We report on a new process to make films of Y1Ba2Cu3O7 using coevaporation Y, Cu, and BaF2 SrTiO3 substrates. The have high transition temperatures (up 91 K for full resistive transition), critical current densities (106 A/cm2 at 81 K), reduced sensitivity fabrication environmental conditions. Because the lower reactivity films, we been able pattern them in both pre-annealed post-annealed states conventional positive photoresist technology.

In this paper 2011 energy consumption, green house gas (GHG) emission, and ENERGY STAR Energy Performance Rating (EPR) data for 953 office buildings in New York City are examined. The were made public as a result of City's local law 84. Twenty-one these identified LEED-certified, providing the opportunity direct comparison performance LEED non-LEED same type, time frame, geographical climate region. With regard to consumption GHG emission LEED-certified buildings, collectively, showed no...

An ac technique is described for measuring low-frequency resistance fluctuation spectra with improved sensitivity over dc methods achieved by avoiding preamplifier 1/f noise. The technique, easily implemented decade resistors and a lock-in amplifier, allows the current noise of low-resistance (r<10 kΩ) specimens to be measured frequencies below 1 mHz. Use center-tapped, four-probe specimen geometry discrimination between contact eliminates due bath temperature variations. demonstrated...

The basic principles behind the operation of a lock-in amplifier are described. Particular emphasis is placed on looking at frequency components signal present various stages during typical measurement. description presented here has been used successfully to explain upper-level laboratory students Oberlin College.

An extensive comparison of the 1/f noise and radiation response MOS devices is presented. Variations in room-temperature unirradiated transistors linear regime device operation correlate strongly with variations postirradiation threshold-voltage shifts due to oxide trap charge. A simple number fluctuation model has been developed semi-quantitatively account for this correlation. The irradiated n-channel increases during irradiation increasing oxide-trap charge decreases positive-bias...

We have found that the 1/f-noise magnitude of unirradiated metal-oxide-semiconductor (MOS) transistors correlates strikingly with radiation-induced-hole trapping efficiency oxide (${f}_{\mathrm{OT}}$). This suggests previously unidentified defect causes 1/f noise in MOS is linked to trap, ``E' center,'' or a direct precursor (likely simple oxygen vacancy) known be present ${\mathrm{SiO}}_{2}$ before irradiation. derive equation relates and ${f}_{\mathrm{OT}}$.

The American Physical Society regularly produces reports on issues of public import that require technical understanding and for which an objective authoritative analysis would be particular use to the policy makers. This report, entitled Energy Future: Think Efficiency, is latest in series appears here as a special supplement issue Reviews Modern Physics, have other such reports. It hard imagine more timely study topic, given urgent environmental, geopolitical, economic incentives improving...

Our effort towards the attainment of high performance devices has yielded several with total-area conversion efficiencies above 16%, highest measuring 16.8% under standard reporting conditions (ASTM E892-87, Global 1000 W/m/sup 2/). The first attempts to translate this development larger areas resulted in an efficiency 12.5% for a 16.8-cm/sup 2/ monolithically interconnected submodule test structure, and 15.3% 4.85-cm/sup single cell. Achievement 17.2% device fabricated operation...

Small multiprobe resistors have been fabricated from continuous metal films of Ag, Al, Au, Cr, Cu, Mo, Nb, Ni, Pt, and W deposited under various conditions. Each shows some reproducible level flicker (1/f) noise. This study implicates carrier scattering by extrinsic defects or impurities as the source resistivity fluctuations. The noise appears to be determined number introduced in film during deposition. We introduce a new quantity,...

We have examined the 1/f noise of 3 /spl mu/m/spl times/16 mu/m, n- and p-MOS transistors as a function frequency (f), gate-voltage (V/sub g/) temperature (T). Measurements were performed for Hz/spl les/f/spl les/50 kHz, 100 mV/spl les/|V/sub g/-V/sub th/|/spl les/4 V, 77 K/spl les/T/spl les/300 K, where V/sub th/ is threshold voltage. Devices operated in strong inversion their linear regimes. At room we find that, n-MOS transistors, S(V/sub d/)/spl prop/V/sub d//sup 2//(V/sub th/)/sup 2/,...

It was found that the 1/f noise and channel resistance of unirradiated nMOS transistors from a single lot with various gate-oxide splits closely correlate oxide-trap interface trap charge, respectively, following irradiation. The is explained by scattering interface-trap precursor defects. appears both mobility measurements may be useful in defining nondestructive hardness assurance test methods for devices fabricated technology. difficult to use either making cross-technology comparisons....

The authors have performed a detailed comparison of the preirradiation 1/f noise and radiation-induced threshold voltage shifts due to oxide-trapped interface-trapped charge, Delta V/sub ot/ it/, for enhancement-mode, 3- mu m-gate, n-channel MOS transistors taken from seven different wafers processed in same lot. These were prepared with gate oxides widely varying radiation hardness. It is shown that levels these devices correlate strongly postirradiation ot/, but not it/. results suggest...

Fluctuations of the number protons (${\mathrm{H}}^{+}$) that scatter conduction electrons dominate lowfrequency resistance fluctuations in Nb films. The excess-noise spectra ${S}_{V}(f, T)$ obey a scaling law: $\frac{f{S}_{V}(f, T)}{〈\ensuremath{\delta}{V}^{2}(T)〉}=g(\frac{f}{D(T)})$; for our geometry at $260<T<370$ K, T)\ensuremath{\propto}\frac{{c}_{0}(T)}{{f}^{\ensuremath{\alpha}}}$, $\ensuremath{\alpha}=0$ $f\ensuremath{\ll}\frac{D}{(\ensuremath{\pi}{L}^{2})}$ and...

Here we consider the analysis of temperature and frequency dependences power spectral density ${S}_{V}$(f,T) excess low-frequency noise. Two limiting cases that arise naturally from a superposition thermally activated relaxation processes are investigated. The Lorentzian spectra associated with various times \ensuremath{\tau}=${\ensuremath{\tau}}_{0}$${e}^{E/\mathrm{kT}}$ supposed to either (i) distribution D(E) activation energies E (invoked in Dutta-Horn model), or (ii)...

In this work, we present results from the largest study of measured, whole-building energy performance for commercial LEED-certified buildings, using 2016 use data that were obtained 4417 office buildings (114 million m2) municipal benchmarking disclosures 10 major U.S. cities. The properties included 551 (31 identified as LEED-certified. Annual and greenhouse gas (GHG) emission compared between LEED non-LEED offices on a city-by-city basis in aggregate. aggregate, demonstrated 11% site...

We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 μm×1.25 μm, enhancement-mode p-channel metal–oxide–semiconductor transistors operated strong inversion their linear regimes with constant drain-current and gate-voltage bias, for temperatures ranging from 4.2 to 300 K. The switching rates all RTSs above 30 K were thermally activated. rate only RTS below was activated but temperature independent 10 This response is consistent a crossover...

Measurements of the resistance and 1/f noise continuous thin-film indium conductors in temperature range 140–160 °C for frequencies 0.1–256 Hz are reported. The 250-nm-thick, 500-nm-wide, 5.0-μm-long, six-probe were fabricated on an oxidized silicon wafer using e-beam lithography, encapsulated with a 500-nm-thick layer Si3 Ni4 . Upon heating, melting occurred at (156±1) °C, whereas upon cooling, solidification (152±1) °C. band-limited variance 〈δr2〉 fluctuations was factor 10 lower liquid...

The measured coherence between the $\frac{1}{f}$ noise of two superimposed, thermally coupled but electrically insulated continuous gold films was found to be orders magnitude smaller than it would if this excess low-frequency were due temperature fluctuations. Thus fluctuations either extrinsic or thermodynamic origin cannot generally responsible for observed in substrate-mounted metal films.

We find a strong correlation between preirradiation channel resistance and radiation-induced interface-trap charge in n-channel metal-oxide-semiconductor (MOS) transistors. While it has long been known that the postirradiation mobility of MOS transistors degrades with exposure to ionizing radiation, we believe this is first time differences have linked device parameters. A simple model presented relates observed variations scattering from defects at Si/SiO2 interface which may be precursors charge.