Jaya Madan

ORCID: 0000-0003-4805-9258
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About
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Research Areas
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Conducting polymers and applications
  • Quantum Dots Synthesis And Properties
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Silicon and Solar Cell Technologies
  • Nanowire Synthesis and Applications
  • Organic Electronics and Photovoltaics
  • Semiconductor materials and interfaces
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Solid-state spectroscopy and crystallography
  • solar cell performance optimization
  • Analog and Mixed-Signal Circuit Design
  • Thin-Film Transistor Technologies
  • 2D Materials and Applications
  • Copper-based nanomaterials and applications
  • Advanced Photocatalysis Techniques
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Advanced Memory and Neural Computing
  • Advanced Thermoelectric Materials and Devices
  • MXene and MAX Phase Materials
  • ZnO doping and properties

Chitkara University
2018-2025

Institute of Engineering
2023

Sungkyunkwan University
2022

CSIR National Physical Laboratory of India
2022

Trench (Germany)
2022

Delhi Technological University
2015-2018

Weatherford College
2018

University of Cambridge
1996-1997

In this paper, we have investigated device reliability by studying the impact of interface traps, both donor (positive charges) and acceptor (negative charges), present at Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface, on analog/RF performance linearity distortion analysis heterogeneous-gate-dielectric gate-all-around tunnel FET (HD-GAA-TFET), which is used to enhance tunneling current TFET. Various figures merit such...

10.1109/tdmr.2016.2564448 article EN IEEE Transactions on Device and Materials Reliability 2016-05-06

Lead-free Cs2BiAgI6 has garnered a lot of research interest recently due to its suitability as potential absorber layer in the solar cell (SC) architecture owing low cost, good stability, and high efficiency. The main highlight this work includes photovoltaic (PV) performance enhancement double perovskite cells (PSCs) by optimizing optoelectronic parameters absorber, electron transport (ETL), hole (HTL), various interface layers. Solar Cell Capacitance Simulator One dimension (SCAPS-1D)...

10.1021/acs.energyfuels.3c00181 article EN Energy & Fuels 2023-02-17

Herein, we used TiO 2 as the ETL and CBTS HTL in a CsPbI 3 -based PSC optimized it using SCAPS-1D software, where final optimization of device gave maximum PCE 19.06%.

10.1039/d2nj06206b article EN New Journal of Chemistry 2023-01-01

CsSnI3 is considered to be a viable alternative lead (Pb)-based perovskite solar cells (PSCs) due its suitable optoelectronic properties. The photovoltaic (PV) potential of has not yet been fully explored inherent difficulties in realizing defect-free device construction owing the nonoptimized alignment electron transport layer (ETL), hole (HTL), efficient architecture, and stability issues. In this work, initially, structural, optical, electronic properties absorber were evaluated using...

10.1021/acsomega.3c00306 article EN cc-by-nc-nd ACS Omega 2023-06-14

The power conversion efficiency (PCE) of cesium lead halide (CsPbX3, X = l, Br, and Cl)-based all-inorganic perovskite solar cells (PSCs) is still struggling to compete with conventional organic–inorganic perovskites. A combined material device-related analysis much needed understand the working principle explore potential CsPbX3-based PSCs. Therefore, here, density functional theory (DFT) SCAPS-1D-based studies were reported evaluate photovoltaic (PV) performance CsPbBr3-based DFT first...

10.1021/acs.energyfuels.3c00035 article EN Energy & Fuels 2023-04-06

Cs3Bi2I9 as a solar absorber material is strong contender for lead-free perovskite cells (PSCs). The presence of bismuth (Bi) in leads to the origin interesting optoelectronic properties along with suitable optical band gap and high absorption coefficient. However, further analysis crystal structure, optical, electronic this required efficient photovoltaic (PV) applications. potential an layer (SCs) was first analyzed by performing density functional theory (DFT) calculations observe its...

10.1021/acs.energyfuels.3c00540 article EN Energy & Fuels 2023-05-05

Since the conversion efficiency of silicon (Si)-based solar cells stagnates at 26.7% in literature, extensive research and development activities are carried out on perovskite silicon-based tandem cells. However, presence lead (Pb) instability prevent their large-scale implementation photovoltaic industry. Therefore, it is important to replace hazardous material top design non-toxic perovskite–silicon The current work yields much-needed studies develop a perovskite–silicon-based cell. For...

10.1021/acsaelm.2c01574 article EN ACS Applied Electronic Materials 2023-01-20

Lead toxicity is a barrier to the widespread commercial manufacture of lead halide perovskites and their use in solar photovoltaic (PV) devices. Eco-friendly lead-free perovskite cells (PSCs) have been developed using certain unique non- or low-toxic materials. In this context, Sn-based identified as promising substitutes for Pb-based due similar characteristics. However, suffer from chemical instability, which affects performance PSCs. This study employs theoretical simulations identify...

10.1039/d3ra02910g article EN cc-by-nc RSC Advances 2023-01-01

Perovskite solar cells (PSCs) have become a possible alternative to traditional photovoltaic devices for their high performance, low cost, and ease of fabrication. Here in this study, the SCAPS-1D simulator numerically simulates optimizes CsPbBr

10.1039/d3ra02485g article EN cc-by-nc RSC Advances 2023-01-01

The great demand for renewable energy has greatly contributed to the development of solar cell industry. Recently, silicon cells have dominated world market. ease processing gives perovskite (PSCs) an advantage over conventional cells. Regular photovoltaics require expensive, multi-step processes accomplished in a specialized ultraclean-chamber facility at elevated temperature (>1000 °C) and highly vacuumed workspace. Hence, researchers industry focused on PSC as rival Despite this, highest...

10.1039/d2ra05957f article EN cc-by RSC Advances 2022-01-01

Nontoxic and inorganic lead-free double perovskite La2NiMnO6 (LNMO) has achieved tremendous attention as an absorber layer of a solar cell (SC) structure due to its outstanding optoelectronic properties support photovoltaic (PV) applications. In order check the feasibility LNMO potential SC material, structural, electronic, optical are computed within realm density functional theory (DFT). The energy band diagram confirms that is degenerate semiconductor with indirect gap (Eg) ∼0.58 eV....

10.1021/acs.energyfuels.3c02361 article EN Energy & Fuels 2023-08-11

This present work emphasizes the numerical modeling of lead-free methylammonium tin tri-iodide (MASnI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )-based perovskite solar cells (PSCs) under optimizing preconditions. The prior selection material MASnI is feasible for a more extended absorption spectrum due to smaller bandgap 1.3 eV than higher lead (MAPbI PSC and factor lesser toxicity. Furthermore, enhance efficiency device,...

10.1109/ted.2022.3165516 article EN IEEE Transactions on Electron Devices 2022-04-19

Tandem solar cells have higher efficiency than single-junction devices owing to their wide photon absorption range. A band gap (Eg) absorber absorbs the higher-energy photons in top cell. In contrast, a comparatively low material is utilized bottom cell absorb filtered low-energy photons. Consequently, thermalization and transparent energy losses are overshadowed by subcell (Topsc) (Bottomsc), respectively. However, achieve best from tandem design, choice of active Topsc Bottomsc plays an...

10.1021/acs.energyfuels.2c03973 article EN Energy & Fuels 2023-02-07

A comparative analysis along with the optimization of various parameters for 8 different Cs-halide perovskite absorber-based solar cells is performed using a SCAPS-1D simulator, where ZnO and CFTS are proposed as ETL HTL materials, respectively.

10.1039/d3nj00320e article EN New Journal of Chemistry 2023-01-01

The present work represents a comparative modeling and performance optimization of three device configurations: ITO/ZnO/Cs2BiAgI6/Spiro-OMeTAD/Au, ITO/ZnO/CIGS/Spiro-OMeTAD/Au, ITO/ZnO/Cs2BiAgI6/CIGS/Spiro-OMeTAD/Au. concern low light absorption by materials such as Cs2BiAgI6 CIGS limits its application absorber in photovoltaic devices. Nevertheless, the can be enhanced inclusion second active layer composed graded both Cs2BiAgI6/CIGS, which effectively boosts efficiency configuration. In...

10.1021/acs.energyfuels.3c01659 article EN Energy & Fuels 2023-07-03

Abstract Inorganic perovskite materials have drawn great attention in the realm of solar technology because their remarkable structural, electronic, and optical properties. Herein, we investigated strain-modulated electronic properties Sr 3 PI , utilizing first-principles density-functional theory (FP-DFT) detail. The SOC effect has been included computation to provide an accurate estimation band structure. At its Г(gamma)-point, planar molecule exhibits a direct bandgap 1.258 eV (PBE)....

10.1088/1402-4896/acfce9 article EN Physica Scripta 2023-09-25

Perovskite photovoltaics have an immense contribution toward the all-round development of solar cell. Apart from flexibility, stability, and high efficiency, more stress has been given to using lead-free as well eco-friendly, inexpensive materials in fabrication PSC devices. The utilization non-volatile material, such cesium tin iodide (CsSnI

10.1016/j.heliyon.2024.e24107 article EN cc-by-nc-nd Heliyon 2024-01-01

This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect transistor (TFET) with N± source pocket. The PNIN-GAA-TFET is examined by analyzing: 1) impact interface trap charge (ITC) density and polarity 2) temperature affect ability on analog/RF performance device. It realized that traps existing at Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> modifies flatband voltage and, thereby, alters analog RF...

10.1109/ted.2017.2670603 article EN IEEE Transactions on Electron Devices 2017-03-07
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