Hyun Ho Choi

ORCID: 0000-0003-4172-5035
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About
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Research Areas
  • Organic Electronics and Photovoltaics
  • Conducting polymers and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Organic Light-Emitting Diodes Research
  • Advancements in Semiconductor Devices and Circuit Design
  • Molecular Junctions and Nanostructures
  • Perovskite Materials and Applications
  • Analytical Chemistry and Sensors
  • Nanomaterials and Printing Technologies
  • Synthesis and properties of polymers
  • Luminescence and Fluorescent Materials
  • Advanced Materials and Mechanics
  • Electrohydrodynamics and Fluid Dynamics
  • Advanced Thermoelectric Materials and Devices
  • Quantum optics and atomic interactions
  • Photonic and Optical Devices
  • Gas Sensing Nanomaterials and Sensors
  • Cardiovascular and Diving-Related Complications
  • Block Copolymer Self-Assembly
  • Integrated Circuits and Semiconductor Failure Analysis
  • Nanowire Synthesis and Applications
  • Electrowetting and Microfluidic Technologies

Gyeongsang National University
2019-2025

Rutgers, The State University of New Jersey
2015-2022

Pohang University of Science and Technology
2009-2018

Center for Advanced Soft Electronics
2012-2018

Pohang TechnoPark (South Korea)
2014

Polymer Research Institute
2007

Inha University
2000-2003

Despite the considerable efforts applied toward developing stretchable electronics, few intrinsically semiconductors have been reported that retain original electrical characteristics under stretching. This study introduces an and transparent organic semiconducting layer by blending self‐assembled nanowires (NWs) of semiconductor with elastomeric polymer. Blends poly(3‐hexylthiophene) (P3HT) NWs poly(dimethylsiloxane) (PDMS) yield P3HT NW networks embedded in PDMS matrix. Interestingly, it...

10.1002/aelm.201500250 article EN Advanced Electronic Materials 2015-10-29

Recent studies of the bias‐stress‐driven electrical instability organic field‐effect transistors (OFETs) are reviewed. OFETs operated under continuous gate and source/drain biases these bias stresses degrade device performance. The principles underlying this discussed, particularly mechanisms charge trapping. There three main charge‐trapping sites: semiconductor, dielectric, semiconductor‐dielectric interface. phenomena in regions analyzed with special attention to microstructural dependence...

10.1002/adma.201304665 article EN Advanced Materials 2014-02-14

Pseudo-regular alternating PDPP-TVS copolymers using an asymmetric monomer (thiophene-vinylene-selenophene (TVS)) are synthesized. Unlike regular copolymers, these polymers highly soluble in nonchlorinated solvents such as tetra-hydrofuran, toluene, xylene, and tetralin. The organic field-effect transistor devices fabricated dissolved exhibit a high hole mobility up to 8.2 cm(2) V(-1) s(-1).

10.1002/adma.201500335 article EN Advanced Materials 2015-05-05

Abstract In this progress report, recent advances in the development of organic transistors with superior bias stress stability and understanding charge traps that degrade device performance under prolonged are reviewed, a particular focus on materials science engineering methods. The phenomenological aspects effects experimental methods for investigating described. is discussed terms those components main attempts to improve stability, i.e., semiconductor layers, gate dielectrics,...

10.1002/adfm.201904590 article EN Advanced Functional Materials 2019-10-14

Electrohydrodynamic jet printing is a promising technology for high-resolution direct printing. This review provides comprehensive summary of the fabrication and methods various functional materials (and inks) practical devices.

10.1039/d1ma00463h article EN cc-by Materials Advances 2021-01-01

A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in segregation and crystal formation at air–film interface after spin-casting subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting dielectric layers exhibit high performances....

10.1002/adma.200900277 article EN Advanced Materials 2009-06-24

Abstract The phase‐separation characteristics of spin‐cast difluorinated‐triethylsilylethynyl anthradithiophene (F‐TESADT)/poly(methyl methacrylate) (PMMA) blends are investigated with the aim fabricating transistors a high field‐effect mobility and stability. It is found that presence PMMA in F‐TESADT/PMMA prevents dewetting F‐TESADT from substrate provides platform for molecules to segregate crystallize at air–film interface. By controlling solvent evaporation rate blend solution, it...

10.1002/adfm.201101159 article EN Advanced Functional Materials 2011-10-04

Understanding the vertical phase separation of donor and acceptor compounds in organic photovoltaics is requisite for control charge transport behavior achievement efficient collection. Here, vertically phase‐separated morphologies poly(3‐hexylthiophene):[6,6]phenyl‐C61‐butyric acid methyl ester (P3HT:PCBM) blend films are examined with transmission electron microtomography, dynamic secondary ion mass spectroscopy, X‐ray photoelectron spectroscopy. The 3D processed analyzed how solvent...

10.1002/aenm.201300612 article EN Advanced Energy Materials 2013-10-01

Abstract Highly crystalline thin films in organic semiconductors are important for applications high‐performance optoelectronics. Here, the effect of grain boundaries on Hall and charge transport properties transistors based two exemplary benchmark systems is elucidated: (1) solution‐processed blends 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C 8 ‐BTBT) small molecule indacenodithiophene‐benzothiadiazole 16 IDT‐BT) conjugated polymer, (2) large‐area vacuum evaporated polycrystalline...

10.1002/adfm.201903617 article EN Advanced Functional Materials 2019-07-11

Abstract Molecular doping in conjugated polymers (CPs) has recently received intensive attention for its potential to achieve high electrical conductivity organic thermoelectric materials. In particular, it affects not only the carrier density n but also mobility µ because degree of molecular changes morphological properties. Herein, effect CP thin films on pathways and mechanisms charge transport is investigated, which govern ‐ relationship. Two representative donor–acceptor type CPs with...

10.1002/adfm.202212825 article EN Advanced Functional Materials 2023-02-23

Abstract Herein is demonstrated that the polymer chain ends of gate‐ dielectrics (PGDs) in organic field‐effect transistors (OFETs) can trap charges; bias‐stress stability reduced without changes mobilities transistor devices as well morphologies semiconductors. The stabilities OFETs using PGD with various molecular weights (MWs) are investigated. Under bias stress ambient air, drain current decay and threshold voltage shift found to increase MW decreases (MW effect). This effect caused by...

10.1002/adfm.201201084 article EN Advanced Functional Materials 2012-07-09

A new donor–acceptor organic semiconducting co-polymer (PDPP-TAT) containing acetylene linkages based on dithienyl-diketopyrrolopyrrole (tDPP) has been synthesized and compared with a tDPP-based (PDPP-TVT) vinylene linkages. The sp-hybridized carbons in the result favorable overlap of electron wave functions tDPP units along main chain. Further, π-conjugation PDPP-TAT was found to be highly insensitive chain conformation, contrast that PDPP-TVT. As result, provides charge transport for...

10.1021/cm5014703 article EN Chemistry of Materials 2014-06-18

The evaporation-induced self-alignment of semiconductor nanowires is achieved using wrinkled elastomeric templates. templates, which have a surface topography that can be tuned via changes in the mechanical strain, are used as both template to align and stamp transfer aligned target substrates.

10.1002/adma.201203687 article EN Advanced Materials 2013-01-27

Temperature‐dependent (80–350 K) charge transport in polymer semiconductor thin films is studied parallel with situ X‐ray structural characterization at equivalent temperatures. The study conducted on a pair of isoindigo‐based polymers containing the same π‐conjugated backbone different side chains: one siloxane‐terminated chains (PII2T‐Si) and other branched alkyl‐terminated (PII2T‐Ref). chemical moiety chain results completely film morphology. PII2T‐Si show domains both edge‐on face‐on...

10.1002/adfm.201601164 article EN Advanced Functional Materials 2016-04-25

Inkjet printing of semiconducting polymers is desirable for realizing low‐cost, large‐area printed electronics. However, sequential inkjet methods often suffer from nozzle clogging because the solubility in organic solvents limited. Here, it demonstrated that addition an insulating polymer to a ink greatly enhances and stability ink, leading stable ejection droplets. This bicomponent blend comprising liquid‐crystalline copolymer, poly(didodecylquaterthiophene‐alt‐didodecylbithiazole)...

10.1002/adfm.201504786 article EN Advanced Functional Materials 2016-02-10

Structural composites for electric vehicles should have lightweight, mechanically strong, efficient electromagnetic shielding. Although thermoplastic composite material plays a structural role and aluminum thin film (Al foil) the of wave shielding, poor interfacial adhesion tear-resistance Al foil need to be overcome. In this work, we demonstrated novel, high-performance EMI-shielding multilayer structure based on an (Al), glass fabric (GF), carbon fiber-reinforced (CFT), adhesive....

10.1016/j.matdes.2022.110452 article EN cc-by Materials & Design 2022-02-07

Systematic studies on the screen printing of Ag paste and multiwalled carbon nanotube (CNT) composite inks were performed to explore feasibility technique in electrode patterning organic integrated circuits. By in-depth consideration physical properties Ag/CNT ink as well conditions, optimized patterns screen-printed substrates exhibited good pattern fidelity stable electrical conductance against external tensile stretching. Significantly, had trapezoidal-shaped edges at an angle 9.5°; these...

10.1021/acsanm.1c04317 article EN ACS Applied Nano Materials 2022-03-18

Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between semiconductor and gate insulator. Therefore, these can enhance OTFT's operation stability. In this study, we synthesized a new insulating material series composed of acrylate fluorinated functional groups (with different ratios) named MBHCa-F used them as insulators OTFTs in other applications. The...

10.1021/acsami.3c02010 article EN ACS Applied Materials & Interfaces 2023-06-28

Oligo(ethylene glycol)-incorporated hybrid linear alkyl side chains, serving as solubilizing groups, are designed and introduced into naphthalene-diimide-based n-channel copolymers. The synthesized polymers exhibit unipolar n-type operation with an electron mobility of up to 1.64 cm(2) V(-1) s(-1), which demonstrates the usefulness chains in polymer electronics applications.

10.1039/c4cc08381d article EN Chemical Communications 2014-12-02

In this work, we discovered a very efficient method of crystallization thermally evaporated rubrene, resulting in ultrathin, large-area, fully connected, and highly crystalline thin films organic semiconductor with grain size up to 500 μm charge carrier mobility 3.5 cm2 V–1 s–1. We found that it is critical use 5 nm-thick underlayer on which film amorphous rubrene then annealed dramatically influence the ability crystallize. The property controls glass transition temperature. By...

10.1021/acs.chemmater.7b01143 article EN Chemistry of Materials 2017-07-16

Abstract Charge carrier mobility is an important characteristic of organic field‐effect transistors (OFETs) and other semiconductor devices. However, accurate determination in FETs frequently compromised by issues related to Schottky‐barrier contact resistance, that can be efficiently addressed measurements 4‐probe/Hall‐bar geometry. Here, it shown this technique, widely used materials science, still lead significant overestimation due longitudinal channel shunting caused voltage probes...

10.1002/adfm.201707105 article EN publisher-specific-oa Advanced Functional Materials 2018-04-30

Utilizing the intrinsic mobility-strain relationship in semiconductors is critical for enabling strain engineering applications high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra an organic semiconductor as a function uniaxial mechanical are reported. This study reveals very strong, anisotropic, reversible modulation (trap-free) charge carrier mobility single-crystal rubrene transistors with strain, showing that effective circuits can be enhanced by up...

10.1002/advs.201901824 article EN cc-by Advanced Science 2019-11-13
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