A5101852763- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Membrane Separation Technologies
- Semiconductor materials and devices
- Polymer Surface Interaction Studies
- Microplastics and Plastic Pollution
- Marine Biology and Environmental Chemistry
- Diamond and Carbon-based Materials Research
- Lanthanide and Transition Metal Complexes
- Luminescence and Fluorescent Materials
- Inorganic Fluorides and Related Compounds
- Photonic Crystals and Applications
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Luminescence Properties of Advanced Materials
- Advanced Optical Sensing Technologies
- Recycling and Waste Management Techniques
- Acoustic Wave Resonator Technologies
- Ga2O3 and related materials
- Hydrogels: synthesis, properties, applications
- Electronic and Structural Properties of Oxides
- Polymer crystallization and properties
- Advanced Fiber Laser Technologies
- Carbon and Quantum Dots Applications
The University of Tokyo
2017-2024
Southwest Jiaotong University
2024
Tianjin University
2012-2021
Collaborative Innovation Center of Chemical Science and Engineering Tianjin
2016-2021
Collaborative Innovation Center of Quantum Matter
2019
Peking University
2019
University of Cambridge
2019
St Petersburg University
2017
Hefei University of Technology
2012-2014
Abstract Introducing solar energy into membrane filtration to decrease and chemicals consumption represents a promising direction in fields. In this study, kind of 0D/2D heterojunction is fabricated by depositing biomineralized titanium dioxide (TiO 2 ) nanoparticles with delaminated graphitic carbon nitride (g‐C 3 N 4 nanosheets, subsequently 2D heterostructure via intercalating g‐C @TiO heterojunctions adjacent graphene oxide (GO) nanosheets vacuum‐assisted self‐assembly process. Due the...
We present the design, fabrication, and detailed characterization of a photonic bullseye structure to enhance single-photon extraction efficiency from self-assembled GaN/AlN quantum dots (QDs) emitting in UV. Through measurements emission under saturated pulsed excitation at 80 MHz, we are able evaluate photon rates up ∼4.36 MHz into first element our NA = 0.4 objective lens. Such rate clearly exceeds theoretical maximum for an as-grown QD, far literature values GaN QDs measured similar...
We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy further isolated via the fabrication an array nanopillar structures. Detailed optical analysis characteristic emission spectrum is performed, main transmission shown to act as bright, stable, fast single-photon with wavelength ~400 nm.
We demonstrate high-purity single-photon emission from a high-quality and further confined InGaN (indium gallium nitride) quantum disc in GaN (gallium nanowire fabricated by an unconventional versatile reverse-reaction fabrication method. This structure exhibits with g(2)(0) value of 0.11 at 8 K sub-nanosecond radiative lifetime. The formation the using this approach overcomes many limitations conventional self-assembled III-nitride nanowires and, thus, strong potential application as source.
Autocorrelation measurements are used to reveal the spectral diffusion time scale in single photon emission of a GaN interface fluctuation quantum dot. Typical characteristic times such QDs revealed be nanosecond order. The excitation power dependence rate is also investigated, whereby an increase with increasing observed. This result provides information on experimental conditions that will required for generation indistinguishable photons.
In many InGaN/GaN single photon emitting structures, significant contamination of the stream by background emission is observed. Here, utilizing quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for reduction this contamination. Using resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, thus, report working dot device III-nitride system DBRs. Uncorrected g(2)(0) values are...
A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements both time-varying emission spectra and intensity autocorrelation times. Excitation dependent phenomena are investigated optical excitation carriers into GaN barrier material also directly InGaN. InGaN reveals that fastest environmental fluctuations occur on timescales as long a few hundreds nanoseconds: an order magnitude longer than...
We report the realization of single photon emission from an InGaN quantum dot in a GaN inverted truncated-pyramid structure: horn. The structural parameters dots, especially confinement (0001) direction, are well controlled by optimizing planar to be ∼2 monolayers. Based on conventional nanoimprint pillars combining with simple regrowth process, horn structure is realized efficient 8 × 105 photons/s while still maintaining g(2)(0) < 0.5 even at extremely low excitation power 35 nW...
Abstract The temperature dependent single photon emission statistics of interface-fluctuation GaN quantum dots are reported. Quantum light is confirmed at temperatures up to ~77 K, by which point the background degrades purity and results in a measured g (2) (0) excess 0.5. A discussion on extent contamination also given through comparison extensive data taken under various ambient experimental conditions, revealing that themselves emitting photons with high purity.
Photon autocorrelation measurements are used to investigate the power dependent single photon emission of recently reported interface fluctuation GaN quantum dots (QDs), which exhibit relatively narrow linewidths. The intrinsic exciton lifetime such a dot is evaluated be 2.0 ± 0.1 ns from its dynamics. This result comparable with typical SK QDs that emit at similar energy, and provides further evidence linewidth in structures results cleaner environment.
ABSTRACT Novel core–shell LaF 3 : Eu 3+ nanocrystals/PNIPAM nanogels were prepared by surface‐initiated living radical polymerization. The microstructure and performance of the nanocrystals hybrid characterized transmission electron microscopy (TEM), X‐ray diffraction (XRD), photoelectron spectrometer (XPS), photoluminescence (PL). thermosensitive fluorescence behaviors drug release investigated PL at various temperatures. results suggested that was influenced greatly ambient temperature,...
Membrane fouling is one of the main bottlenecks in membrane separation processes for water purification. Due to complexity foulants, engineering surface coordinate multi-defense mechanisms essential fabricating membranes with broad-spectrum antifouling performance. In this study, we synthesized a heterostructured modifier comprising zwitterionic, fluorine-containing polymeric segments and inorganic silver nanoparticles. The modifiers were synergistically segregated during non-solvent induced...
In this work, EuF 3 and NaYF 4 nanocrystals were prepared by liquid-solution-solid (LSS) method respectively, high-resolution transmission electron microscopy (HRTEM) images revealed that the as-prepared monodisperse nanoparticles with size about 30 nm; while polydisperse of 5～20 nm.And they used to prepare a series novel ternary complex hydrogels -NaYF nanocrystals/poly(N-isopropyl acrylamide) (PNIPAm) free radical polymerization.In typical synthesis, 2 mg nanocrystals, 201.6 reactants...
Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of QDs on AlN achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using and Al 0.7 Ga 0.3 N layers to maximize refractive index contrast, developed. 50‐period DBR achieves 98% at wavelength 272 nm. Scanning transmission electron microscopy energy loss spectroscopy analyses reveal trisection periods,...
We report the observation and characterization of sharp emission lines from Zn-related centers in GaN. Initial studies on show that they appear only at low temperatures (T < 50 K), are energetically stable, exhibit linewidths a few meV. A brief discussion their possible origins is given.