A5014815482- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Hepatitis B Virus Studies
- Hepatitis Viruses Studies and Epidemiology
- Metal and Thin Film Mechanics
- HIV, Drug Use, Sexual Risk
- Hepatitis C virus research
- HIV/AIDS Research and Interventions
- Diamond and Carbon-based Materials Research
- Semiconductor materials and interfaces
Institute of Microelectronics
2018-2024
Yinchuan First People's Hospital
2024
Chinese Academy of Sciences
2018-2023
In our work, insights into the total dose response and native point defect behavior in Al2O3 gate dielectric during irradiation were gained by gamma-ray experiments first-principles calculations. It is found that O vacancy (VO) can act as a hole trap irradiation, leading to negative shift of capacitance–voltage (C–V) curves Al2O3-based metal–oxide–semiconductor (MOS) structure. Our calculations show neutral VO becomes +2 charged center after positively kind conductive path for electrons,...
Background Hepatitis B poses a significant global public health challenge, with mother-to-child transmission (MTCT) being the primary method of hepatitis virus (HBV) transmission. The prevalence HBV infection in China is highest Asia, and it carries greatest burden globally. Objective This study aims to critically evaluate existing local strategies for preventing MTCT proposed potential enhancements by analyzing among pregnant women their neonates Yinchuan. Methods From January 2017 December...
Abstract Silicon-on-insulator devices are widely utilized in high-performance and high-reliability fields, facing challenges from self-heating effects (SHEs). However, research on the heat dissipation path closely related to SHEs remains incomplete. This paper initiates an in-depth analysis of thermal involving fine structures within path, using ultrafast pulse I–V measurements combined with simulations. It is found practical processes that scaled-down decreased by 40% rather than increased....
<sec> <title>BACKGROUND</title> Hepatitis B poses a significant global public health challenge, with mother-to-child transmission (MTCT) being the primary method of hepatitis virus (HBV) transmission. The prevalence HBV infection in China is highest Asia, and it carries greatest burden globally. </sec> <title>OBJECTIVE</title> This study aims to critically evaluate existing local strategies for preventing MTCT proposed potential enhancements by analyzing among pregnant women their neonates...
Abstract Partially depleted silicon-on-insulator (PDSOI) MOSFETs are widely used in 225 °C high-temperature electronic system applications with integrated circuits. But the process node stays at 0.5 µ m for a long time and no further breakthrough can be achieved. This paper reports characteristics of 28 nm ultra-thin body box fully SOI (FDSOI) CMOS transistors low threshold voltage (LVT) structure. Experimental results demonstrate that V t shift changes temperature as 0.59 mV −1 ,...
Abstract Partially-depleted silicon-on-insulator (PDSOI) MOSFETs with full dielectric isolation structure are widely used in the high temperature field of 225 °C, but affected by threshold voltage and carrier mobility, saturated output current has a rate change as 24.9% at 25 °C–300 which will reduce working speed accuracy analog circuit. This paper studies characteristics ultra-thin body buried oxide (UTBB) fully-depleted (FDSOI) 28 nm low structure. The experimental results show that when...