A5108144718- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
Institute of Microelectronics
2023-2024
Chinese Academy of Sciences
2023-2024
University of Chinese Academy of Sciences
2023
Abstract Silicon-on-insulator devices are widely utilized in high-performance and high-reliability fields, facing challenges from self-heating effects (SHEs). However, research on the heat dissipation path closely related to SHEs remains incomplete. This paper initiates an in-depth analysis of thermal involving fine structures within path, using ultrafast pulse I–V measurements combined with simulations. It is found practical processes that scaled-down decreased by 40% rather than increased....
Abstract Partially-depleted silicon-on-insulator (PDSOI) MOSFETs with full dielectric isolation structure are widely used in the high temperature field of 225 °C, but affected by threshold voltage and carrier mobility, saturated output current has a rate change as 24.9% at 25 °C–300 which will reduce working speed accuracy analog circuit. This paper studies characteristics ultra-thin body buried oxide (UTBB) fully-depleted (FDSOI) 28 nm low structure. The experimental results show that when...
The electrical performance of high-precision analog and digital circuits in MOSFETs is highly sensitive to temperature changes. Here, by studying the stability characteristics such as OFF-state leakage current, saturation transconductance efficiency fully depleted silicon-on-insulator (FDSOI) partially (PDSOI) range 25 °C–300 °C, we proposed a new semiconductor-parameter-temperature-increment (SPTI) model. Within this SPTI model, it can clarify influence high-temperature parameters,...