Pavel Štrichovanec

ORCID: 0000-0003-2971-902X
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Magnetic properties of thin films
  • Superconducting and THz Device Technology
  • Semiconductor Quantum Structures and Devices
  • Physics of Superconductivity and Magnetism
  • ZnO doping and properties
  • Magnetic and transport properties of perovskites and related materials
  • Theoretical and Computational Physics
  • Advanced Semiconductor Detectors and Materials
  • GaN-based semiconductor devices and materials
  • Optical Coatings and Gratings
  • Ion-surface interactions and analysis
  • Magnetic Properties and Applications
  • Metal and Thin Film Mechanics
  • Anodic Oxide Films and Nanostructures
  • Quantum Dots Synthesis And Properties
  • Metallic Glasses and Amorphous Alloys
  • Semiconductor materials and interfaces
  • Heusler alloys: electronic and magnetic properties
  • Multiferroics and related materials
  • Thermal Radiation and Cooling Technologies
  • Ferroelectric and Piezoelectric Materials
  • Advanced Materials Characterization Techniques
  • Magnetic Field Sensors Techniques
  • Copper Interconnects and Reliability
  • Chalcogenide Semiconductor Thin Films

Instituto de Nanociencia y Materiales de Aragón
2009-2025

Universidad de Zaragoza
2013-2025

Institut de Ciència de Materials de Barcelona
2018-2019

Slovak Academy of Sciences
2005-2007

Institute of Electrical Engineering of the Slovak Academy of Sciences
2006-2007

We study the origin of strong difference in resistivity focused‐electron‐ and focused‐Ga‐ion‐beam‐induced deposition (FEBID FIBID, resp.) Pt performed a dual beam equipment using as precursor gas. have in‐situ ex‐situ resistance measurements both types nanodeposits, finding that by FEBID is typically four orders magnitude higher than FIBID. In case FEBID, current‐versus‐voltage dependence nonlinear resistance‐versus‐temperature behavior strongly semiconducting, whereas FIBID shows linear...

10.1155/2009/936863 article EN cc-by Journal of Nanomaterials 2009-01-01

The crossover from antidot to dot magnetic behavior on arrays patterned in a ferromagnetic thin film has been achieved by modifying only the geometry. A series of fabricated cobalt with fixed diameter $d$ and reducing period array $p$ $p\ensuremath{\gg}\phantom{\rule{4pt}{0ex}}d$ $p<d$. dramatic change coercivity dependence $p$, correlated significant modification domain structure observed x-ray photoemission electron microscopy, evidences crossover. An intermediate regime found between...

10.1103/physrevb.89.144405 article EN Physical Review B 2014-04-04

The dynamic magnetic properties of full Heusler alloy thin films Co2FeGe, grown on MgO (001) substrates under different thermal conditions, were investigated. Brillouin light scattering and ferromagnetic resonance measurements revealed that depositing at room temperature followed by annealing 300 °C for 1 h produces the best results maximizing magnetization, exchange stiffness, minimizing spin-dynamic dissipation in films, which are desirable characteristics high-speed spintronic devices....

10.1063/5.0255241 article EN cc-by Journal of Applied Physics 2025-03-25

Granular multilayers [Fe(tnm)∕MgO(3nm)]N with 0.4nm⩽t⩽1.5nm were prepared by sequential pulsed laser deposition. Transmission electron microscopy (TEM) images show that increasing t causes the growth of sizes Fe nanoparticles and broadening particle size distribution. For t&amp;gt;0.81nm, continuous layers are formed. The evolution shapes particles is reflected in magnetic properties investigated films. A crossover from superparamagnetic to ferromagnetic behavior upon formation a layer...

10.1063/1.3093945 article EN Journal of Applied Physics 2009-03-15

We have investigated the transport and magnetotransport properties in Fe/MgO multilayers around Fe percolation threshold as a function of temperature nominal thickness iron layer (t). Electrical resistivity measurements allowed us to disclose charge mechanisms involved, which are closely related degree discontinuity layers. The samples with below (t∼0.8 nm) exhibit isotropic magnetoresistance (MR), can be understood considering spin-polarized electron tunneling between nanometer-sized,...

10.1063/1.3298504 article EN Journal of Applied Physics 2010-02-01

The perovskite (Sr,Ba)MnO 3 system is an ideal candidate for tailoring electrical and magnetoelectric properties through the accurate control of Ba content epitaxial strain due to strong coupling between polar instability, spin order, lattice. Here, first, order proved be induced in Sr 1− x MnO thin films lattice expansion either by or chemical pressure, which correlates with evolution dielectric properties. Second, spin–phonon coupling, a large response found system, constant drops up 50%...

10.1002/admi.201601040 article EN Advanced Materials Interfaces 2017-02-24

The evolution of the morphology, magnetic and transport properties Fe(t nm)/MgO(3.0 nm) multilayers with respect to nominal metallic layer thickness was investigated. A comparison existing experimental data on discontinuous metal–insulator multilayers, ultrathin epitaxial Fe films MgO substrates granular cermet is made. It confirmed that deposition conditions material composition play a crucial role in percolation process. Nominal thicknesses layers at which an infinite cluster formed for...

10.1088/0953-8984/22/5/056003 article EN Journal of Physics Condensed Matter 2010-01-15

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static dynamic magnetic properties were systematically studied. It is shown that elevated TS promote formation ordered L21 crystal structure. Variation allow modification in a broad range. Saturation magnetization ~920 emu/cm3 low damping parameter α ~ 0.004 achieved for...

10.3390/nano11051229 article EN cc-by Nanomaterials 2021-05-07

Epitaxial discontinuous Fe/MgO multilayers have been grown by pulsed laser deposition on MgO(001) single-crystal substrates. The with 0.6 nm nominal Fe layers thickness are superparamagnetic and demonstrate tunneling magnetoresistance (TMR) in the current-in-plane configuration. Increasing temperature causes an improvement crystal quality is accompanied higher TMR ratios. maximum value (9.2% at room 18 kOe magnetic field) trebles that of polycrystalline samples deposited simultaneously glass...

10.1063/1.3569149 article EN Applied Physics Letters 2011-03-21

(Co(0.4 nm)/Pt(0.7 nm)) x (x = 10, 20, 30) multilayer antidot thin films (films with arrays of nanoholes) have been grown by dc sputtering onto self-assembled pores anodic alumina membranes a tailored diameter and fixed inter-hole distance. The magnetic behavior has quantified vibrating sample magnetometry, the surface magnetization patterns imaged force microscopy. reversal mechanism is characterized two steps depending on film thickness diameter. These are ascribed to nucleation...

10.1088/1361-6463/aa4ee3 article EN Journal of Physics D Applied Physics 2017-01-12

In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning 80 μm-diameter spot along their top surface a controlled way. The annealing process was optimised terms fluence achieve complete HZO into non-monoclinic polymorph, as demonstrated X-ray diffraction transmission electron...

10.1016/j.apmt.2023.102033 article EN cc-by Applied Materials Today 2023-12-23

We report on the development of Mo/Au based transition edge sensors (TESs) aimed at soft X-ray detection. TESs different sizes with T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ~ 100 mK and very narrow transitions have been fabricated. Dark characterization I-V, complex impedance, noise measurements has allowed us to obtain their basic functional parameters bath temperatures operating points. Electrodeposited Bi films, be used as...

10.1109/tasc.2016.2637337 article EN IEEE Transactions on Applied Superconductivity 2016-12-19

We report on the sensitivity of superconducting transition temperature (Tc) to individual layers' thickness in Mo/Au proximity bilayers be used transition-edge sensors (TESs). The achieved good reproducibility and quality allow a clear determination critical Tc as function Mo Au thicknesses. One objective this work is analyse interface assess possible effects double layer we use fabricate these TESs based them. Experimental data are analysed basis Usadel equations using model developed by...

10.1109/tasc.2019.2903994 article EN IEEE Transactions on Applied Superconductivity 2019-03-18

We have performed an experimental study on the influence of a ferromagnetic continuous film in magnetization reversal processes discrete submicrometric antidot arrays fabricated it. In order to compare magnetic properties, two sets been over cobalt thin film: embedded film, and isolated by trench surrounding array. X-ray photoemission electron microscopy images virgin state show same domain distribution both samples, finding no evidence any effect film. This result is supported hysteresis...

10.1166/jnn.2012.6537 article EN Journal of Nanoscience and Nanotechnology 2012-09-01

The R(T,I) shape of the superconducting transition in Transition Edge Sensors (TES) is crucial importance to determine their ultimate performance.This paper reports a study temperature and current dependences Mo/Au TESs, focused on low resistance region, where these devices preferentially operate.A large broadening observed when increasing applied current.An empirical analytic expression for found, which describes with different critical temperatures, from R=0 up at least 30% Rn (in some...

10.1088/1361-6668/aaebf4 article EN Superconductor Science and Technology 2018-10-26

We studied the possibility to prepare a multi quantum well (MQW) structure on non-planar wet-etched object patterned in (100) GaAs semi-insulating substrate with aim develop QWIP new normal incidence geometry. A H3PO4-based etching solution was used pattern through strip mask pattern. This yielded 20 µm-deep [0-11]-oriented ridges good sidewall surface morphology, which characterized by scanning electron microscopy (SEM) and atomic force (AFM). The objects were MOCVD (Metalorganic Chemical...

10.1002/pssc.200460462 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2005-03-01

Abstract Composition uniformity of InGaP thick epitaxial layers grown on InGaP/GaP graded buffer structure was studied by stepwise wet chemical etching and low temperature photoluminescence. We compared properties two MOCVD technique different buffers. Influence strain growth condition the both layer related to design. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

10.1002/pssc.200674131 article EN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 2007-03-28
Coming Soon ...