A5102812665- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Solid State Laser Technologies
- Photonic and Optical Devices
- Laser-Matter Interactions and Applications
- Software Engineering Research
- Semiconductor materials and devices
- Software Testing and Debugging Techniques
- Photonic Crystal and Fiber Optics
- Model-Driven Software Engineering Techniques
- Software Reliability and Analysis Research
- Advanced Software Engineering Methodologies
- Photonic Crystals and Applications
- Software System Performance and Reliability
- Optical Network Technologies
- Service-Oriented Architecture and Web Services
- Laser Design and Applications
- Molecular Junctions and Nanostructures
- Software Engineering Techniques and Practices
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Business Process Modeling and Analysis
- Photorefractive and Nonlinear Optics
- Analytical Chemistry and Sensors
Software Competence Center Hagenberg (Austria)
2015-2024
Solvay (Canada)
2017-2018
Friedrich-Alexander-Universität Erlangen-Nürnberg
1999-2017
Regional Municipality of Niagara
2015
IBM (United States)
1991-2010
The University of Sydney
2009
Norwegian University of Science and Technology
2008
Australian Centre for Robotic Vision
2007
Vienna University of Economics and Business
2006
École Polytechnique Fédérale de Lausanne
1996-2005
The use of a saturable absorber as passive mode locker in solid-state laser can introduce tendency for Q-switched mode-locked operation. We have investigated the transition between regimes cw locking and locking. Experimental data from Nd:YLF lasers picosecond domain soliton Nd:glass femtosecond domain, both passively locked with semiconductor mirrors, were compared predictions an analytical model. observed stability limits agree well previously described model, while we developed extended...
We present a model for passively Q-switched microchip lasers and derive simple equations the pulse width, repetition rate, energy. experimentally verified validity of by systematically varying relevant device parameters. used to practical design guidelines realizing operation parameters that can be varied in large ranges adoption semiconductor saturable-absorber mirror choice appropriate gain medium. Applying these guidelines, we obtained 37-ps pulses, which our knowledge are shortest pulses...
We demonstrate a power-scalable concept for high-power all-solid-state femtosecond lasers, based on passive mode locking of Yb:YAG thin disk lasers with semiconductor saturable-absorber mirrors. obtained 16.2 W average output power in pulses 730-fs duration, 0.47-muJ pulse energy, and 560-kW peak power. This is to our knowledge the highest reported laser oscillator subpicosecond regime. Single-pass frequency doubling through 5-mm-long lithium triborate crystal (LBO) yields 8-W 515-nm radiation.
Electrolytes of a room temperature ionic liquid (RTIL), trimethyl(isobutyl)phosphonium (P111i4) bis(fluorosulfonyl)imide (FSI) with wide range lithium (LiFSI) salt concentrations (up to 3.8 mol kg(-1) in the RTIL) were characterised using combination techniques including viscosity, conductivity, differential scanning calorimetry (DSC), electrochemical impedance spectroscopy (EIS), nuclear magnetic resonance (NMR) and cyclic voltammetry (CV). We show that FSI-based electrolyte containing high...
The chemical composition of the solid electrolyte interphase (SEI) layer formed on surface lithium metal electrodes cycled in phosphonium bis(fluorosulfonyl)imide ionic liquid (IL) electrolytes are characterized by magic angle spinning nuclear magnetic resonance (MAS NMR), X-ray photoelectron spectroscopy (XPS), fourier transformed infrared spectroscopy, and electrochemical impedance spectroscopy. A multiphase layered structure is revealed, which shown to remain relatively unchanged during...
In this study the performance of lithium (Li) anode is characterized in two alternative ionic liquid electrolytes: (i) a solution 0.5 mol·kg–1 bis(fluorosulfonyl)imide (LiFSI) trimethyl(isobutyl)phosphonium FSI (P111i4FSI) and (ii) an equimolar mixture these salts, effectively inorganic–organic IL. We have investigated formation solid electrolyte interphase (SEI) at electrode its influence on polarization potential, surface impedance deposition morphologies. Lithium metal cycling revealed to...
Diode-pumped Yb:phosphate and Yb:silicate glass lasers have been passively mode locked for the first time to authors' knowledge. Reliable self-starting locking without critical cavity alignment has achieved with intracavity semiconductor saturable-absorber mirrors soliton locking. We generated pulses as short 58 fs laser 61 at average output powers of 65 53 mW, respectively. The pulse repetition rate was 112 MHz. Additionally, we demonstrated tunability femtosecond from 1025 1065 nm 1030...
We passively Q switched a diode-pumped Nd:YVO4 microchip crystal with an antiresonant Fabry-Perot saturable absorber and achieved single-frequency pulses as short 56 ps. can vary the pulse width from ps to 30 ns repetition rate 27 kHz up 7 MHz by changing design parameters of pump power.
We demonstrate 60-fs pulses with an average output power of 84 mW from a diode-pumped Nd:glass laser mode locked by low-finesse antiresonant Fabry–Perot saturable absorber (A-FPSA). The mode-locked spectrum spreads over most the available fluorescence bandwidth. At increased pulse energy fluence or decreased negative group-velocity dispersion, multiple pulsing was observed. experimentally characterize this behavior, which can be explained saturation behavior A-FPSA and limited gain These...
We present a comprehensive study on multigigahertz repetition rate Nd:YVO/sub 4/ lasers, passively mode-locked with semiconductor saturable absorber mirrors. A brief review of Q-switching instabilities special emphasis high is given. then basic design guidelines, and experimentally show that one can push the pulse Nd: YVO/sub laser up to 157 GHz, reaching fundamental limit which given by duration thus amplification bandwidth. also demonstrate an air-cooled diode-pumped 10-GHz 2.1-W average...
Using time-resolved photoluminescence, we have examined the photoluminescence (PL) decay time of ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{In}}_{\mathit{y}}$P/(${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${)}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{In}}_{\mathit{y}}$P single quantum wells with various well widths and different Al content in barriers. At low temperatures, find an increase lifetime increasing temperature good...
We report on self-starting passively mode-locked diode-pumped 1.3-microm lasers obtained by use of semiconductor saturable absorbers. achieved pulses as short 4.6 ps in Nd:YVO(4) and 5.7 Nd:YLF with average output powers 50 130 mW, respectively.
A molecular-beam-epitaxy-grown semiconductor saturable absorber mirror with integrated dispersion compensation, based on a Gires–Tournois structure, is demonstrated. This dispersion-compensating generated 160-fs pulses 25-mW average power from simple diode-pumped Cr:LiSrAlF6 laser without any additional compensation.
Introduction Sports federations are increasingly inclined to support their member clubs' structural and organisational development (Schlesinger et al., 2021). Thus, offer tools training courses have started implementing advisory programs supporting voluntary sports (VSCs') strategic alignment action (cf. Klenk 2017). However, the effectiveness of external guidance can be limited due level autonomy independence that VSCs typically show (Nagel & Schlesinger, 2012; Schlesinger While...
The excitation and decay mechanisms of the Yb3+ intra-4f-shell emission are studied in n-type MOVPE-grown p-type LPE grown InP:Yb layers by photoconductivity measurements, time-resolved photoluminescence, photoluminescence spectroscopy. Assuming a pseudo-donor or pseudo-acceptor-like character isoelectronic Td centre temperature dependences 4f-shell transition intensity lifetime can be consistently explained. Models for processes proposed.
Using a 15 nm-thick antireflection-coated GaAs absorber layer on an AlGaAs/AlAs Bragg mirror as nonlinear reflector, we achieved self-starting passive modelocking of Ti-sapphire laser with 34 fs pulses without Kerr lens modelocking.
The thickness and position of an oxide layer inside a vertical-cavity surface-emitting laser structure have been optimized for minimum optical scattering loss. In the resulting structure, index guiding provided by aperture is very small. Consequently, radius <2 μm, mode only weakly confined. devices using such small apertures, formation thermal lens has strong influence on guiding. leads to lower threshold currents increased differential efficiency with continuous wave as compared...