Postoperative rehabilitation allows full weightbearing, moderate flexion exercises. This approach offers a promising treatment option...
Financial time series analyses have played an important role in developing some of the fundamental economic theories. However, many published financial focus on long-term average behavior a market, and thus shed little light temporal evolution which from to may be interrupted by stock crashes crises. Consequently, terms complexity science, it is still unknown whether market during crash decreases or increases. To answer this question, we examined variation permutation entropy (PE) Chinese...
How different are the emerging and well-developed stock markets in terms of efficiency? To gain insights into this question, we compared an important market, Chinese largest most developed US market. Specifically, computed Lempel–Ziv complexity (LZ) permutation entropy (PE) from two composite indices, Shanghai exchange index (SSE) Dow Jones industrial average (DJIA), for both low-frequency (daily) high-frequency (minute-to-minute)stock data. We found that market is basically fully random...
We present a physical model for tunneling current through high-/spl kappa/ gate stacks including an ultra thin interfacial layer between layers and the Si substrate. The energy band offsets of are determined by XPS. Accurate carrier quantization in substrate or is found to play more significant role dielectrics than SiO/sub 2/. Excellent agreement simulated measured currents achieved over several with both poly-Si metal electrodes. also applied analyze scalability HfO/sub 2/ HfAlO future...
The strain effect and channel length dependence of bias temperature instability on dual metal gate complementary metal-oxide-semiconductor field enhanced transistors with HfSiON dielectric were studied in detail. For larger than 0.1 μm, both positive negative instabilities (PBTI NBTI) not affected by the tensile obviously. As scaling down to less degradation after PBTI stress was still influenced strain, however, NBTI significantly. In addition, BTI extensively investigated under constant...
A comprehensive study on bulk trap enhanced gate-induced drain leakage (BTE-GIDL) currents in high-MOSFETs is reported this letter. The dependence of GIDL for various parameters, including the effect Zr concentration , high-film thickness, and electrical stress investigated. incorporation into reduces GIDL. was also found to reduce with thinner high-film. In addition, a significant correlation between density high- film established. Possible mechanisms were provided explain role trapping...
Highest planar HK/MG PFET performance (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 790 muA at I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> 100 nA, Vdd= 1 V and Lg= 33 nm) has been demonstrated with a gate-first dual-metal CMOS integrated process proven by functional SRAM cell. Integrating modern stressors without IL re-growth achieving band edge work function increasing T...
A novel 1000 degC-stable Ir <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages good hole mobilities are measured in Si/HfSiON transistors. The degC thermal stability above pure metal...
Herding behavior is thought to often occur during market frenzy, stock crashes, financial crises, as well strong bull markets. The issue has been gaining increasing attention in recent years, the hope that timely detection of herding can be used implement effective means mitigate them, thus make more rational. So far, mainly studied using low-frequency data with methods such LSV, PCM, CH, CKK, and HS. Such studies only report whether exists a long time span, few months even essentially...
This paper reports a comprehensive study on the influence of nitrogen incorporation high-k (HK) device performance and reliability. Two approaches including dielectric annealing interfacial layer (IL) are investigated. It is found HK better solution for trade-off between mobility inversion oxide thickness than IL annealing. The positive bias temperature instability characteristic improved by However, lowers barrier thus results in an abnormally high leakage current.
In Hf-based stacks with TaC and MoNx dual metal gates, PBTI is found to be a concern. Although HfSiON reduces PBTI, worse NBTI by nitridation poses potential issue. also degraded channel strain. A new pulse BTI technique presented for electron trapping, which demonstrates the minimization of de-trapping used simultaneously characterize fast slow trapping components. Electron characteristics on IL HK thickness were studied. It revealed that from tunneling mechanism behavior during stress...
Systemic risks have to be vigilantly guided against at all times in order prevent their contagion across stock markets. New policies also may not work as desired and even induce shocks market, especially those emerging ones. Therefore, timely detection of systemic policy-induced is crucial safeguard the health In this paper, we show that relative entropy or Kullback–Liebler divergence can used identify Concretely, analyzed minutely data two indices, Dow Jones Industrial Average (DJIA)...