The relationship between bonding wire liftoff and terminal voltage in insulated gate bipolar transistor (IGBT) power module is studied. Bonding failure one of the most dominant limiting factors to reliability behavior IGBT module. In this paper, order monitor type fault, effects typical degradations are considered. parasitic inductance equivalent capacitance change due liftoff, which have different impacts on external characteristics. So, two aspects characteristics investigated identify any...

The void in the solder layer is one of most important aging forms insulated-gate bipolar transistor (IGBT) module. In this article, influence mechanism different fractions on thermal conductivity and specific heat capacity studied. An improved Cauer model considering damage established, its parameter extraction method proposed. addition, temperature dependence discussed article. order to facilitate experimental study layer, we customized IGBT modules with fractions. morphology properties...

Non-intrusive load monitoring (NILM) is an important research direction and development goal on the distribution side of smart grid, which can significantly improve timeliness demand response users’ awareness load. Due to rapid development, deep learning becomes effective way optimize NILM. In this paper, we propose a novel identification method based long short term memory (LSTM) learning. Sequence-to-point (seq2point) introduced into LSTM. The innovative combination LSTM seq2point brings...

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both temperature influence on extraction of parameters and errors caused by physical structure. In terms prediction transient junction steady-state temperature, conventional are modified, general estimating is studied using adaptive model. The results show that estimated our more accurate than

A model for the online estimation of junction temperature based on gate pre-threshold voltage in high-power insulated-gate bipolar transistors (IGBTs) was proposed. First, turn-on behavior and dependence gate-emitter during delay period were studied. It revealed that waveform exhibits a point inflection after which between emitter increases significantly; at this point, relationship changes from positive correlation to negative correlation. Meanwhile, analyses basis semiconductor physics is...

This article describes an improved behavior model for IGBT modules. The new steady-state characteristic of the with a correction function was built to improve saturation current different gate-emitter voltages. Two important nonlinear capacitances were described by two continuous functions solve convergence problem in circuit simulation. parasitic parameters generated package extracted impedance measurement. All are derived from datasheet and implemented MAST language SABER A double-pulse...

Bond wire failure is a common that seriously affects the reliability of insulated-gate bipolar transistor (IGBT) modules. Real-time health monitoring for bond wires very important to avoid catastrophic failures. In this article, we introduce new method in IGBT modules based on voltage ringing characteristics. We applied double pulse circuit generate IGBTs and freewheeling diodes (FWDs) during turn off reverse recovery phases. To monitor failure, theoretically experimentally validated...

Insulated gate bipolar transistors (IGBTs) are widely used in new energy fields, such as wind power converters and electric vehicles. The junction temperature characteristics measurements greatly influence the reliability of IGBT. During switching, electrical parameters IGBT undergo considerable change. thermo sensitive parameter (TSEP) method has been commonly to extract temperature. TSEP inherent advantages being able take quickly accurately, a non-intrusive manner. estimate under on-state...

Silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) has become a promising device due to its excellent material properties. Junction temperature is an important parameter and significant health index. In this article, drain current during turn-on transient taken as the thermo-sensitive electrical (TSEP) monitor junction of SiC MOSFET. Based on physical properties wide bandgap semiconductor materials, switching behaviors MOSFET variation with were studied. The...

Bond wire aging is a universal failure form of silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) module. Real-time condition monitoring bond an important guarantee for the stable operation power electronics system. In this article, method state in SiC MOSFET module using on-state drain-source voltage (OSDSV) separation technique proposed. Firstly, temperature dependence conduction circuit resistance from drain terminal to source analyzed obtain characteristics...

Gate oxide degradation can reduce the reliability of silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET), which is indicated by bias temperature instability (BTI). BTI-induced threshold voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\text th</sub> ) shift has an effect on ON-resistance R DS - ON</sub> and leakage current. Meanwhile, rising junction T xmlns:xlink="http://www.w3.org/1999/xlink">j</sub>...

Condition monitoring power semiconductor devices can inform converter maintenance and reduce damage. This paper presents a method to monitor bond-wire failure in IGBT module by detecting the change of its exterior electrical signals. It is shown that gate-emitter voltage V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GE</inf> , saturated collector-emitter xmlns:xlink="http://www.w3.org/1999/xlink">CE(sat)</inf>...

With the development of high power converters, safe operation large IGBT modules with parallel chips is increasing importance. In a multichip module, uneven solder layer degradation translates into higher thermal resistance for some chips, leading to junction temperature differences between them. However, specific meaning virtual extracted from any external electric characteristic parameter module not yet clear. This paper studies physical meanings temperatures estimated by threshold voltage...

A parameter self-correcting thermal network model is proposed in this paper, and then the accurate junction temperature of IGBT solder layer after aging calculated. Considering that voids cracks generated by module affect parasitic capacitance common mode interference signal power supply circuit which it located, can be monitored for state layer. When aging, resistance capacity are calculated based on common-mode signal, modified to calculate exact temperature. The major advantage method...

The solubilties of potassium chloride and sulfate in aqueous glycerol solutions have been measured at temperatures ranging from (289 to 349) K using a dynamic method. solute-free mass fractions range 0.0000 0.8001. solubilities KCl K2SO4 increased with temperature decreased addition glycerol. experimental data were correlated the electrolyte nonrandom two liquid (E-NRTL) model. binary interaction parameters E-NRTL model obtained simultaneously solubility ternary systems. calculated...