A5053062384- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Photonic and Optical Devices
- Solid State Laser Technologies
- Advanced Fiber Laser Technologies
- Advanced Semiconductor Detectors and Materials
- Laser Design and Applications
- Advanced Optical Sensing Technologies
- Quantum Dots Synthesis And Properties
- Photonic Crystal and Fiber Optics
- Ocular and Laser Science Research
- Atmospheric Ozone and Climate
- Advanced Photocatalysis Techniques
- Nuclear Materials and Properties
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- Laser Material Processing Techniques
- Advanced Fiber Optic Sensors
- Photorefractive and Nonlinear Optics
- Infrared Target Detection Methodologies
- Mechanical and Optical Resonators
- Nuclear Physics and Applications
- Atmospheric and Environmental Gas Dynamics
- Quantum Information and Cryptography
Institute of Semiconductors
2016-2025
Chinese Academy of Sciences
2016-2025
University of Chinese Academy of Sciences
2018-2025
Beijing Academy of Quantum Information Sciences
2022
CAS Key Laboratory of Urban Pollutant Conversion
2016-2018
University of Science and Technology of China
2016-2018
Xi'an Jiaotong University
2014
Ministry of Education of the People's Republic of China
2014
Shenyang Ligong University
2013
Abstract Power scaling in conventional broad-area (BA) lasers often leads to the operation of higher-order lateral modes, resulting a multiple-lobe far-field profile with large divergence. Here, we report an advanced sawtooth waveguide (ASW) structure integrated onto wide ridge waveguide. It strategically enhances loss difference between modes and fundamental mode, thereby facilitating high-power narrow-beam emission. Both optical simulations experimental results illustrate significant...
We report on the fabrication of high-power, high-spectral-purity GaSb-based laterally coupled distributed feedback (LC-DFB) lasers emitting at 2 μm. Second-order Chromium-Bragg-gratings are fabricated alongside ridge waveguide by lift off. Due to introduction gain coupling, exhibit a stable single mode operation [side-mode suppression ratio (SMSR) >40 dB] from 10 °C 50 and maximum SMSR is as high 53 dB. At heat-sink temperature °C, emit more than 40 mW continuous-wave in longitudinal...
Abstract Thanks to high performance above room temperature, antimonide laser diodes have shown great potential for broad application in the mid-infrared spectral region. However, laser`s noticeably deteriorates due reduction of carrier confinement with increased emission wavelength. In this paper, a novel active region higher confinements both electron and hole, by usage an indirect bandgap material Al 0.5 GaAs 0.04 Sb as quantum barrier, was put up address poor GaSb-based type-I...
InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and non-uniform size distribution deteriorates device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during epitaxy, photoluminescence (PL) linewidth significantly narrowed to 26.1 meV flushed sample maintained 27.3 unflushed sample. The shows better in threshold current (0.229 0.334 A at 15 °C), power (1.142...
Antimonide laser diodes, with their high performance above room temperature, exhibit significant potential for widespread applications in the mid-infrared spectral region. However, laser’s significantly degrades as emission wavelength increases, primarily due to severe quantum-well hole leakage and non-radiative recombination. In this paper, we put up an active region a valence band offset excellent crystalline quality luminescence improve performance. The miscibility gap of InGaAsSb alloy...
A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered Ga
Single-mode semiconductor laser operating near the 2 μm wavelength is of great interest for trace-gas detection, remote sensing, and infrared spectroscopy. Here, we present μm-wavelength-range sources with high output power, precise control, narrow spectral linewidth enabled by hybrid integration a GaSb-based gain chip silicon nitride Bragg gratings. Low-kappa gratings are used as feedback component to accurately select lasing increase photon lifetime achieve narrow-linewidth emission. The...
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the grown with digital alloy techniques consisting binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency 26% and an higher than 16% at 1 W achieved continuous-wave operation for a 2-mm-long 100-μm-wide stripe laser. maximum output single emitter reaches to 1.4 7 A. 19-emitter bars 20% 16 fabricated. Lasers short-period-pair proved have improved temperature...
We report on a GaSb-based superluminescent diode optimized for high-power broadband operation around wavelength of 2 μm. The high optical power was achieved by the high-quality epitaxial InGaSb/AlGaAsSb type-I quantum well gain material, which processed into double-pass amplification configuration. To prevent lasing at current injection while enabling strong amplified spontaneous emission, cascade cavity suppression waveguide geometry designed to connect vertical rear facet with...
A hybrid structured TiO<sub>2</sub>/ZnO photoanode was composed of highly ordered ZnO nanowires (NWs) and small TiO<sub>2</sub> nanoparticles (NPs) filling the gaps among NWs.
We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating continuous wave at room temperature without re-growth process. Second-order Bragg are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB cavity of 1500 μm achieves single longitudinal mode continuous-wave operation 20 °C side suppression ratio (SMSR) as high 24 dB. The maximum output power is about 10 mW (uncoated facet). A low...
In this paper, we put up a robust design of stable single-mode-operated GaSb-based laser diode emitting around 1950nm. This novel structure with socketed ridge-waveguide enables simple fabrication and batch production mid-infrared diodes on account the mere usage standard photolithography. By introducing micron-level index perturbations distributed along ridge waveguide, threshold gains different FP modes are modulated. Four geometrical parameters systematically optimized by analyzing...
In this article, we present a tunable GaSb-based blazed grating external cavity laser (BG-ECL) with high spectral purity and output power single-mode operation around 1940nm. The drastic increase in selectivity optical results from the employment of single-transverse-mode operating narrow ridge waveguide diode an optimized AR coating on front facet. stable fundamental spatial mode beam enables efficient collimation coupling efficiency grating, leading to stronger wavelength-selective...
High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier InP substrate have been demonstrated. These exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm ∼2.6 μm, respectively. At a bias voltage −100 mV voltage, the device exhibits peak responsivity 0.618 A/W at 2.1 corresponding to quantum efficiency 36.5%. The saturated dark current shot noise limited specific detectivity (D*) 4.12 × 1010 cm·Hz1/2/W (at μm)...
We propose a novel graded AlGaAsSb layer growth method to achieve super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface lattice-matched epitaxy was confirmed AFM HRXRD characterization of sample. With inserted between cladding waveguide layers, high-power, high-efficiency GaSb-based laser emitters bars were confirmed. The linearly smooths potential barrier peak which resulted in low turn-on voltage 0.65 V an ultra-low series...
GaSb-based single-transverse-mode narrow ridge waveguide (RW) lasers with high power and simultaneous good beam quality have broad application prospects in the mid-infrared wavelength region. Yet its design formation not been investigated systematically, while characteristics that affect their suitability for specific applications remain rarely analyzed optimized. The present work addresses these issues by theoretically establishing a parameter domain generalizes overall possible...
Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure broad-area (BA) lasers high-power output is normally accompanied by multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure mode filtering. The excellent control capability doubly confirmed optical simulations complete device measurements. optimized shows enhanced continuous-wave power in...
The GaSb-based distributed Bragg reflection (DBR) diode laser with 23rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma (ICP) etching. ICP etching conditions were optimized the relationship among depth, duty ratio side-mode suppression (SMSR) was studied. device a ridge width of 100 μm, period 13 μm depth 1.55 as well 85% fabricated, its maximum SMSR reached 22.52 dB uncoated cavity facets under single longitudinal operation mode at room temperature.
We report on the fabrication of high-power type-I laterally coupled distributed feedback lasers with metal gratings emitting around 2 μm. The second-order Cr-Bragg were patterned alongside ridge waveguide by lift-off. Single-mode continuous-wave operation side mode suppression ratio as high 40 dB is achieved. For cavity length 800 μm, maximum output power exceeding 28 mW per facet at room temperature without coating. optoelectronic conversion efficiency 6.3% a slope 0.1 W/A. show narrow line...