A5046353598- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- Thermal Radiation and Cooling Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Thermodynamics and Statistical Mechanics
- Solar Thermal and Photovoltaic Systems
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Advanced Semiconductor Detectors and Materials
- Spectroscopy and Quantum Chemical Studies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Quantum Dots Synthesis And Properties
- Photovoltaic Systems and Sustainability
- Quantum Information and Cryptography
- European and International Law Studies
- Rare-earth and actinide compounds
- Magnetic confinement fusion research
- Catalytic Processes in Materials Science
- Law and Political Science
- European Criminal Justice and Data Protection
- Sports, Gender, and Society
Heinrich Heine University Düsseldorf
2024
Nemours Children's Health System
2022
MicroLink Devices (United States)
2016-2019
Arizona State University
2013-2015
Max Planck Institute for Plasma Physics
2014
Max Planck Society
2014
The University of Texas at Dallas
2010-2012
Purdue University West Lafayette
2009
N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3/GaSb MOSCAPs exhibit strongly pinned C-V characteristics interface state density (Dit) whereas PEALD show unpinned (low Dit). reduction in Sb2O3 metallic Sb is suppressed samples due lower process...
We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, ground state of is ferromagnetic with TC 85 K. First principles calculations suggest that can be stabilized in sufficiently large biaxial tensile strain transition accompanied partial untilting CoO6 octahedra.
CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over the intensity of a GaAs/AlGaAs DH an identical layer structure design GaAs. Time-resolved gives Shockley-Read-Hall recombination lifetime 86 ns, which is more than one order magnitude longer that typical polycrystalline CdTe films. These findings indicate monocrystalline DHs effectively reduce surface recombination, have limited nonradiative...
Undoped InAs(100) wafers were either passivated with sulfur from a (NH4)2Sx solution or etched NH4OH and then characterized monochromatic x-ray photoelectron spectroscopy (XPS) before after in situ deposition of Al2O3 by atomic layer deposition. Sulfur passivation minimized oxidation. Trimethyl aluminum (TMA) exposure reduced trivalent indium arsenic oxidation states. The In1+ chemical state persisted while elemental remained at the Al2O3/InAs interface prior to TMA possibly mixture As–As...
Sunlight-generated hot-carrier transport in strongly absorbing direct band-gap GaAs---among the most optimal of semiconductors for high-efficiency solar cells---is simulated with an accurate full-band structure self-consistent Monte Carlo method, including short- and long-range Coulomb interaction, impact ionization, optical acoustic phonon scattering. We consider ultrapure 100-nm-thick intrinsic GaAs absorber layer designed quasiballistic carrier that achieves complete photon absorption...
MicroLink Devices has developed two-terminal monolithic three-junction (3J) GaInP/GaAs/GaInAs epitaxial liftoff (ELO) solar cells with certified 37.75 ± 0.53% AM1.5G 1-Sun power conversion efficiency at 25°C. Additionally, is developing four-junction (4J) ELO based on GaInP/GaAs/GaInAs/GaInAs subcells a peak preliminary AM0 of 34.31%. All these were manufactured entirely production tools and processes reusable 150 mm diameter GaAs substrates.
MicroLink Devices has developed triple-junction (3J) GaInP/GaAs/GaInAs epitaxial lift-off (ELO) 20 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> solar cells achieving >3 kW/kg specific power and >30% AM0 (>34% AM1.5G) 1-Sun conversion efficiency. These were manufactured using volume mass-production tools processes. Preliminary reliability testing of bare laminated arrays showed no appreciable degradation.
A modeling study has been undertaken to compare CdTe versus GaAs solar cells in order explore and forecast the possible evolution of cell performance while using as a benchmark. complementary experimental comparison two almost identical MgCdTe/CdTe/MgCdTe AlGaAs/GaAs/AlGaAs double-heterostructure (DH) samples grown by MBE guided modeling. Both DH give strong photoluminescence at room temperature (RT) time-resolved measurements reveal 50 ns carrier lifetime RT for sample. The results based on...
A thinned four-junction (4J) 1.88 eV GaInP/1.41 GaInAs/0.92 GaInNAs(Sb)/0.66 Ge solar cell is analyzed here versus the benchmark optically thick GaInP/GaInAs/Ge three-junction (3J) cell. Despite purposefully reducing one sun AM1.5D current density to 12.4 mA cm−2 in III–V subcells and 13.6 bottom subcell (1.2 excess density) using less than 1.0 bandgap for third subcell, ∼3% higher theoretical power conversion efficiency possible along with ∼27% parasitic resistive (I2R) loss ∼45%...
Low-intensity high-temperature solar cells that operate effectively in the atmosphere of Venus at various altitudes and also survive on 465 °C surface are being developed. Thermal stability, current–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V</i> ), external quantum efficiency measurements GaInP/GaAs double-junction presented. Solar-cell modeling under atmospheric conditions is used to design optimum solar-cell structure.
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Abstract Low‐intensity high‐temperature (LIHT) solar cells are needed for extended photovoltaic power generation in both the lower atmosphere as well at surface of Venus. Double‐junction GaInP/GaAs that may be able to operate and survive, with suitable encapsulation, several weeks on 465°C Venus have been developed. These optimized operation under spectrum, which is different from Earth.
This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and chemistry n-type p-type GaSb(100) MOS capacitors made with ALD Plasma Enhanced (PEALD) Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...
Direct bandgap InP, GaAs, CdTe, and Ga0.5In0.5P solar cells containing backside mirrors as well parasitically absorbing substrates are analyzed for their limiting open circuit voltage power conversion efficiency with comparison to record cells. From the principle of detailed balance, it is shown quantitatively that mirror have greater than substrate counterparts. Next, radiative recombination coefficient maximum lifetime GaAs calculated compared nonradiative Auger Shockley-Read-Hall (SRH)...
Carefully engineered coherent quantum states have been proposed as a design attribute that is hypothesized to enable solar photovoltaic cells break the detailed balance (or radiative) limit of power conversion efficiency by possibly causing radiative recombination be suppressed. However, in full compliance with principles statistical mechanics and laws thermodynamics, specially prepared do not allow cell—a threshold energy device—to exceed efficiency. At condition given steady-state open...