A5100361394- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Silicon and Solar Cell Technologies
- GaN-based semiconductor devices and materials
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Plasmonic and Surface Plasmon Research
- Semiconductor materials and devices
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Conducting polymers and applications
- Silicon Carbide Semiconductor Technologies
- Silicon Nanostructures and Photoluminescence
- Thermal Radiation and Cooling Technologies
- Metamaterials and Metasurfaces Applications
- Organic Electronics and Photovoltaics
- Advanced Semiconductor Detectors and Materials
- Multiferroics and related materials
- Near-Field Optical Microscopy
- 3D IC and TSV technologies
Australian National Fabrication Facility
2015-2025
Australian National University
2016-2025
Chinese PLA General Hospital
2025
Nanjing University
2023
Shanghai Institute of Microsystem and Information Technology
2022
Beijing Solar Energy Research Institute
2022
Northwestern Polytechnical University
2022
Ministry of Industry and Information Technology
2022
Guizhou University
2022
Northeastern University
2021
Polymer passivation layers can improve the open-circuit voltage of perovskite solar cells when inserted at perovskite-charge transport layer interfaces. Unfortunately, many such are poor conductors, leading to a trade-off between quality (voltage) and series resistance (fill factor, FF). Here, we introduce nanopatterned electron that overcomes this by modifying spatial distribution form nanoscale localized charge pathways through an otherwise passivated interface, thereby providing both...
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy experimentally determine a quantum efficiency ∼50%, which is on par epilayers. also demonstrate room-temperature, photonic mode lasing these nanowires. Their excellent structural optical quality opens up new possibilities for both fundamental optics optoelectronic devices.
Abstract Defect‐mediated carrier recombination at the interfaces between perovskite and neighboring charge transport layers limits efficiency of most state‐of‐the‐art solar cells. Passivation interfacial defects is thus essential for attaining cell efficiencies close to theoretical limit. In this work, a novel double‐sided passivation 3D films demonstrated with thin surface bulky organic cation–based halide compound forming 2D layered perovskite. Highly efficient (22.77%) mixed‐dimensional...
Avalanche and surge robustness involve fundamental carrier dynamics under high electric field current density. They are also prerequisites of any power device to survive common overvoltage overcurrent stresses in electronics applications such as vehicles, electricity grids, renewable energy processing. Despite tremendous efforts develop the next-generation devices using emerging ultra-wide bandgap semiconductors, lack effective bipolar doping has been a daunting obstacle for achieving...
Abstract Dimensional engineering of perovskite films is a promising pathway to improve the efficiency and stability solar cells (PSCs). In this context, surface or bulk passivation defects in 3D film by careful introduction 2D plays key role. Here authors demonstrate scheme based on octylammonium chloride, show that it provides both 1.6 eV bandgap for highly efficient (≈23.62%) PSCs with open‐circuit voltages up 1.24 V. Surface depth‐resolved microscopy spectroscopy analysis reveal Cl −...
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control nanowire properties but growth mechanisms remain rather unclear. Herein, we report a detailed study revealing that fundamental pure wurtzite InP ⟨111⟩A can indeed differ significantly from simple picture facet-limited selective-area process. A dual regime with and metallic droplet...
We characterize and discuss the impact of hydrogenation on performance phosphorus-doped polycrystalline silicon (poly-Si) films for passivating contact solar cells. Combining various characterization techniques including transmission electron microscopy, energy-dispersive X-ray spectroscopy, low-temperature photoluminescence quasi-steady-state photoconductance, Fourier-transform infrared we demonstrate that hydrogen content inside doped poly-Si layers can be manipulated to improve quality...
Bromide-containing long alkylammonium chain organic cations effectly passivate defects on 1.72 eV perovskite film surfaces and greatly enhance both the performance stability of solar cells.
Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, low energy consumption. Here, we report III-V semiconductor NW can also be used self-frequency conversion to extend their output wavelengths, as a result of non-centrosymmetric crystal structure strongly localized field in the NWs. From GaAs/In0.16Ga0.84As core/shell lasing at 1016 nm, an extra visible laser 508 nm is...
Greater demand for III–V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays InP tunable shapes, such as membrane-, prism-, ring-like which can be simultaneously grown by selective area epitaxy. Our in-depth shape evolution confirms essentially determined pattern...
The challenges of making high-performance, low-temperature processed, p-type transparent conductors (TCs) have been the main bottleneck for development flexible electronics. Though a few conducting oxides (TCOs) shown promising results, they need high processing temperature to achieve required conductivity which makes them unsuitable organic and electronic applications. Copper iodide is wide band gap semiconductor that can be heavily doped at low (<100 °C) comparable or higher than many...
Abstract III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact light sources and photodetectors from visible to infrared spectral region. However, most of the reported InGaAs/InP QW based on wurtzite phase exhibit non‐uniform morphology due complex heterostructure growth, making it challenging incorporate multiple‐QWs (MQW) optoelectronic applications. Here, a new strategy growth MQW nanowire arrays by selective area metalorganic vapor epitaxy is reported. It...
Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW currently exhibit poor directionality and high threshold gain, issues critically limiting prospects on-chip light sources with extremely reduced footprint efficient power consumption. Here, we propose a new design experimentally demonstrate vertically emitting indium phosphide (InP) laser structure showing emission energy requirements...
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. observe that embedded in consists three components with different compositions, axial well, ring radial leading to emission multiple wavelengths. The measurements show a strong dependence on current injection levels as temperatures these are...
Ultra-wide bandgap (UWBG) NiO/β-Ga2O3 p–n junction has recently emerged as a key building block for emerging electronic and optoelectronic devices. However, the long-term reliability of this bipolar remains elusive. Here, temporal evolution transient parametric shift is characterized in under prolonged forward- reverse-bias stresses well post-stress recoveries. The temperature-dependent evolutions reveal energy level time constant dominant trap. forward-bias stress found to induce negative...
Abstract Glutathione serves as a common biomarkers in tumor diagnosis and treatment. The levels of its intracellular concentration permit detailed investigation the microenvironment. However, low polarization weak Raman scattering cross‐section make direct indirect detection challenging. This study designs an amorphous‐crystalline urchin‐like TiO 2 (AC‐UL‐TiO ) for accurate identification GSH GSSG. By synergistically regulating crystalline core amorphous shell, bandgap structure is...
Recently, InGaAs/InP multiple quantum well nanowires grown by selective area epitaxy have been demonstrated with uniform morphology and high optical quality. The InGaAs wells wrapping around the nanowire core are formed both axial radial components. As such configuration presents a unique advantage for realization of intraband absorption normal-incidence light in nanowires, which cannot be achieved conventional planar structures due to polarization selection rules. We report here...
Current aerosol sample injection methods for coherent x-ray morphology suffer from excessive consumption due to the dispersion of aerosol.To remedy this we propose here a high aspect ratio optical funnel by using hollow Bessel-like beam with variable divergence, which may reduce significantly.We present estimated forces exerted on particles in transverse plane, depending various experimental conditions.We show that light pressure imposed formed 4.2 W continuous wave laser is sufficient...
The effect of above-band gap photons on the domains BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe microscopy. It is found that under illumination, relaxation time polarization state significantly extended, while effective polarizing voltage for pristine reduced. We propose this photoinduced domain stabilization can be attributed to interaction between photogenerated surface charges domains. Importantly, a similar phenomenon observed in other...
III–V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development nanoscale light-emitting devices applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient devices, not only high-quality materials but also a deep understanding their growth mechanisms material properties (structural, optical, electrical) are extremely critical. In particular, three-dimensional...
Abstract Implementing selective-area p-type doping through ion implantation is the most attractive choice for fabrication of GaN-based bipolar power and related devices. However, low activation efficiency magnesium (Mg) ions inevitable surface decomposition during high-temperature annealing process still limit use this technology In work, we demonstrate successful GaN using protective coatings a Mg thermal process. The conduction evidenced by positive Seebeck coefficient obtained thermopower...