Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up 200 nW.μm -2 in p+nn+ silicon avalanche-based LEDs a 0.35-μm RF bipolar process. The spectral range is from 600- 850-nm wavelength region. Best performance are 600-nW vertical emission 3-μm square active area at 10 V 1 mA (200 nW.um-2). achieved emitted optical intensity about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has...

In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon emitting devices (Si-LEDs) could be designed and realized utilizing standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from three-terminal MOS-like structure is observed, with approach carrier energy momentum engineering design. Because Si-LEDs, waveguides, photodetectors (Si) can on single chip,...

This paper investigates the possibility of implementing SiGe Hetero-junction bipolar Photo-Transistor (HPT) within low cost and power consumption Radio-over-Fiber (RoF) systems based on standard single mode fiber (SSMF) operating in first optical window for wireless communication networks scenarios. The HPT under study has potential lower compared to PIN photo-detectors as it is fabricated through consolidated transistor process technologies, allowing possible integration with Si-based...

Micron dimensioned on-chip optical links of 50 micron length, utilizing 650 – 850 nm propagation wavelength, have been realized in a Si Ge bipolar process. Key design strategies is the utilization high speed avalanche based light emitting devices (Si Av LEds) combination with silicon nitride wave guides and speeds detectors. The source, waveguide detector were all integrated on same chip. TEOS densification state art Si-Ge technology further used as key strategies. Best performances show up...

The combination of the 850nm VCSEL as optical source and Standard Single Mode Fiber channel realizes an attractive solution for distribution wireless signal through Radio over technique. Potential causes impairment which are however present in this analyzed, some conditions to be respected view application these systems various scenarios then identified.

Various short-range optical connections, transmitting either high-bit-rate digital signals or radio frequency analog signals, can exploit 850-nm vertical-cavity surface-emitting lasers as source together with the standard single-mode fiber (SSMF) channel. This solution presents attractive features in terms of reduced cost and energy consumption. However, bandwidth reduction due to intermodal dispersion undesired fluctuations received signal modal noise are present this case. Such effects...

We present a study of full area emitter phototransistors with different optical window sizes implemented in SiGe Bipolar technology. Extracted responsivity 3.5 A/W and an opto-microwave cut-off frequency 739 MHz were observed.

A 10 × μm 2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz transistors (HBT). Its technology and structure are first briefly described. optimal opto-microwave dynamic performance then analyzed versus voltage biasing conditions for continuous wave measurements. The points chosen in order to maximize the optical transition frequency (f Topt ) responsivity HPT. An scanning near-field microscopy (OM-SNOM) performed these...

The influence of the lateral scaling such as emitter width and length on frequency behavior SiGe bipolar transistor is experimentally studied. Electrical transistors different sizes are designed fabricated by using a commercial technology. effect peripheral current collector spreading electrical performances analyzed in regards to state art. Furthermore, phototransistor opto-microwave impact flow photo-generated carriers toward optical opening structure investigated. Moreover, 2-D carrier...

Theintrinsic frequency response of Silicon-Germanium Heterojunction bipolar Photo-Transistors (HPT) at 850nm is studied to be implemented in multimode fiber systems.The experimental analysis an HPT with optical window size 10x10µm 2 presented.An Opto-Microwave Scanning Near-Field Optical Microscopy (OM-SNOM) performed observe the variation dynamic behavior versus illumination location phototransistor.The photocurrent generated by photodiode interface between n++ sub-collector and p+ guard...

Graded junction, carrier energy and momentum engineering concepts have been utilized to realize a high intensity 100 nW 5GHz Silicon Avalanche based LED (Si Av LED). A silicon 0.35 micron RF bi-polar process was used as design processing technology. Particularly, the distributions were modeled in graded junction p+-i-n structures, increase optical yield. Best performance are up 750nW emission 7 square active area at 10 V 1mA. The device show 5 GHz modulation bandwidth. spectral range is from...

Ultra-low-loss optical coupling between photonic circuits and components is crucial in many applications such as quantum computing, sensing communications. This letter presents the thermal stability of a SU-8 based taper interconnect by characterizing its efficiency (CE) structural robustness after exposure to elevated temperatures. The heated from 280 °C 400 for duration 1 min 120 min. experimental results reveal that CE loss linear with high temperature, while relation temperature adheres...

This paper introduces and defines a novel complete set of optical-microwave (OM) quantities to analyze radio-overfiber (RoF) systems. Our approach the equivalent optomicrowave power, gain, noise figure (NF), 1-dB compression point third-harmonic intermodulation product (OM-P1dB, OM-IP3), spurious-free dynamic range (SFDR), error-vector magnitude (EVM) expressed in OM domain. These figures merits are defined at component level for each device RoF link with practical illustration transmission...

To decrease cost and consumption of future wireless infrastructures, radio‐over fibre systems utilising 850 nm vertical cavity surface emitting lasers standard single‐mode (SSMF) are deserving particular attention in replacing the typical use graded‐index multimode (GI‐MMF). In present work, a characterisation noise non‐linearities these links is performed, followed by an estimation their impact on system dynamics quality received signal. This allows to show that very good similar...

This paper develops the fundamental figures of merit vertical cavity surface emitting laser (VCSEL) with goal to use them on Radio-over-Fiber (RoF) link study. Different analogue properties like frequency response, noise and spurious-free dynamic range (SDFR) were studied. Optical-Microwave quantities allowing express gain, factor, IP3 SFDR defined measured. work allows separate contribution from detector. The VCSEL tested presented at 5GHz 8mA: a 1 dB compression point +7.6dBm input; an...

The first edge illuminated SiGe phototransistor based on the available commercial SiGe/Si BiCMOS technology for a low‐cost detector or mixer in radio‐over‐fibre applications. Its and structure are described. Edge mapping of performances, so as to observe fastest highest sensitive areas structure, is performed. exhibits cutoff frequency 890 MHz low responsivity 0.45 A/W at 850 nm. This new provides double that top obtained using same technology.

This letter presents a new collective and passive thin-film 3D vertical optical coupling structure, which is fabricated based on SU-8 polymer. technology compensates for the alignment errors of present solutions. The structure collectively manufactured matrix small-sized photodiodes wafer level to vertically couple with single-mode fiber. proposed shows efficiency between 10-μm active area diameter photodetector fiber 94% 1-dB tolerance ±9 μm at 1550 nm. Its wafer-level mass-production...

This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. phototransistors were fabricated commercially available SiGe/Si bipolar technology. The performances based low‐ and high‐resistive are compared. phototransistor low‐resistivity (LR) provides a responsivity more than double compared to high‐resistivity that is by using same transistor LR exhibits low‐frequency up 1.35 A/W (at 50 MHz).

This paper describes a compact and low cost optically fed antenna for using as receiver in 5G cellular networks distributed systems. It compares the performance of two different topologies patch antennas tightly integrated with vertical-cavity surface-emitting lasers (VCSELs), without need an amplifier stage or matching circuit. Opto-microwave (OM) gain −21.5 dB at 5.15 GHz Microstrip (MPA), −24.2 4.8 Grounded Coplanar (GCPA) are achieved. The MPA architecture is quite original it removes RF...

A collective and passive thin-film vertical-taper technology is shown to efficiently couple 850 nm VCSEL MMF at the wafer-level. 95% coupling efficiency ±20 μm FWHM tolerance misalignment are demonstrated, bringing potential industrialization in high-volume markets.

A Multi-channel LTE transmission on a Radio-over-Fibre (RoF) system realized with low cost and consumption 850nm Vertical Cavity Surface Emitting Laser (VCSEL) Standard Single Mode Fibre (SSMF) is proposed in the framework of wireless networks fronthaul links. The performances are evaluated through Error Vector Magnitude (EVM) comparing different distances, channels employed modulation formats using carrier aggregation nominal channel spacing for 20 MHz bandwidth signals. potentiality this...

This paper proposes an improved model for the nonlinear behavior of components Radio-over-Fiber (RoF) links focusing here on laser source. In a previous work, it was shown with flexible new opto-microwave design approach first behavioral RoF that exploited hyperbolic tangent function (the so-called <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tanh</i> model) to high-power nonlinearities. Since this not sufficient simulate adequately all...