A5073797876- Advanced Surface Polishing Techniques
- Diamond and Carbon-based Materials Research
- Ion-surface interactions and analysis
- Advanced machining processes and optimization
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Nuclear Physics and Applications
- Fusion materials and technologies
- Force Microscopy Techniques and Applications
- ZnO doping and properties
- Advanced Materials Characterization Techniques
- Advanced materials and composites
- Electron and X-Ray Spectroscopy Techniques
- Characterization and Applications of Magnetic Nanoparticles
- Tunneling and Rock Mechanics
- Ga2O3 and related materials
- Nuclear Materials and Properties
- Corrosion Behavior and Inhibition
- Adhesion, Friction, and Surface Interactions
- Vibration Control and Rheological Fluids
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced ceramic materials synthesis
- GaN-based semiconductor devices and materials
- Copper Interconnects and Reliability
- Lubricants and Their Additives
Guangdong University of Technology
2016-2025
Harbin Engineering University
2019-2022
Nanchang Hangkong University
2021
Agency for Science, Technology and Research
2012-2021
Institute of Materials Research and Engineering
2001-2021
University of East Asia
2020
John Wiley & Sons (United States)
2019-2020
Interface (United Kingdom)
2019-2020
Technology Holding (United States)
2018
University of Wollongong
2017
Abstract Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements and resolve any relevant measurement issues in amount thermal oxide on (100) (111) orientation silicon wafer substrates thickness range 1.5–8 nm. As result invitation participate this activity, 45 sets have been made different laboratories using 10 analytical methods: medium—energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS,...
Carbon-doped low k thin films were prepared by radio frequency plasma-enhanced chemical vapor deposition at 400°C from polymerization of tetramethylsilane (4MS) and copolymerization silane precursor, with nitrous oxide as the oxidant gas. Copolymer 4MS precursor show much higher rates than polymer 4MS, if all other parameters are kept same. The addition can significantly promote plasma 4MS. structure composition these characterized using Fourier transform infrared X-ray photoelectron...
Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via Fenton reaction through an applied electric field, which subsequently influences formation and removal oxide layer on workpiece surface, thereby impacting overall quality rate. This study employs Pin-Disk friction wear experiments to investigate material behavior single-crystal GaN during electro-Fenton polishing. Utilizing a range analytical techniques, including coefficient (COF)...
Abstract Electrochemical mechanical polishing (ECMP) technology can effectively enhance the material removal rate and surface quality of single-crystal silicon carbide (SiC). However, mechanism ECMP on SiC has not been thoroughly studied. This research employs a ball-on-disk friction wear method to evaluate effects different electrolyte solutions (strong acid, strong base, neutral electrolyte)and concentrations electrochemical anodic oxidation reaction single crystal carbide. Additionally,...
The third-generation semiconductor single-crystal silicon carbide (SiC), as a typical difficult-to-machine material, improves the chemical reaction rate on SiC surface during polishing process, which is key to realizing efficient mechanical (CMP). In this paper, new core-shell structure Fe3O4@MIL-100(Fe) magnetic catalyst was successfully synthesized, can effectively improve procesSs. characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoelectron spectroscopy...