A5065509849- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Advanced Measurement and Detection Methods
- Infrared Target Detection Methodologies
- Advanced MEMS and NEMS Technologies
- Advanced Fiber Optic Sensors
- Photoreceptor and optogenetics research
- Guidance and Control Systems
- Optical Systems and Laser Technology
- Neuroscience and Neural Engineering
- Radio Frequency Integrated Circuit Design
- Molecular Junctions and Nanostructures
- Photochromic and Fluorescence Chemistry
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advanced Sensor Technologies Research
- Photorefractive and Nonlinear Optics
- Advanced Optical Network Technologies
- Electromagnetic Launch and Propulsion Technology
- Digital Holography and Microscopy
- Advanced Optical Imaging Technologies
Xi'an Technological University
2025
Sun Yat-sen University
2025
Eindhoven University of Technology
2015-2017
University of California, San Diego
2002
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. responsivity 0.74 A/W 1550 nm and 0.93 1310 wavelength. 56 Gbps on-off-keying data reception demonstrated clear open eye diagrams in both the C-band O-band.
Noninvasive optical imaging techniques, including X-ray and near-infrared (NIR), hold significant value for scientific research industrial applications. However, there is still a lack of convenient platform that integrates NIR in both bright- dark-field Here, rare-earth ion-doped LaNbO4:Pr,Er photochromic luminescent material developed, integrating X-ray-induced coloration, NIR-induced bleaching, photoluminescence, luminescence modulation. Under alternating light irradiation, the...
This study numerically investigates the multi-physics coupling effects of supersonic projectiles on terminal ballistics, focusing shock wave interactions and their impact measurement accuracy. A novel acoustic-optic detection method is introduced, capable capturing refractive index changes induced by waves. Using COMSOL simulations, research demonstrates that this offers superior sensitivity compared to traditional approaches, providing a precise way determine projectile incidence angles....
We present the development of Ag/Ge based ohmic contacts to n-type InP with both low contact resistances and relatively optical losses.A specific resistance as 1.5×10 -6 Ω cm 2 is achieved by optimizing Ge layer thickness annealing conditions.The use instead metal first deposited results in a absorption loss telecommunication wavelength range.Compared Au contacts, Ag metallization also shows considerably reduced spiking effects after annealing.Contacts different lengths are on top membrane...
Abstract The multi-light screen measurement systems must be calibrated before being come into use, and a calibration method using live-fire practice is generally adopted. However, this has many shortcomings, such as high cost, risk poor efficiency. To effectively improve the accuracy of system, we propose based on array optical signal in paper. According to principle proposed theory systematically described. aim map given results form vector specified time sequence. Furthermore, develop...
In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due the high solubility Si InGaAs InGaAsP, heavily doped n-type layers are grown on wafers. This doping concentration gives rise annealing-free low at level 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . It also leads strong band-filling...
Purpose The paper aims to accurately measure the key motion parameters, such as velocity, azimuth and pitch angle, of small flying object with a non-uniform curve trajectory. It proposes measurement method its calculation model trajectory using photoelectric sensor array. Design/methodology/approach First, basic composition system mechanism array are described, respectively. Second, mathematical is constructed differently from traditional linear trajectory, taking into account influence...
Utilizing an InP membrane based cascaded acceptance optical receiver (CAO-Rx), we demonstrate 17.4Gbps wireless transmission in C-band. By separating light collection and opto-electrical conversion, CAO-Rx provides better efficiency electrical bandwidth simultaneously.
Adding photonic functions to silicon electronics has become an important research theme in the last decade. Here we present approach based on heterogeneously integrating indium phosphide membrane silicon. Within this realized a range of with competitive performances: lasers, fast detectors, waveguides, filters, couplers, modulators etc. This contribution describes technologies and results.
An InP membrane-based uni-traveiling carrier photodetector, heterogeneously integrated on silicon, is realized using double-sided processing.A responsivity of 0.7 A/W at 1.55 µm and a 3 dB bandwidth beyond 67 GHz are demonstrated.
The indium phosphide (InP) photonic integrated circuit (PIC) industry has been offering sensing solutions on a chip, with high precision and low cost. major application is sensor signal read-out. Its next generation, where the InP PICs are much smaller faster, enables new opportunities. We review our recent developments in next-generation PIC, discuss their potential optical sensing.
The reconstruction fidelity of gray-scale holographic images is analyzed quantitatively and assessed by use proposed quantities, especially the correlation coefficient between original retrieved images. physical factors affecting photorefractive holograms are investigated experimentally, leading to results that useful for determination recording-beam ratio exposure dosage high-fidelity retrieval. Investigation effects noise on multiplexed suggests that, if multiple-gray-scale data pages in a...
We have investigated the dependence of slope efficiency InAsP-GaInP strain-compensated 1.3 /spl mu/m MQW electroabsorption waveguide modulators on device length. The tradeoff between and bandwidth distinctly favors over lithium niobate modulators.