A5021434308- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- Electromagnetic Compatibility and Noise Suppression
- GaN-based semiconductor devices and materials
- Advancements in PLL and VCO Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Full-Duplex Wireless Communications
- Silicon Carbide Semiconductor Technologies
- Millimeter-Wave Propagation and Modeling
- Advanced DC-DC Converters
- Energy Harvesting in Wireless Networks
- Electrostatic Discharge in Electronics
- Photonic and Optical Devices
- Analog and Mixed-Signal Circuit Design
- Wireless Power Transfer Systems
- PAPR reduction in OFDM
- Antenna Design and Analysis
- Advanced Antenna and Metasurface Technologies
- 3D IC and TSV technologies
- Microwave and Dielectric Measurement Techniques
- Acoustic Wave Resonator Technologies
- Semiconductor Lasers and Optical Devices
Boehringer Ingelheim (Austria)
2022-2024
Technische Universität Berlin
2010-2019
Fraunhofer Institute for Production Systems and Design Technology
2009-2018
Hamburg University of Technology
2018
Universität Hamburg
2018
Ferdinand-Braun-Institut
2012-2017
First Technical University
2013
Siemens (Germany)
1985-1988
Mutations in the Kirsten rat sarcoma viral oncogene homolog (KRAS) protein are highly prevalent cancer. However, small-molecule concepts that address oncogenic KRAS alleles remain elusive beyond replacing glycine at position 12 with cysteine (G12C), which is clinically drugged through covalent inhibitors. Guided by biophysical and structural studies of ternary complexes, we designed a heterobifunctional small molecule potently degrades 13 out 17 most alleles. Compared inhibition, degradation...
A complete frequency response analysis of the Doherty amplifier is presented with conventional output combining network consisting two quarter-wavelength <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(\lambda /4)$</tex></formula> transmission lines at a center Notation="TeX">$f_{0}$</tex> </formula> . Expressions for power and efficiency were derived over whole dynamic range any...
The yellow mealworm (Tenebrio molitor L., Coleoptera: Tenebrionidae) is an edible insect and due to its ubiquitous occurrence the frequency of consumption, a promising candidate for cultivation production on industrial scale. Moreover, it first be approved by EFSA 2021 following Novel Food Regulation. Industrial mealworms necessitates optimized processing techniques, where drying as postharvest procedure utmost importance quality final product. focus present study was analyse chemical...
Despite the high prevalence of cancers driven by KRAS mutations, to date only G12C mutation has been clinically proven be druggable via covalent targeting mutated cysteine amino acid residue (1). However, in many cancer indications other such as G12D and -V, are far more prevalent small molecule concepts that can address a wider variety oncogenic alleles clinical demand (2). Here we show single used simultaneously potently degrade 13 out 17 most alleles, including those not yet tractable...
This paper presents a truly balanced push-push frequency doubler. The novel concept is based on two lumped quadrature couplers that provide signaling for doubler cells. As consequence, the output signal inherently and lossy transformer can be avoided. Hence, higher power efficiency achieved. proof of concept, K-band implemented in 65 nm CMOS technology. At 0 dBm input power, circuit delivers 5 with more than 6 % PAE. chip draws 26 mA from 1.2 V supply total area 0.85×0.55 mnr <sup...
This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as power stage. A large-signal table-based model has been developed and verified for device by comparison with measurements. novel choke structure was obtain high dc isolation low RF loss over full bandwidth. No impedance transformer at all. Broad-band input output matching networks shunt feedback topology were introduced fulfill bandwidth requirements. Typical...
In this work a broad-band class E power amplifier (PA) is designed, manufactured and measured. 400 MHz bandwidth with center frequency of 800 was realized using GaN HEMT device. A novel easy circuit topology proposed for bandpass filter integrated output matching network. Different types are discussed, suitable chosen design equations shown. maximum drain efficiency 87.8 % (PAE = 80.6 %) observed. Maximum 49 W measured 16.3 dB gain at the 1 compression point.
This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating effect frequency-sensitive impedance inverters over band. Suitable choice device size ratio as well harmonic load tuning at and maximum power operations were also considered, resulting in superior performance targeted output ranged from 48.2 dBm to 49.6 dBm. 6 dB efficiencies η6dB≥53 % (power-added PAE≥50 %) measured 1.7–2.25...
This paper presents the first truly wireless 24-GHz round-trip time-of-flight local positioning frontend with an integrated CMOS transceiver. The transceiver in 130-nm technology features a novel receiver/transceiver switching concept, which reduces RF losses between receiver/transmitter and antenna drastically improves transmit/receive isolation. low-power chip was digital signal-processing unit mounted on circuit board to form system-level demonstrator of secondary radar node incorporating...
In this paper the design, implementation, and experimental results of a Ku-band 70W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two 250nm bare-die devices has been chosen to achieve considerably high saturated gain 15 dB over whole extended (13.75-14.5 GHz). The circuit was realized in hybrid microwave integrated technology on an alumina substrate. PA shows measured performance more than 50W output continuous-wave signal...
Nanocrystal suspensions proved to be a potent enabling principle for biopharmaceutics classification system class II drugs with dissolution limited bioavailability. In the example of itraconazole (ITZ) as model drug combined electrosteric stabilization using hydroxypropyl cellulose (HPC-SL), sodium dodecyl sulfate (SDS) and polysorbate 80 (PS80), impacts formulation process parameters dual centrifugal mill on material attributes such particle size, zeta potential, morphology, storage...
This paper provides an overview of RF-front-end architectures and technologies for future reconfigurable mobile systems (4G-systems). Aspects the historic evolution communication are given at beginning. With respect to re-configurability, three different system approaches introduced compared: switchable systems, with reusable components multifunctional components. Furthermore, front-end key like low noise amplifiers, voltage controlled oscillators mixers treated, particularly regard systems.
This paper describes a new hybrid wideband architecture of two-stage Wilkinson power combiner/divider using additional capacitive and inductive elements in both stages. The shows bandwidth from 0.3 GHz up to 2.8 with an insertion loss less than 0.2 dB isolation about 10 dB. combiner topology, design process results are being discussed
A monolithic power amplifier (PA) operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 SiGe-heterojunction bipolar transistor (HBT) technology, featuring npn transistors with and . two-stage cascode architecture chosen for implementation. Design techniques optimization procedure are explained detail. Measurements show a small signal gain of 18.8 dB output 14.5 dBm under 1 compression at 61 GHz. At this frequency, saturated 15.5 peak added...
The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> as well package. Based on this realistic device description change of continuous load impedances depending reference demonstrated. It shown that design flexibility predicted by theory decreases if transistor package taken into account....
A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-/spl Omega/ measurement system without microwave tuner is presented. The are determined correlation matrix technique by fitting measured figure active device. On-wafer experimental verification up to 26 GHz presented and comparison with tuner-based given. scaling rules have also been determined. Good agreement obtained between simulated results 2/spl times/20 /spl...
This work demonstrates a fully integrated 24 GHz CMOS receiver targeted for low power and compact wireless sensor nodes utilizing FMCW radar local positioning. The incorporates highly noise amplifier, passive mixer on-chip transformer balun single-to-differential conversion of LO. chip has been realized in 130 nm technology. At RF the measured performance includes gain 16.5 dB, figure 5.3 an input at 1 dB compression point -26 dBm IIP3 -15 dBm. complete consumes 18 mW from 1.2 V supply with...
This letter presents a novel approach to design highly efficient multioctave bandwidth power amplifiers (PAs). The fundamental load impedances are slightly detuned out of their optimum values reduce the in-band harmonics influence on output and power-added efficiency. matching network includes 4:1 planar Guanella transformer for wide low complexity. In frequency band 0.5-2.7 GHz, PA achieves 9.2 ± 1.2 dB gain more than 20-W power. drain efficiency varies from 56% 70% over bandwidth.
A complete analysis of the low-frequency (LF) noise is performed on resistive field-effect transistor (FET) mixers, where LF created due to self-mixing process local oscillator. First, a new scalable model for FETs in an ohmic channel bias regime (U/sub ds//spl ap/0 V) has been developed, which uses fluctuating resistances, instead voltage or current sources. Measurements hybrid single-ended mixer prove good accuracy proposed and reveal method distinguish between different Further...
In this paper, a 0.35–8 GHz, 5 W, linear power amplifier based on GaN HEMT die is reported. Load pull characterization was used to optimize the performance in operating bandwidth. 3D-EM simulations were also performed model coaxial 50 Ohm connections, bond wires and matching networks resulting an excellent agreement between measurements. Regarding performance, designed single stage PA has exhibited 9 ± 1 dB gain, output (Pout) of greater than 37 dBm (5 W), worst added efficiency (PAE) 20 %...
Crucial for limiting power consumption of the nodes in sensor networks is a strategy keeping sleep mode most time. Consequently, when and how to reactivate them key issue let become reality. This paper presents special wakeup receiver this task which utilizes concept two successive stages different complexity consumption. Always on will only be very simple stage consuming nW, activate slightly more complex some /spl mu/m, if confirms valid condition main transceiver activated.
In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is reported. Load-pull technique has been applied introduce compromising solution for the PA performance trade-off problem. Over whole bandwidth measured small signal gain of 14 ± 0.7 dB and an output return loss better than −10 have achieved. The input was − 10 up 3 GHz. Power linearity performances compared simulations resulting in very good agreement. At frequency spacing 100 kHz, minimum values IP3...
Special ultra-low-power wakeup receivers have been postulated repeatedly throughout publications in the sensor network community. This paper presents a fully integrated zero-bias detector BiCMOS technology, which can be used for construction of wakeup-receiver with -50 dBm sensitivity at standby current consumption order 100 nA. Operating frequency examined here was 2.4 GHz, but principle is inherently broadband.
The analysis, design, and evaluation of medium-voltage laterally diffused metal oxide semiconductor (LDMOS) transistors for wireless applications up to 6 GHz is presented. Using an optimized N-LDMOS transistor, power devices different transistor geometries were fabricated in a standard 0.25-μm bipolar complementary (BiCMOS) technology with without on-chip stabilization networks. influences the finger geometry networks on RF performance studied based small-signal large-signal on-wafer...