Siyuan Wan

ORCID: 0000-0003-4955-9887
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About
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Research Areas
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Advanced Condensed Matter Physics
  • Magnetic and transport properties of perovskites and related materials
  • MXene and MAX Phase Materials
  • Chalcogenide Semiconductor Thin Films
  • Multiferroics and related materials
  • Ferroelectric and Piezoelectric Materials
  • Solid-state spectroscopy and crystallography
  • Physics of Superconductivity and Magnetism
  • Single-cell and spatial transcriptomics
  • Topological Materials and Phenomena
  • Electronic and Structural Properties of Oxides
  • Quantum Dots Synthesis And Properties
  • Molecular Biology Techniques and Applications
  • Acoustic Wave Resonator Technologies
  • Phase-change materials and chalcogenides
  • Immune cells in cancer
  • Graphene research and applications
  • Quantum, superfluid, helium dynamics
  • Nonlocal and gradient elasticity in micro/nano structures
  • Magnetic properties of thin films
  • Optical properties and cooling technologies in crystalline materials
  • Advanced Memory and Neural Computing
  • Advanced Materials and Mechanics

Nanchang University
2022-2024

University of Electronic Science and Technology of China
2024

University of Science and Technology of China
2007-2023

Nanjing University
2021

Hefei National Center for Physical Sciences at Nanoscale
2016-2018

Microscale (United States)
2018

Hefei University
2018

Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics a long-standing challenge due to possible critical thickness effect. Van der Waals materials, thanks their stable layered structure, saturate interfacial chemistry and weak interlayer couplings, are promising exploring ultra-thin two-dimensional (2D) device applications. Here, we demonstrate switchable...

10.1039/c8nr04422h article EN Nanoscale 2018-01-01

Abstract High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In 2 Se 3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, effect hybrid ferroelectric field‐effect transistor (FeFET) made of and graphene demonstrated. The resistance the channel FeFET effectively controllable retentive due to...

10.1002/adfm.201808606 article EN Advanced Functional Materials 2019-02-25

Abstract Spatial transcriptomics (ST) technologies detect mRNA expression in single cells/spots while preserving their two-dimensional (2D) spatial coordinates, allowing researchers to study the distribution of transcriptome tissues; however, joint analysis multiple ST slices and aligning them construct a three-dimensional (3D) stack tissue still remain challenge. Here, we introduce architecture characterization by deep learning (SPACEL) for data analysis. SPACEL comprises three modules:...

10.1038/s41467-023-43220-3 article EN cc-by Nature Communications 2023-11-22

Making an oxide-layered antiferromagnet Antiferromagnetism, a state of matter where ordered neighboring spins point in opposite directions, can be engineered layered heterostructures, which affords control over their properties. Doing so oxide heterostructures is tricky because the necessary ferromagnetism constituent layers may not survive thinning to nanometer thicknesses. Chen et al. overcame this materials challenge by finding and growing right combination substrate, magnetic, insulating...

10.1126/science.aak9717 article EN Science 2017-07-14

The electric dipole locking effect observed in van der Waals (vdW) ferroelectric α-In2Se3 has resulted a surge of applied research electronics with nonvolatile functionality. However, tunnel junctions advantages lower power consumption and faster writing/reading operations have not been realized α-In2Se3. Here, we demonstrate the tunneling electroresistance lateral β/α/β In2Se3 heterojunction built by local laser irradiation. Switchable in-plane polarizations vdW control conductance device...

10.1021/acsami.2c04032 article EN ACS Applied Materials & Interfaces 2022-05-27

Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi-one-dimensional ZrS3 nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting strong...

10.1021/acsami.3c00273 article EN ACS Applied Materials & Interfaces 2023-03-22

Abstract Precise control of quantum structures in hybrid nanocrystals requires advancements scientific methodologies. Here, on the design tunable CsPbBr 3 /Cs 4 PbBr 6 dots are reported by developing a unique discrete phase transformation approach Cs nanocrystals. Unlike conventional systems that emit solely green region, this current strategy produces adjustable luminescence blue (450 nm), cyan (480 and (510 nm) regions with high photoluminescence yields up to 45%, 60%, 85%, respectively....

10.1002/advs.202401973 article EN cc-by Advanced Science 2024-06-21

Abstract 2D layered materials with low crystal symmetries exhibit unique anisotropic physical properties. Here the systematic studies on optical modulation effects of such to isotropic in their stacked van der Waals (vdW) heterostructures are reported. By applying angle‐resolved polarization spectroscopic characterizations MoS 2 /ZrS 3 vdW heterostructure, periodic intensity variations Raman scattering and photoluminescence (PL) emission modes monolayer observed, which closely correlated...

10.1002/adom.202201030 article EN Advanced Optical Materials 2022-07-11

Abstract Moiré superlattices in twisted van der Waals homo/heterostructures present a fascinating interplay between electronic and atomic structures, with potential applications optoelectronic devices. Flexoelectricity, an electromechanical coupling electric polarization strain gradient, is intrinsic to these because of the lattice misfit at scale. However, due its weak magnitude, effect flexoelectricity on moiré ferroelectricity has remained underexplored. Here, role shaping modulating...

10.1002/adma.202410563 article EN Advanced Materials 2024-10-04

Sliding ferroelectricity enables materials with intrinsic centrosymmetric symmetry to generate spontaneous polarization via stacking engineering, extending the family of ferroelectric and enriching field low-dimensional physics. Vertical domains, where is perpendicular atomic motion, have been discovered in twisted bilayers inversion broken systems such as hexagonal boron nitride, graphene, transition metal chalcogenides. In this study, we demonstrate that breaking also induces lateral polar...

10.1021/acs.nanolett.4c03914 article EN Nano Letters 2024-10-14

Two-dimensional (2D) FenGeTe2, with n = 3, 4, and 5, has been realized in experiments, showing strong magnetic anisotropy enhanced critical temperature (Tc). The understanding of its is crucial for the exploration more stable 2D magnets spintronic applications. Here, we report a quantitative reconstruction magnetization magnitude direction ultrathin Fe4GeTe2 using nitrogen vacancy centers. Through imaging stray fields, identified spin-flop transition at approximately 80 K, resulting change...

10.1021/acs.nanolett.4c00795 article EN Nano Letters 2024-05-06

Controlling functionalities in oxide heterostructures remains challenging for the rather complex interfacial interactions. Here, by modifying interface properties with chemical doping, we achieve a nontrivial control over ferromagnetism ultrathin La0.67Ca0.33MnO3 (LCMO) layer sandwiched between CaRu1–xTixO3 [CRTO(x)] epilayers. The Ti doping suppresses electron transfer from CRTO(x) to LCMO side; as result, steadily decreased Curie temperature increasing x, 262 K at x = 0 186 0.8, is...

10.1021/acsami.6b13158 article EN ACS Applied Materials & Interfaces 2016-11-28

Abstract Spatial transcriptomics (ST) technologies detect mRNA expression in single cells/spots while preserving their two-dimensional (2D) spatial coordinates, allowing researchers to study the distribution of transcriptome tissues; however, joint analysis multiple ST slices and aligning them construct a three-dimensional (3D) stack tissue still remain challenge. Here, we introduce architecture characterization by deep learning (SPACEL) for data analysis. SPACEL comprises three modules:...

10.21203/rs.3.rs-2411530/v1 preprint EN cc-by Research Square (Research Square) 2023-01-05

We report the measurements of electron paramagnetic resonance (EPR) on powder samples La1−xCaxMnO3 (LCMO) at commensurate carrier concentrations x = N/8 (N 1,2,3,4,5,6, and 7) within temperature range 100 K≤T≤450 K. It is found that mapping EPR linewidth ΔH g-factor shows an electron–hole asymmetry in insulating regime LCMO phase diagram. The drop with decreasing resembles contour ferromagnetic transition curve diagram, while isothermal becomes narrowest 3/8 due to predominant double...

10.1088/0953-8984/19/19/196213 article EN Journal of Physics Condensed Matter 2007-04-19

An unambiguous antiferromagnetic interlayer exchange coupling (IEC) is realized in all-perovskite oxide La0.7Sr0.3MnO3(LSMO)/SrRu1-xTixO3(SR1-xTxO) (x < 0.3) superlattices above the Curie temperature of SR1-xTxO spacer layer, which different from traditional interfacial coupling. For 0.3 ≤ x 0.5, behave as a ferromagnetic Meanwhile, this IEC between LSMO layers across can be further modulated by changing thickness spacer. Combining high LSMO, these findings may have potential...

10.1063/1.4976509 article EN Applied Physics Letters 2017-02-20

In article number 1808606, Jianyong Xiang, Hualing Zeng, and co-workers present a prototype ferroelectric field-effect transistor consisting of van der Waals interacted atomic layers only. The non-volatile functionality stems from ultra-thin α-In2Se3, an emergent two-dimensional semiconductor. binary logic bit “0” “1” can be encoded stored in the device with out-of-plane electric polarizations.

10.1002/adfm.201970136 article EN Advanced Functional Materials 2019-05-01

High-quality c-axis oriented La2CuO4 films were prepared by an off-axis magnetron sputtering method on a LaSrAlO4(001) substrate. After chemical oxidation treatment at room temperature using NaClO as the oxidizing agent, La2CuO4+δ show superconducting transition around 28 K. The elongation of follows square-root law with increasing time, while full-width half-maximum (FWHM) for rocking curve measured (006) reflection shows linear increase. A strong delocalization behavior charge carriers is...

10.1088/0953-2048/20/8/025 article EN Superconductor Science and Technology 2007-07-26

Laser irradiation is a powerful tool in inducing changes lattice structures and properties of two-dimensional (2D) materials through processes such as heating, bleaching, catalysis, etc. However, the underlying mechanisms transformations vary dramatically different 2D materials. Here, we report structural transformation layered titanium trisulfide (TiS3) to disulfide (TiS2) after irradiation. We systematically characterized dependence on laser power, flake thickness, time, vacuum conditions...

10.1016/j.isci.2023.107895 article EN cc-by-nc-nd iScience 2023-09-11

Two-dimensional van der Waals ferromagnetic materials not only exhibit a plethora of magnetic phenomena under reduced dimensions but also enrich the realm nanoscale spintronics devices. Here, we identify spin reorientation (SR) transition from easy plane to uniaxial in Fe4GeTe2 as temperature decreases. Such occurs at TSR = 107 K for bulk samples determined through angle-resolved magnetization measurements and 125 15-nm-thick nanoflake evidenced by distinct responses residual resistance...

10.1021/acsaelm.4c00939 article EN ACS Applied Electronic Materials 2024-08-16

Recent experiments on layered {\alpha}-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders an excellent platform for developing two-dimensional (2D) layered-material based electronics with nonvolatile functionality. In this letter, we demonstrate non-volatile memory effect in a hybrid 2D ferroelectric field transistor (FeFET) made of ultrathin and graphene. The resistance graphene channel the FeFET is tunable retentive due to...

10.48550/arxiv.1810.05328 preprint EN other-oa arXiv (Cornell University) 2018-01-01
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