Abstract Parameters controlling intrinsic stability and reactivity of organosilanols generated from alkoxysilanes in aqueous environments have been elucidated several experiments. Data involving kinetics, equilibrium, phase separation, bonding studies alkyl organofunctional are presented. The indicate that the rates hydrolysis generally related to their steric bulk, but demonstrate after rate-limiting first alkoxy group effects much less important. Aqueous alkylalkoxysilanes was studied...

This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride nitride-rich films, i.e., with C inclusion, both in hydrogenated (SiNx:H SiNx:H(C)) non-hydrogenated (SiNx SiNx(C)) forms. The emphasis is on emerging trends innovations these SiNx material system technologies, focus Si N source chemistries thin film growth processes, including their primary effects resulting properties. It also illustrates that its SiNx(C) derivative are...

Accelerating interest in silicon nitride thin film material system continues both academic and industrial communities due to its highly desirable physical, chemical, electrical properties the potential enable new device technologies. As considered here, encompasses non-hydrogenated (SiN x ) hydrogenated :H) nitride, as well nitride-rich films, defined SiN with C inclusion, (C)) :H(C)) forms. Due extremely high level of these materials, this article is intended a follow-up authors’ earlier...

Silicon carbide (SiC x ) thin films deposition processes fall primarily into three main categories: (1) chemical vapor (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical (PVD), various forms of sputtering; (3) alternative (non-CVD non-PVD) methodologies. Part I this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to for SiC nanostructures, as well modeling...

Heterocyclic silanes containing Si-N or Si-S bonds in the ring undergo a opening reaction with -OH groups at surface of porous Si nanostructures to generate -SH -NH functional surfaces, grafted via O-Si bonds. The is substantially faster (0.5-2 h 25 °C) and more efficient than hydrolytic condensation trialkoxysilanes on similar hydroxy-terminated retains open pore structure photoluminescence quantum-confined silicon nanostructures. chemistry sufficiently mild allow trapping test protein...

Cobalt metallic films are the subject of an ever-expanding academic and industrial interest for incorporation into a multitude new technological applications. This report reviews state-of-the art chemistry deposition techniques cobalt thin films, highlighting innovations in metal-organic chemical vapor (MOCVD), plasma thermal atomic layer (ALD), as well pulsed MOCVD technologies, focusing on source precursors, ultrathin film growth processes, resulting effects composition, resistivity other...

In Part I of a two-part report, we provide detailed and systematic review the latest progress in cutting-edge innovations for silicon carbide (SiC) material system, focusing on chemical vapor deposition (CVD) thin film technologies. To this end, up-to-date results from both incremental developments traditional SiC applications as well major advances novel usages are summarized. Emphasis is placed new sources Si C, particularly form single source precursors emerging molecular atomic scale...

Elastomeric polysiloxane nanocomposites with elongations of >5000% (more than 3× greater any previously reported material) excellent shape recovery are presented. Highly deformable materials desirable for the fabrication stretchable implants and microfluidic devices. No crosslinking or domain formation is observed by a variety analytical techniques, suggesting that their elastomeric behavior caused polymer chain entanglements.

Key findings are presented from a systematic study which evaluated the performance of chemical vapor deposited (CVD) nitrogenrich tantalum nitride films as diffusion barrier in copper (Cu) based metallization schemes. For this purpose, 3800 Å thick Cu were grown by physical deposition (PVD) on 550 low temperature (<425°C) thermal CVD (TCVD) using pentabromide , ammonia, and hydrogen coreactants. The resulting stacks annealed argon ambient at 450, 500, 550, 650°C for 30 min each, along with...

Abstract Organic trihydridosilanes can be grafted to hydrogen‐terminated porous Si nanostructures with no catalyst. The reaction proceeds efficiently at 80 °C, and it shows little sensitivity air or water impurities. modified surfaces are stable corrosive aqueous solutions common organic solvents. Octadecylsilane H 3 Si(CH 2 ) 17 CH , functional silanes 11 Br, 9 CH=CH (CF 5 CF readily grafted. When performed on a mesoporous wafer, the perfluoro reagent yields superhydrophobic surface...

This paper reports the development of a thermal chemical vapor deposition process for pure cobalt from source precursor tricarbonyl nitrosyl incorporation in integrated circuit silicide applications. Studies were carried out to examine underlying mechanisms that control Co nucleation and growth kinetics, including effects key parameters on film purity, texture, morphology, electrical properties. For this purpose, systematic variations implemented substrate temperature, flow, hydrogen...

Abstract Dipodal silanes possess two silicon atoms that can covalently bond to a surface. They offer distinct advantage over conventional commonly used for surface modification in terms of maintaining the integrity coatings, adhesive primers, and composites aqueous environments. New nonfunctional functional dipodal with structures containing “pendant” rather than “bridged” organofunctionality are introduced. The stability surfaces environments prepared from hydrophobic alkyl functionality is...

A metal-organic chemical vapor deposition process has been developed for the growth of amorphous tungsten nitride thin films barrier layer applications in ultralarge scale integration copper interconnect schemes. The employs hexacarbonyl, [W(CO)6] and ammonia (NH3) as, respectively, nitrogen sources. Tungsten were produced within a wide window, including substrate temperature 200–350 °C, W(CO)6 flow rate 1–20 sccm, reactor pressure 0.2–0.5 Torr, NH3 rates 100–500 sccm. analyzed by x-ray...

Results are presented from a systematic study of the composition, texture, and electrical properties titanium nitride (TiN) films their performance as diffusion barrier in multilevel interconnect schemes ultralarge scale integration (ULSI) computer chip device structures. The were grown by low temperature (<450°C) inorganic chemical vapor deposition using tetraiodide source precursor ammonia hydrogen co‐reactants. TiN nitrogen‐rich., with iodine concentrations below 2 atom percent, displayed...

This paper reports the development of a methodology for growth epitaxial that uses Co films deposited by low temperature (390°C) chemical vapor deposition (CVD) from cobalt tricarbonyl nitrosyl as source precursor. CVD process exploits reaction kinetics associated with adsorption and decomposition on Si surfaces to ensure in situ, sequential an ultrathin interfacial oxide layer followed thin film single step. It is demonstrated this interlayer, consisting Si-O or Co-Si-O phase, inhibits...

It is widely accepted that a palpable spleen in the adult population always enlarged and pathological. The aim of this study was to assess validity statement. As routine, our protocol for liver-spleen studies includes liver pliability, which demonstrates level hemidiaphragms at full inspiration expiration, as well splenic size colloidal uptake. Sixteen hundred 99mTc sulphur colloid studies, had been performed Department, were reviewed. In 21 patients, who referred with "splenomegaly...

Unilateral hydrothorax occurring during peritoneal dialysis is well described and has been presumed to be secondary a pleuroperitoneal communication. Diagnosis of these communications usually requires invasive procedures. A non-invasive method confirmation abnormal pleuro-peritoneal communication using radionuclide scanning outlined. The occurrence this complication meant cessation type dialysis. However, patient illustrates that continuation possible.