A5037671352- Graphene research and applications
- Photonic and Optical Devices
- Boron and Carbon Nanomaterials Research
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Quantum and electron transport phenomena
- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Plasmonic and Surface Plasmon Research
- MXene and MAX Phase Materials
- Diamond and Carbon-based Materials Research
- Advanced Memory and Neural Computing
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- Microwave Engineering and Waveguides
- Supercapacitor Materials and Fabrication
- Ferroelectric and Negative Capacitance Devices
- Advanced Fiber Optic Sensors
- Radio Frequency Integrated Circuit Design
- Ocular and Laser Science Research
- Nanopore and Nanochannel Transport Studies
- Advanced Antenna and Metasurface Technologies
Islamic Azad University, Arak
2012-2025
Islamic Azad University, Tehran
2012-2017
University of Tehran
2017
Sharif University of Technology
2017
Islamic Azad University, Science and Research Branch
2017
Abstract In this study, a new tri‐band balanced band‐pass filter (BPF) design based on single‐stepped‐impedance ring resonator (SIRR) with four stepped stubs loaded the feeding structure was proposed, analyzed, and equations were derived. Using SIRR properties in combination open stubs, multiple transmission zeros (TZs) generated, by adjusting location of TZs, high selectivity an ultra‐wide differential‐mode (DM) stopband bandwidth achieved. A pair symmetry line also integrated to enhance...
The impact of surface roughness on the chemical reactivity gold holds significant importance. This phenomenon can be elucidated from an electronic viewpoint by examining work function as a fundamental material property. In this research, we investigated relationship between (WF) and using density functional theory calculations. Surface was explored two perspectives: (1) (2) geometry. results demonstrate correlation increasing decreasing gold. reduction in function, specifically its initial...
Abstract The design of balanced filters based on composite right/left hand (CRLH) structure is well developed. Among those, few designs exist which although they provide some good responses, suffer from narrow stopbands and interdependent passbands. This paper proposes a new technique for improving the characteristics dual-band bandpass (B-BPFs) planar CRLH. Using unequal inductive stubs (UISs) attached to interdigital capacitor (IDC) unit cell, we were able achieve outstanding harmonic...
In this paper, for the first time, we present a computational study on electrical behavior of field-effect tunneling transistor based vertical graphene-MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> heterostructure and graphene nanoribbon-MoS heterostructure. Our simulation is nonequilibrium Green's function formalism along with an atomistic tight-binding(TB) model. The TB parameters are obtained by fitting bandstructure to...
In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based vertical graphene-WS2 heterostructure and graphene nanoribbon (GNR)-WS2 (VTGNRFET). Our model uses nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting bandstructure to principles results. We show that, due advantage switching between thermionic transport regimes,...
In this paper, the electrical characteristics of tunneling transistors based on vertical graphene and a hexagonal boron-carbon-nitrogen (hBCN) heterostructure are studied compared theoretically. We have considered three different types hBCN, i.e., BC2N, BC2N′, BC6N as barrier. Our simulation is nonequilibrium Green’s function formalism along with an atomistic tight-binding (TB) model. The TB parameters obtained by fitting band structure to first-principles results. By using method, device,...
We present an analytical model to analyze the influence of carrier dynamics on static and dynamic responses transistor laser (TL). Our analysis is based solving continuity equation rate equations which incorporate virtual states as a conversion mechanism. show that details dc small signal behavior lasers are strongly affected by escape capture times carriers in quantum well (QW). Also, effects recombination lifetime base regions TL performances investigated.
We present a computational study on the electrical behavior of field-effect transistor based vertical graphene-hBN-χ3 borophene heterostructure and graphene nanoribbon-hBN-χ3 nanoribbon heterostructure. use nonequilibrium Green function formalism along with an atomistic tight-binding (TB) model. The TB parameters are calculated by fitting band structure first-principle results. Also, characteristics device, such as ION/IOFF ratio, subthreshold swing, intrinsic gate-delay time, investigated....
In this study, we investigate the adsorption of harmful gases - CO, NO, NO2, SO2, and O3 molecules on a B2N monolayer using periodic density functional theory. The energy values for CO/B2N, NO/B2N, NO2/B2N, SO2/B2N, O3/B2N complexes are determined to be -1.96, -1.39, -1.80, -0.70, − 2.36 eV, respectively. has ability adsorb gas molecules, even in humid air, displays favorable standard recovery time when exposed SO2 gas. Consequently, impact transmission characteristics been assessed through...
We present a quantum study on the electrical behavior of self-switching diode (SSD). Our simulation is based non-equilibrium Green’s function formalism along with an atomistic tight-binding model. Using this method, characteristics devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, effects geometrical variations parameters SSDs simulated. The carrier distribution inside nano-channel successfully simulated in two-dimensional model under...