A5102009323- ZnO doping and properties
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Ga2O3 and related materials
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Neuroscience and Neural Engineering
- Lanthanide and Transition Metal Complexes
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Magnetism in coordination complexes
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Advanced biosensing and bioanalysis techniques
- Metal and Thin Film Mechanics
- Solar and Space Plasma Dynamics
- Pulsed Power Technology Applications
- Luminescence Properties of Advanced Materials
- Neural dynamics and brain function
- Quantum Dots Synthesis And Properties
- Electromagnetic Launch and Propulsion Technology
- Electromagnetic Compatibility and Measurements
IMEC
2023-2025
Indian Institute of Technology Delhi
1975-2025
Indian Institute of Technology Indore
1985-2024
KU Leuven
2023
Maharshi Dayanand University
2022-2023
Indian Institute of Technology Hyderabad
2022
National Institute of Technology Kurukshetra
2018
Research Centre Imarat
2017
Central Electronics Engineering Research Institute
2013-2016
Council of Scientific and Industrial Research
2016
A series of lanthanide (samarium and terbium) β-diketonates with heteroaromatic auxiliary ligands was synthesized. The prepared complexes were characterized through electrochemical, thermal, spectroscopic analyses. Infrared analysis revealed the binding respective metal ion to oxygen nitrogen atoms diketone ancillary ligands. Thermogravimetry/differential thermogravimetry profiles provided thermal information specified high stability complexes. exhibited sharp structured Ln-based emission in...
This study investigates the impact of substrate temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{T}_{\text{sub}}\text{)}$</tex-math> </inline-formula> on structural, optical, and electrical properties dual ion beam sputtering (DIBS)-grown Sb notation="LaTeX">$_{\text{2}}$</tex-math> S notation="LaTeX">$_{\text{3}}$</tex-math> thin films....
Compact low-power devices with ultrafast processing speed are the fundamental building blocks for development of state-of-the-art logic systems and memristor prominently fulfills these demands plays a major role in digital circuit design. In this work, design, implementation, performance evaluation memristor-based gates, such as NOT, AND, NAND, OR, NOR, XOR, XNOR, combinational circuits, adder, subtractor, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Metal–semiconductor–metal (MSM) photodetectors offer efficient solutions for many applications. Here, we combine surface energy assisted wet transfer of a MoS2 monolayer with patterned interdigitated platinum electrodes. The chemical vapor deposition (CVD)-deposited is analyzed various performance parameters. achieved dark current and photocurrent are 5.37 × 10–8 A on the order 10–5 A, respectively. peak responsivity external quantum efficiency 13.15 mA/W at 480 nm 21.86% 4.5 V, Ion/Ioff...
Inspired by techniques designed for 3D integration, a die-to-wafer (D2W) transfer method can enable MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -channel devices in semiconductor fab either high-performance CFET or hybrid-integrated CMOS. A Collective D2W(CoD2W) technique was successfully developed to epitaxial single-layer from sapphire 300mm device wafers which facilitates uniform and residue-free "dies". We report FEOL...
Achieving low contact resistance in advanced electronic devices remains a significant challenge. As the demand for faster and more energy-efficient grows, 2D engineering emerges as promising solution next-generation electronics. Beyond graphene, 1T-WTe2 has gained attention due to its outstanding electrical transport properties, quantum phenomena, Weyl semimetallic characteristics. We demonstrate direct wafer-scale growth of via molecular beam epitaxy (MBE) use it layered materials like...
Abstract In this work, an in-depth study of the strain originating from metallic pads FET transistors with TMDC channels are reported. Presence tensile caused by Ni/Pd fabricated a lift-off process is confirmed high resolution tip-enhanced Raman and photoluminescence. This field appears to extend in 1~2 µm vicinity affect optical bandgap layer. The severity profile mechanical stress seems depend on factors like device architecture, channel length, contact area pads. Results indicate that...
In this article, we report on estimating the drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{d}$ </tex-math></inline-formula> ) characteristics of polycrystalline MgZnO/ZnO (MZO) and MgZnO/CdZnO (MCO) heterojunctions-based heterostructure FET (HFET). The developed model utilizes ionized interface state density notation="LaTeX">${Q}_{i}$ its interrelationship with barrier layer...
In this article, the effect of SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer is demonstrated on dual ion beam sputtered yttria-based memristive devices for first time. It found that thickening extremely detrimental resistive switching (RS) parameters such as endurance and uniformity current-voltage characteristics. interfacial causes growth nano stalagmite in yttria layer. This also responsible origin pseudo bipolarity RS...
An analytical study has been carried out to obtain the device performance parameters of InGaN/GaN-based multiple quantum well solar cell (MQWSC). Significant improvements are made upon preexisting models reported in literature for predicting matrix MQWSC. The American Society Testing and Materials (ASTM) standards data sheets utilized attaining photon flux density instead blackbody radiation formula. Furthermore, is evaluate MQWSC bulk p-i-n cell. Results suggest that by incorporating QWs...
Direct two-dimensional (2D) material growth is widely considered as the preferred 2D integration approach due to its simplicity and cost-effective fabrication flow. On other hand, a transfer route enables full wafer-scale of epitaxial can facilitate new device possibilities. However, wafer size atomically thick from often seems an impossible hurdle overcome, since strongly influenced by strain surroundings. Moreover, stability some these materials concern several are prone oxidation. Here,...
Here, an analytical model for dark current and photoresponsivity of ZnO-based thin film homojunction p-i-n ultraviolet (UV) photodetector (PD) is presented. This work provides a succinct insight about the effect reverse bias voltage, thickness variation on responsivity UV PDs based layers grown by dual ion beam sputtering. The results affirm that with increase in top p-type layer from 50 to 200 nm, peak reduces 41.9%, while i-ZnO 20 80 nm increases 108.6%. obtained outcome, vindicates...
This article reports the fabrication of a dual-ion beam sputtering (DIBS)-grown MgZnO/CdZnO (MCO)-based gateless heterostructure field-effect transistor (HFET). In addition, this presents that by introducing 30-nm yttria spacer layer, crystallinity CdZnO buffer layer can be enhanced and interface roughness at heterojunction MCO reduced. Furthermore, source drain metal contacts were optimized for least specific contact resistivity ( <inline-formula...
The prompt detection of aqueous pollutants, with both high speed and precision, holds great significance due to the substantial threats they impose on human well-being environment. Lead its derivatives exhibit a level toxicity, capable inducing various ailments. Nevertheless, existing lead systems are suffered from several drawbacks, including sluggish response times, elevated cost, lack mobility. Here, sensor for highly sensitive, selective, rapid trace amount toxic (Pb <inline-formula...
From the last decade, development of a generic model for memristive systems which simulates biologically inspired nervous system living beings, is one most attracting aspects. More specifically, develop has capability to resolve problems in field artificial neural network. Here, generic, non-linear analytical model, based on interfacial switching mechanism, been discussed. The proposed simulate high-density network biological synapses that regulates communication efficacy among neurons and...
Abstract This article analyzes the direct current and small-signal parameters of MgZnO/ZnO (MZO) HEMT for microwave application. Further, impact MgO spacer layer on performance such as transconductance ( g m ), cut-off frequency f T maximum oscillation max ) Johnson’s figures merit (J-FOM) MZO has been analyzed. with results in enhanced values two-dimensional electron gas (2DEG) density 7.2 × 10 13 cm −2 91 mS mm −1 . The exhibit 3-fold enhancement to 5.57 GHz 7.8 GHz, respectively, J-FOM is...