The phenomenon of age hardening could be evidenced in thin film applications. A model system, Ti1−xAlxN was chosen as such coatings are known for their excellent wear resistance enabling improved machining processes like high-speed and dry cutting. Here, we show unambiguously that metastable initially undergo spinodal decomposition into coherent cubic-phase nanometer-size domains, causing an increase hardness at elevated temperatures. These intermediate domains transform stable phases TiN...

An experimentally verified useful new model for reactive sputtering is presented. By considering the total system (target erosion, gas injection, chamber wall deposition, gettering at all surfaces, etc.) during deposition it possible to evaluate quite simple relationships between processing parameters. We have expanded earlier treatments include these phenomena. The involves that of takes place target and walls opposite target. Arguments are also presented how sputtered materials (elemental...

The electrical, optical, and mechanical properties of a compound film depend strongly on the composition film. Therefore, it is interesting to study wide variety compositions many new materials. Reactive sputtering widely used technique produce thin films. With this possible fabricate films with different compositions. However, has not yet, any great extent, been predict sputtered In article we will present model that enables us both rate during reactive sputtering. results point out there...

Reactive sputtering is a very complex and nonlinear process. There are many parameters involved. Normally it not possible to vary single parameter independently of the others. It therefore difficult characterize process based on experimental observations. A better understanding reactive mechanism needed. We have suggested simple model for This primarily well-known gas kinetics, transferred this application. With theoretically predict different processing conditions actually study influence...

Reactive sputtering is an attractive method for preparing compound films like nitrides and oxides. However, one drawback that the process often switches between metal mode mode. This means it very difficult to obtain with intermediate composition. In a recently presented model reactive we have been able predict most observed effects including hysteresis effect. this paper investigated effect of pumping speed on nonstable transition region. We show that, if high enough, there smooth different...

Abstract The ability of 27 algae belonging to 11 taxonomic divisions grow at the expense organic nitrogen was tested in axenic culture. Experiments were carried out buffered media: morpholine propanesulphonic acid (MOPS) used successfully for all fresh water strains except diatoms. It not as a source by any strain examined but served good sulphur four strains. range substrates extensive and included amino acids, urea, acetamide, urate some nucleosides. Growth rates varied widely growth...

The formation of cubic-phase SiNx is demonstrated in TiN∕SiNx multilayers deposited by reactive dual magnetron sputtering. Transmission electron microscopy examination shows a transition from epitaxially stabilized growth crystalline to amorphous as the layer thickness increases 0.3to0.8nm. observations are supported ab initio calculations on different polytypes, which show that NaCl structure has best lattice match TiN. Calculations also reveal large difference elastic shear modulus between...

It is well known in reactive sputtering that the deposition rate generally drops drastically at a high enough partial pressure level of active gas to form compound on target surface. At point where drops, there exists simple relationship between consumed nitrogen and stoichiometric films. This abrupt decrease can be measured indirectly by monitoring processing mass spectroscopy (MS) studying discharge optical emission (OES). We have shown it possible select desired simply choosing correct...

Chemical vapor deposition (CVD) of Ti(C,N) from a reaction gas mixture TiCl4, CH3CN, H2 and N2 was investigated with respect to phase composition kinetics. The modelled by thermodynamic calculations the growth rate CVD process measured when replacing for while sum partial pressures + kept constant. N2/H2 molar ratio varied 0 19. Single crystal c-sapphire used as substrates. It found that low ratios (N2/H2 below 0.6) lead an increased up 22%, compared without added N2. mechanism responsible...

The growth of chemical vapor deposited TiN from a reaction gas mixture TiCl4, N2 and H2 was investigated on three different transition metal substrates: Fe, Co Ni at deposition temperatures ranging 850 °C to 950 °C. interactions between the substrate metals phase were using thermodynamic calculations. coatings characterized by scanning electron microscopy, transmission X-ray diffraction, energy dispersive spectroscopy Kikuchi diffraction. Chemical (CVD) substrates resulted in dense, columnar...

Different approaches are used in tailoring properties of thin films to meet requirements for specific applications. This study comprises work done on atomic layer deposition (ALD) AlxTi1-xN employing the co-evaporation approach using tris-dimethylamido aluminum (TDMAA, Al(NMe2)3) and tetrakis(dimethylamido)titanium(IV) (TDMAT, Ti(NMe2)4), ammonia (NH3) plasma. High Al-content, low impurity (O C, both <5 at.%) with uniform grain size distribution dense morphology were deposited. The...

Different approaches are used in tailoring properties of thin films to meet requirements for specific applications. This study comprises work done on atomic layer deposition (ALD) AlxTi1-xN employing the co-evaporation approach using tris-dimethylamido aluminum (TDMAA, Al(NMe2)3) and tetrakis(dimethylamido)titanium(IV) (TDMAT, Ti(NMe2)4), ammonia (NH3) plasma. High Al-content, low impurity (O C, both <5 at.%) with uniform grain size distribution dense morphology were deposited. The...

Different approaches are used in tailoring properties of thin films to meet the requirements specific applications. This study comprises work done on atomic layer deposition AlxTi1−xN employing co-evaporation approach using tris-dimethylamido aluminum [Al(NMe2)3], tetrakis(dimethylamido)titanium (IV) [Ti(NMe2)4], and ammonia (NH3) plasma. High Al-content, low impurity (O C, both <5 at. %) with uniform grain size distribution dense morphology were deposited. The as-deposited x-ray...

Two Ti(C,N) coatings were tested by means of micro abrasion and scratch testing. The differed in grain size, orientation (<111> <111>, <311> <211> respectively) hardness (36 GPa 23 respectively). <111> oriented coating had a 20% higher wear resistance compared to the reference when abraded with 1 μm diamonds. When 6 diamonds was superior 36%. Furthermore, it found that 35% better adhesion reference. improved mechanical properties attributed high degree hardness.

Aluminum nitride (AlN) is a semiconductor with very wide band gap and potential dielectric material. Deposition of thin AlN films routinely done by several techniques, including atomic layer deposition (ALD). In this study, we deposited using ALD trimethylaluminum (TMA) as the Al precursor ammonia (NH3) without plasma activation N in temperature range from 100 to 400 °C while monitoring surface reactions mass spectrometry. Our results, combined recent quantum chemical modelling, suggest that...

The corrosion behaviour of Titanium carbonitride (Ti(C,N)) films grown by chemical vapour deposition was analysed in artificial sea water environment. From potentiodynamic polarisation curves, two passivation zones were detected, which originated from an initial oxidation TiC and TiN to TiO2 followed growth the layer upon increased polarisation. X-ray photoelectron spectroscopy analyses verified mechanism detecting a gradual decrease Ti(C,N) peaks accompanied increase oxidised Ti (e.g....