A5082543121- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced MEMS and NEMS Technologies
- Advanced Photonic Communication Systems
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Mechanical and Optical Resonators
- Acoustic Wave Resonator Technologies
- Force Microscopy Techniques and Applications
- Microwave Engineering and Waveguides
- Advanced Optical Network Technologies
- Modular Robots and Swarm Intelligence
- Advanced materials and composites
- Radio Frequency Integrated Circuit Design
- Interactive and Immersive Displays
- Spacecraft Design and Technology
- Adhesion, Friction, and Surface Interactions
- Electrical Contact Performance and Analysis
- Energy Harvesting in Wireless Networks
- Quantum-Dot Cellular Automata
- 3D IC and TSV technologies
- Lubricants and Their Additives
- Advancements in Photolithography Techniques
- Optical Coatings and Gratings
Xiaomi (China)
2025
Southern University of Science and Technology
2025
Beihang University
2025
Kunsthochschule Berlin-Weißensee
2024
University of California, San Diego
2016
Oracle (United States)
2010-2016
Office of Diversity and Inclusion
2011
Rockwell Automation (United States)
1996-2005
University of California, Los Angeles
2005
Cornell University
1989-2003
This paper reviews the recent progress in MEMS for radio frequency (RF) applications from a device perspective. RF devices reviewed include switches and relays, tunable capacitors, integrated inductors, mechanical resonators filters, some representative microwave millimetre-wave components. Important parameters are highlighted, as they have significant contributions to performance of final products which used. The challenges statuses these outlined discussed. intent this topical review is...
Low power wireless sensor networks provide a new monitoring and control capability for civil military applications in transportation, manufacturing, biomedical, environmental management, safety security systems. Wireless microsensor network nodes, operating at average peak levels constrained by compact sources, offer range of important challenges low methods. This paper reports advances systems spanning design, through mixed signal circuits, highly integrated RF interfaces. Particular...
We present a fully integrated, single-crystal silicon (SCS), micromachined tunable resonator with natural resonant frequency of nominally 1 MHz and room temperature quality factor approaching 10,000 in vacuum. The microelectromechanical systems (MEMS) process used to create the SCS resonators is compatible VLSI technology. These can be electrostatically excited turned simultaneously or independently both x y dimensions (in-plane), further enhanced third dimension excitation (out-of-plane, z)...
We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 error-free, bidirectional transmission is demonstrated.
The authors have developed an integrated silicon process that uses suspended single crystal (SCS) structures to fabricate x-y capacitive translators and high aspect ratio conical tips for scanned probe devices. nanomechanical device design the sequence include methods form tunneling tip pairs produce electrical isolation, contacts, conductors. Each occupies a nominal area of 40 mu m*40 m. These devices novel self-aligned tip-above-a-tip structure defined by electron beam lithography thermal...
A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional micromechanical structures on a silicon substrate. Patterned are formed in dioxide trenches by nucleation and growth of from the bottom trench. Examples shown for single-crystal silicon, thin films silicon-implanted, layers. This high deposition-rate CVD had been greater than 4 μm thick. Tungsten patters with features 0.3 × 0.6 fabricated using electron beam lithography. As an example...
Bottom-up microfabrication based on vapor-phase depositions (e.g., sputtering and atomic layer deposition) requires patterning resists that can endure the parasitic thermal treatment during deposition. Conventional polymeric encounter removability issues due to thermally induced carbonization at interface, while emerging molecular face challenges of hermeticity shape retention in bulk. Here, we introduce a paste-like resist with high interfacial bulk stability, which leads multifaceted...
Abstract An electrochemical composite polishing technology based on advanced oxidation processes (AOPs) was proposed to achieve efficient of SiC. In this study, ball-on-disk friction and wear experiments were carried out study the tribological behavior SiC under different slurries (H2O, H2O2 Na2S2O8). Our found that Na2S2O8 systems significantly enhance material removal effect, average COF rate increase with oxidizability environmental medium. The introduction an electric field increases...
Through the exploration of plant motion, this paper introduces a method called Metaphor Ring, which proposes use metaphor to define types information that can be conveyed through shape-changing interfaces inspired by motion. To put into practice, presents five potential cases soft robotics technology apply motion enhance user experience and convey in more intuitive natural way Each physical object provides 2-3 dynamic feedback, enabling presentation status data from computers home...
A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional cantilever beams on a silicon substrate. Two form micromechanical tweezers that move in three dimensions by the application of potential differences between beams, and high-deposition-rate CVD greater than microns thickness patterned SiO/sub 2/ trenches ion-implanted with silicon. Tweezer 200- mu m length cross section 2.7 m*2.5 close an applied voltage less 150 V. The magnitude deflection...
For the first time we demonstrate a fully self-contained photonic transceiver system on single die with monolithically integrated Ge photo-detectors. The allows error-free bidirectional 4times10 Gb/s WDM transmission using CMOS at each end of link.
We report the successful integration of MEMS microrelays with PHEMT MMIC in a single monolithic structure. The process we describe here allows us to build along GaAs devices without any sacrifice performance or yield either device. test structure used switches activate one two X-band LNAs. have an insertion loss less than 0.3 dB up 50 GHz while LNAs gain 20 and 1.1 NF at 9 GHz.
Rockwell Science Center (RSC) has designed and implemented a microelectromechanical-system- (MEMS-) based radio frequency switch experiment in miniature satellite format (picosat) as an initial demonstration of MEMS for space applications. This effort is supported by DARPA-MTO, the mission was conducted with Aerospace Corporation Stanford University partners. surface-micromachined metal contacting switches were manufactured used simple, yet informative, aboard satellites to study device...
We report on a comprehensive study of the 3D profile transformation process for microstructures silicon-on-insulator (SOI) substrates. Using hydrogen annealing, single crystalline microspheres (1 /spl mu/m radius), micropillars, and circular cantilever beams have been successfully demonstrated. The annealed Si exhibits surface roughness 0.26 nm. A theoretical model is presented mass transport process, parametric dependence temperature pressure characterized. used this to fabricate...
The Educational Adaptive-optics Solar Telescope at the Shanghai Astronomy Museum has been running routine astronomical observations since 2021. It is a 65-cm-aperture Gregorian solar telescope for scientific education, outreach, and research. system designed in an "open" format so that tower architecture can be integrated with it, visitors watch live from inside tower. Equipped adaptive optics, high-resolution imaging system, integral field unit spectro-imaging this obtain images TiO H-α...
A four-channel optical time slot interchange switching experiment operating at 2.5 Gbit/s is reported. The system based on a parallel switch fabric incorporating semiconductor laser amplifier gates and fibre delay lines. sensitivity penalty of 0.2 dB for straight through operation, 0.7 fully interchanged slots was observed.
The design, fabrication, and behavior of a microelectromechanical (MEM) capacitive membrane microwave switching device is described. element consists thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias. A signal switched off when between states. devices are electrostatically therefore ultra low power. They also have very linear with extremely distortion. switches show insertion loss 0.07 dB an isolation 35 at 40 GHz. variety RF phase shifters...
We have fabricated a novel, fully suspended, movable, deep-submicron single-crystal-substrate silicon (SCS) N-MOSFET using silicon-on-insulator (SOI) technology. The SOI technology has been developed and characterized for making 100 nm scale SCS cantilevers by oxidation mechanical beams tips (COMBAT). COMBAT FET designed specifically integration with nanoelectromechanical sensor other applications. entire process flow simultaneously fabricating tunneling as well the requires only five...
Silicon micromachining will be an important manufacturing technology for future-generation, high-performance optical and magnetic storage products. In this paper, we shall present recent results related to the design fabrication of silicon micromachined electromagnetic piggyback microactuators significantly increasing track density (and potentially optical) rigid disk drives.