A5055348165- ZnO doping and properties
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Radiation Effects in Electronics
- Analog and Mixed-Signal Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and Analog Circuit Testing
- Ocean Waves and Remote Sensing
- Low-power high-performance VLSI design
- Radiation Detection and Scintillator Technologies
- Marine and Coastal Research
- Fault Detection and Control Systems
- Internet of Things and Social Network Interactions
- Engineering Applied Research
- Technology and Data Analysis
- Tropical and Extratropical Cyclones Research
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Advanced DC-DC Converters
- GaN-based semiconductor devices and materials
- Enzyme Catalysis and Immobilization
- Ion-surface interactions and analysis
Konkuk University
2024-2025
Korea Institute of Ceramic Engineering and Technology
2023
Korea Institute of Ocean Science and Technology
2022
Konkuk University Medical Center
2022
Incheon National University
2022
Hyosung Corporation (South Korea)
2022
Korea Basic Science Institute
2009-2021
Gwangju University
2019
Korean Marketing Association
2017
Kyungpook National University
2017
We report the effects of growth ambient on photoluminescence (PL) emission properties ZnO films grown Si (100) by rf magnetron sputtering. Upon increasing O2/Ar+O2 ratio in growing ambient, visible room-temperature PL spectra was drastically suppressed without sacrificing band-edge intensity ultraviolet region. This tendency is estimated to be due reduction oxygen vacancies and zinc interstitials film induced improvement stoichiometry with respect high content, indicating that originates...
ZnO films were prepared on Si(100) substrates using rf magnetron sputtering and the correlations between growth conditions resultant film properties discussed. The intensity of visible emission related with intrinsic defects in was dramatically suppressed by increasing O2/Ar+O2 ratio growing ambient, which provides further evidence that luminescence originates from oxygen vacancy or Zn interstitial defects. It also certain exciton is strongly dependent size micro-crystallites forming film,...
In this article it is shown that high quality single crystalline Ga-doped ZnO (GZO) films could be achieved on ac-plane sapphire using conventional rf magnetron sputtering. High-resolution x-ray diffractometry, transmission electron microscopy (TEM), and scanning investigations clearly confirmed the GZO with low Ga doping levels up to 1wt% were of crystal, which featured by (0002) rocking curve as narrow 0.14°, symmetric six poles in pole figure, sharply defined spot pattern TEM diffraction...
Herein a method is proposed for engineering the electronic properties of diamond <italic>via</italic> surface hybridization with graphene.
ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural optical properties characterized in detail. It was observed that high quality single crystal are obtained when at temperature (>600 °C) low plasma power oxygen-rich ambient. Films 800 °C 75 W pure O2 showed sharp intense photoluminescence (PL) resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room PL), 23 (12 K PL) 280 arcsec (XRD), which is comparable...
Arsenic-doped p-type ZnO (p-ZnO:As) thin films were deposited by the magnetron sputtering technique. High-resolution low-temperature photoluminescence (PL) spectra of revealed emissions at 3.35 eV and 3.32 eV, representing neutral-acceptor-bound exciton transition free electron to acceptor level transition. Electroluminescence p–n diodes fabricated from p-ZnO:As/n-GaN heterostructure showed UV emission about 380 nm yellowish visible lights centered 600–650 nm, which resembled PL spectrum...
Zinc oxide (ZnO) films were grown on bulk ZnO substrates by the RF magnetron sputtering system. High resolution x-ray diffraction and photoluminescence spectra of homoepitaxial showed sharp intense peaks with full-width at half-maximum values 10–65 arcsec ((0 0 2) peak) 106–116 meV (band edge emission), respectively, representing crystalline qualities better than or comparable molecular beam epitaxy. It was also observed that Zn-face a higher quality those O-face wafers. Doping about 1 wt%...
Peroxiredoxin II (Prdx II, a typical 2-Cys Prdx) has been originally isolated from erythrocytes, and its structure peroxidase activity have adequately studied. Mice lacking Prdx proteins had heinz bodies in their peripheral blood, morphologically abnormal cells were detected the dense red blood cell (RBC) fractions, which contained markedly higher levels of reactive oxygen species (ROS). In this study, labeling experiment with thiol-modifying reagent biotinylated iodoacetamide (BIAM) II-/-...