A5073599896- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Metal and Thin Film Mechanics
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Copper Interconnects and Reliability
- ZnO doping and properties
- nanoparticles nucleation surface interactions
- Thin-Film Transistor Technologies
- Aluminum Alloys Composites Properties
- Advanced Semiconductor Detectors and Materials
- Copper-based nanomaterials and applications
- Plasma Diagnostics and Applications
- Electromagnetic Compatibility and Noise Suppression
- Advanced Chemical Physics Studies
- Electronic and Structural Properties of Oxides
- Induction Heating and Inverter Technology
- Solidification and crystal growth phenomena
- Advanced ceramic materials synthesis
- Optical properties and cooling technologies in crystalline materials
Leibniz Institute for Crystal Growth
2009-2019
Forschungsverbund Berlin
1994-2018
We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) orientations with ultimate goal to fabricate large area (up 2 inch) controlled number of monolayers spatial uniformity. To reach objectives we using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial is characterized by ARPES, LEEM Raman spectroscopy. Theoretical studies employed get better insight patterns stability. Reproducible...
Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on β-Ga2O3 (100) using an intermediate low-temperature buffer layer formed in situ NH3 treatment of substrate. A simple for self-separation bulk from the substrate is reported. The structural properties and GaN–β-Ga2O3 interface were investigated high-resolution X-ray diffraction electron microscopy techniques. layers deposited gallium cyanide as transport agent and, source nitrogen. these are compared with those samples sapphire.
Abstract Starting with a historical review and general comparison of growth methods, the paper deals seeded vapour substrate‐quality ZnSe crystals. Under optimized conditions, in contrast to from melt, SPVT SCVT (seeded physical chemical transport) twin‐free single crystals are prepared. The dislocation density decreases down ≈10 4 cm −2 direction away seed transition region. SPVT‐grown better ones respect optical properties showing exciton luminescence decreasing deep level emission. For...
High-quality 400 µm thick GaN has been grown by hydride vapour phase epitaxy (HVPE) on (0 0 1) sapphire with a 2 AlN buffer layer. The material's crystalline quality and homogeneity was verified x-ray diffraction (XRD), low-temperature photoluminesence (LT-PL) LT cathodoluminescence. Plan-view transmission electron microscopy images reveal low dislocation density of ∼1.25 × 107 cm−2. residual stress the material studied two complementary techniques. LT-PL spectra show main neutral donor...
High-quality (001) ZnSe substrates grown by the seeded chemical vapour transport method have been used for homoepitaxial growth molecular beam epitaxy (MBE). Special attention is paid to mechanically untreated as-grown surfaces and a novel thermal etching procedure suitable MBE substrate preparation proposed. The layers exhibit excellent optical structural quality confirmed low-temperature photoluminescence measurements high-resolution x-ray diffraction. Light-emitting diodes (LEDs) with...
Abstract In this study we employ a new method for growth of carbon‐doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with thicknesses from 10 to 100 μm and up 19 mm in size were grown gallium melt ammonia as feeding materials carbon‐containing equipment. The properties characterized low‐temperature photoluminescence (LTPL), High‐Resolution X‐ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS)...
Abstract The Al‐polar surfaces of AlN wafers cut from physical vapor transport grown crystals were lapped and polished. Polishing procedures developed to produce for epitaxial growth. surface scratches subsurface damage caused by mechanical polishing removed a final chemical (CMP) process, which yielded perfect ready After CMP the average root mean square roughness on 5 µm × area was 0.1 nm. Characterization polished electron back scatter diffraction cathodoluminescence showed no damage....
Abstract Thick GaN layers were deposited by the reaction of gallium with ammonia. The Physical Vapour Transport (PVT) process NH 3 addition is characterized moderate flow rates, pressures, and consumption reactants, reduced parasitic growth no 4 Cl formation. Carbon to ammonia results in thicker at increased transport rate single crystals even Ga super saturations, which would normally be too high for crystalline growth. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)