A5015101071- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Radio Frequency Integrated Circuit Design
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Microwave Engineering and Waveguides
- VLSI and FPGA Design Techniques
- Advancements in PLL and VCO Technologies
- Low-power high-performance VLSI design
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- 3D IC and TSV technologies
- Analog and Mixed-Signal Circuit Design
- Semiconductor materials and devices
- Terahertz technology and applications
- Advanced Power Amplifier Design
- Embedded Systems Design Techniques
- Superconducting and THz Device Technology
- Advanced Optical Network Technologies
- Silicon Carbide Semiconductor Technologies
- Evolutionary Algorithms and Applications
- Advanced DC-DC Converters
- Numerical Methods and Algorithms
- Millimeter-Wave Propagation and Modeling
Nokia (France)
2017-2024
CEA Paris-Saclay - Etablissement de Fontenay-aux-roses
2021-2024
III V Lab
2014-2023
CEA LETI
2014-2023
Thales (France)
2012-2023
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2023
ORCID
2019
Thales (Australia)
2009-2017
Alcatel Lucent (Germany)
2002-2017
Nokia (Finland)
2017
We quantify, through simulations and experiments at 21.4 GBaud, the effect of in-band crosstalk on several advanced optical modulation formats, showing a 1-dB penalty bit-error ratio 1×10−3 from −18 dB, −24 −32 dB for QPSK, 16-QAM, 64-QAM, respectively.
The paper presents a new method for signal flowgraph analysis of large electronic networks. A hierarchical decomposition approach is realized using the so-called upward decomposed network. This allows fully symbolic network formulas to be obtained in time linearly proportional size multiconnection characterization, suitable analysis, has been defined and used topological formulas. Examples scale networks are discussed. can obtain solutions linear systems equations.
We report on an on-off keying intensity-modulation and direct-detection C-band optical transceiver capable of addressing all datacenter interconnect environments at well beyond 100 Gbaud. For this, the transmitter makes use two key InP technologies: a 2:1 double heterojunction bipolar transistor selector multiplexer monolithically integrated distributed-feedback laser traveling-wave electro-absorption modulator, both exceeding 100-GHz 3-dB analog bandwidth. A preamplified 110-GHz PIN...
We demonstrate a 222 GBd on-off-keying transmitter in short-reach intra-datacenter scenario with direct detection after 120 m of standard single mode fiber. The system operates at net-data rates >200 Gb/s OOK for transmission distances few meters, and >177 over m, limited by chromatic dispersion the high symbol rate is enabled high-bandwidth plasmonic-organic hybrid Mach-Zehnder modulator on silicon photonic platform that ribbon-bonded to an InP DHBT 2:1 digital multiplexing selector....
We report on the development of a submicron InP DHBT technology, optimized for fabrication ges50-GHz- clock mixed-signal ICs. In-depth study device geometry and structure has allowed to get needed performances yield. Special attention been paid critical thermal behavior. Various size devices have modeled using UCSD- HBT equations. These large signal models design 50-GHz clocked 50 G Decision 100 Selector circuits. The high quality measured characteristics demonstrates suitability this...
To fulfill the functionality demands from fast developing optical networks, a hybrid integration approach allows for combining advantages of various material platforms. We have established polymer-based platform (polyboard), which provides flexible input/ouptut interfaces (I/Os) that allow robust coupling indium phosphide (InP)-based active components, passive insertion thin-film-based elements, and on-chip attachment fibers. This work reviews recent progress our polyboard platform. On...
We report on an ultrahigh-speed PAM-based IM/DD optical subsystem featuring compact signal generation and tractable digital-processing complexity. The proposed transceiver is based two main technologies: InP DHBT selector power DAC for electrical generation, a complexity-optimized receiver processing chain. show how the complexity of feed-forward equalizer can be considerably reduced by stacking <;3-symbol memory sequence estimator. Finally, we experimentally demonstrate successful recovery...
Single-wavelength, serial 103.125-Gb/s transmission over 1 km SSMF is demonstrated using intensity-modulation and direct-detection. The high-speed on-off-keying transmit signal severely bandwidth-limited by the channel but reliably detected as an electrical duo-binary signal.
We demonstrate a 56-GBd pulse-amplitude modulation-4 compact InP transmitter module integrating distributed feedback laser and an electro-absorption modulator, which exhibits 50-GHz bandwidth, >13-dB extinction ratio up to 1.5-mW output power. Successful amplifier-free 112-Gb/s transmission is performed over 2 km using low complexity three-taps equalization. also study the tradeoff between receiver equalizer length performance, show successful signal recovery with bandwidths as 18 GHz when...
We demonstrate an on-off keyed transmitter with direct detection, at record symbol rates of 204Gbaud and 140Gbaud, over 10km 80km, respectively, powered by a high-speed InP-based 2:1 selector travelling-wave electro-absorption laser-modulator.
We propose a novel co-packaged optical transceiver architecture capable of operating at 112 Gbaud per lane and scalable to 1.6 Tb/s capacity beyond for next generation 51.2T 102.4T digital switches.
We demonstrate the generation and detection of single-polarization 56-GBd PAM-8 PAM-4 signals using intensity modulation direct leveraging a novel high-speed high-output swing selector power DAC fabricated in an InP DHBT which does not require external driver. Considering 7% overhead hard-decision forward error control, we validate our design by transmitting 150 Gb/s net data rate signal based on over 2 km 100 4 standard single mode fiber without optical amplification. complement results...
The architecture and performances of a multilevel driver for pulse amplitude modulation (PAM) formats, designed fabricated in 0.7 µm InP double‐heterojunction bipolar transistor technology, are reported. part is based on power‐DAC which integrated with the multiplexing stage composed three 2:1 selectors. Up to 100 GS/s operation was validated PAM‐2, ‐4, ‐8 signals high were measured. In particular, PAM‐4 at 84 GBd PAM‐8 64 demonstrated with, respectively, 3.7 4 V pp differential output...
We demonstrate a single-polarization driver-free, direct-detection 56-GBaud PAM-8 transceiver enabled by high-speed selector power DAC fabricated in InP DHBT, and successfully transmit 168 Gbit/s line-rate over 2 km distance without optical amplification.
A real-time 56-GBaud PAM-4 serial optical transmission link over 2km SSMF is presented using in-house developed SiGe driver and clock-and-data recovery integrated circuits demonstrating BER values down to 2e-7.
This letter reports on a 108-GHz bandwidth 0.5- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of authors' knowledge, this 2:1 AMUX-driver shows unprecedented 1.9-V <sub xmlns:xlink="http://www.w3.org/1999/xlink">ppd</sub> 160-GSa/s 160-GBd non-return-to-zero (NRZ) and 2.4-V 100-GSa/s 100-GBd PAM-4...
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated 100Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The relies on use of an electro-optic polymer modulator hybrid integration InP laser diode InP-DHBT electronics with board. Evaluation is made at 80 through eye-diagrams BER measurements using a receiver module that integrates pin-photodiode electrical 1:2 demultiplexer. Error-free performance confirmed both revealing viability approach potential technology.
Power-digital-to-analog converters (DAC) circuits for high capacity and spectral efficiency optical transmitters are presented in this paper. They based on a 0.7-μm InP DHBT semiconductor process, of which main differentiating characteristics highlighted. We introduce the Power-DAC circuit concept, its usual architectures, we provide design details latest generation. Named SPDAC, it integrates multiplexing front-end blocks composed three 2:1-selectors. With architecture, input interface...
We report on the use of 4-Dimension coded modulation for short-reach interfaces. With low extra complexity, 4D-coded PAM4 enables a performance improvement when associated with low-latency and low-complexity FEC, as demonstrated by experimental results.
We demonstrate a 2 × 100 Gb/s transmitter and 4 receiver as the key components for multi-100-GbE 400-GbE optical interfaces in future intradata center networks. Compared to other approaches, two devices can provide significant advantages terms of number components, simplicity, footprint, cost, they are capable serial operation with nonreturn-to-zero on-off keying format directly at Gb/s. The is based on monolithic integration multimode interference coupler Mach-Zehnder modulators an...
We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> 400 GHz as well high fabrication yield homogeneity on 3-inch wafer. This technology is used for very speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing record. A 5.4-Vpp 100-Gb/s distributed differential...
This paper presents SCYMBAL, a switched-capacitor symbolic simulator. The adopted algorithm, computer implementation, and program performances in comparison with other well-known realizations are discussed. Accompanying tools the method of insertion integrated CAD system presented. A new methodology automated generation circuit structures using simulator concepts artificial intelligence is presented compared algorithmic approach.
We introduce a hybrid integration platform based on the combination of passive and electro-optic polymers. analyze optical physical compatibility these materials describe advantages that our is expected to have for development transmitters in terms operation flexibility speed. combine with InP electronics develop transmitter 22-nm tunability C-band potential serial non-return-to-zero on-off-keying directly at 100 Gb/s. investigate its transmission performance 80 Gb/s using dispersion...