About
Contact & Profiles
A5047649264
Research Areas
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Ferroelectric and Negative Capacitance Devices
Indian Institute of Technology Bombay
2023
The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent Dielectric Breakdown (TDDB) experiments. implemented in standalone Technology CAD (TCAD)-based deterministic stochastic versions. Different implementations show equivalence of the time kinetics stress passivation after stress. trigger for different type experiments introduced via single reaction parameter. against...
10.1109/ted.2023.3291333
article
EN
IEEE Transactions on Electron Devices
2023-07-20
10.1016/j.sse.2022.108586
article
EN
Solid-State Electronics
2023-01-03
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