M. Sridharan

ORCID: 0000-0003-4005-0507
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About
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Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials
  • Analytical Chemistry and Sensors
  • Chalcogenide Semiconductor Thin Films
  • X-ray Diffraction in Crystallography
  • Advanced Semiconductor Detectors and Materials
  • Copper-based nanomaterials and applications
  • Crystallization and Solubility Studies
  • Quantum Dots Synthesis And Properties
  • Metal and Thin Film Mechanics
  • Advanced Chemical Sensor Technologies
  • Ga2O3 and related materials
  • Diamond and Carbon-based Materials Research
  • Acoustic Wave Resonator Technologies
  • Advanced Photocatalysis Techniques
  • TiO2 Photocatalysis and Solar Cells
  • Semiconductor materials and devices
  • Advanced Thermoelectric Materials and Devices
  • Conducting polymers and applications
  • Electrocatalysts for Energy Conversion
  • Advanced battery technologies research
  • Electronic and Structural Properties of Oxides
  • Advanced Sensor and Energy Harvesting Materials
  • Nanoparticles: synthesis and applications

SASTRA University
2016-2025

Kalasalingam Academy of Research and Education
2024

SRM Institute of Science and Technology
2019-2022

Tamil University
2016-2020

CeNTI (Portugal)
2016-2020

Swami Vivekanand College of Pharmacy
2018

Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology
2018

Vels University
2018

CeNTech
2016

Universitat Autònoma de Barcelona
2015

Incorporation of reduced graphene oxide (rGO) modifies the properties semiconducting metal nanoparticles and makes it possible to tune surface area pore size optimum values, which in turn improves their gas sensing properties. In this work, improve ammonia (NH3) characteristics, was incorporated into tungsten (WO3) nanospheres using a simple ultrasonication method. The rGO-WO3 nanocomposites exhibited porous nanosheets with nanospherical WO3 as observed field-emission scanning electron...

10.1039/c9na00048h article EN cc-by-nc Nanoscale Advances 2019-01-01

Despite the high sensitivity and selectivity, operating temperature required for activation energy of tin oxide (SnO2) still stands as a drawback SnO2 based gas sensors. In this work, thin films were deposited through spray pyrolysis subjected to sensing at 27 °C (room temperature) towards different gases. The exhibited consistently low response approximately 1 when tested various VOCs. type, concentration, mobility charge carriers determined from Hall measurements. carrier concentration...

10.1021/acsomega.3c04038 article EN cc-by-nc-nd ACS Omega 2023-08-30

Abstract Magnetron‐sputtered Al 2 O 3 thin films were annealed in ambient air. The phase compositions of the as‐deposited (i) fully amorphous, (ii) nanocrystalline γ ‐Al an amorphous matrix, and (iii) crystalline . For all samples, annealing to 1 100–1 150 °C resulted a transformation α ‐alumina. paths depend on fraction films. with low initial fraction, intermediate θ appeared range 000–1 100 °C. predominantly no phases observed, indicating direct ‐to‐ at ∼1

10.1002/ppap.200932301 article EN Plasma Processes and Polymers 2009-03-17

Single-step growth of V<sub>2</sub>O<sub>3</sub> nanosheets on glass substrates has been established for room-temperature ammonia sensing.

10.1039/c7ta10159g article EN Journal of Materials Chemistry A 2018-01-01

Trimethylamine (TMA) is highly toxic and can have lethal effects on living organisms. Detecting the presence of TMA in air very important because, if level exceeds OSHA (Occupational Safety Health Administration) limit, it may harm environment endanger human life. Doping an appropriate flexible way to change electrical structures metal oxide semiconductors (MOSs) improve their ability detect gases. In this work, Mn-doped zinc ferrite thin film nanorods with agglomerated morphology were...

10.1039/d3cp03867j article EN Physical Chemistry Chemical Physics 2023-01-01

n-Type Mg3Sb2-based thermoelectric materials have recently garnered significant interest due to their superior efficiency. Yet, the advancement of p-type Mg3Sb2 for applications is impeded by its lower dimensionless figure merit (zT). In this study, we demonstrate improved performance through strategic optimization Zn content and Ag doping on Mg/Zn(2) site. Initially, samples Mg3-xZnxSb2 (x = 0, 0.5, 1.0, 1.5) were synthesized via elemental reactions within a Pyrex tube, followed...

10.1021/acsami.4c12868 article EN ACS Applied Materials & Interfaces 2024-10-15

10.1007/s11664-014-3253-8 article EN Journal of Electronic Materials 2014-06-10
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