A5001986727- Advanced Fiber Laser Technologies
- Solid State Laser Technologies
- Laser-Matter Interactions and Applications
- Spectroscopy and Laser Applications
- Perovskite Materials and Applications
- Photonic Crystal and Fiber Optics
- 2D Materials and Applications
- Laser Design and Applications
- Diamond and Carbon-based Materials Research
- Nonlinear Optical Materials Studies
- Nanowire Synthesis and Applications
- MXene and MAX Phase Materials
- Photorefractive and Nonlinear Optics
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Orbital Angular Momentum in Optics
- Metal and Thin Film Mechanics
- Luminescence Properties of Advanced Materials
- Boron and Carbon Nanomaterials Research
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Carbon Nanotubes in Composites
- Advanced Thermoelectric Materials and Devices
- Graphene research and applications
- Thermal properties of materials
Shandong Normal University
2018-2025
Institute of Microelectronics
2024
Chinese Academy of Sciences
2024
Beihang University
2021-2023
Beijing University of Chemical Technology
2021-2022
Guangxi University
2021
MXenes, a new family of two-dimensional materials, were prepared by selective chemical etching method and the saturation absorption characteristics measured using Z-scan method. At 1.06 μm, passively Q-switched Nd:YAG ceramic laser was operated MXene Ti3C2T x as saturable absorber successfully for first time. an absorbed pump power 4.14 W, pulse repetition rate 186 kHz minimum width 359 ns. The maximal peak single-pulse energy 2.04 W 0.66 μJ respectively. This study demonstrates that MXenes...
An Er3+-doped CaF2-SrF2 mixed crystal was grown using the temperature gradient technique, and its laser characteristics were studied. In a compact linear cavity, continuous-wave output power of 712 mW obtained with highest slope efficiency 41.4%. Using semiconductor saturable absorber mirror, passive Q-switched mode-locked Er3+:CaF2-SrF2 emitting at 2729.5 nm demonstrated for first time, to best our knowledge. The maximum average 125 an absorbed pump 1.81 W, repetition rate envelope 4.17...
Indium Tin Oxide nanowire arrays (ITO-NWAs), as epsilon-near-zero (ENZ) materials, exhibit a fast response time and low saturable absorption intensity, which make them promising photoelectric materials. In this study, ITO-NWAs were successfully fabricated using chemical vapor deposition (CVD) method, the properties of material characterized in near-infrared region. Further, passively Q-switched all-solid-state lasers realized at wavelengths 1.0, 1.3, 2.0 µm as-prepared absorber (SA). To best...
ABSTRACT The monolayer WSe 2 material was utilized for a saturable absorber to create 2.7 μm passively Q‐switched pulse laser. maximal single energy 2.75 µJ, and the highest peak power measured approximately 2.53 W. As far as we know, this is first instance of being used passive Q‐switching operation in mid‐infrared. results provide favorable evidence mid‐infrared Q‐switcher show promise two‐dimensional materials ultrafast pulsed laser applications.
Perovskite-based memristors have attracted much attention in synaptic simulation due to their outstanding electrical properties and promising potential neuromorphic computing (NC). In this work, inorganic lead-free perovskite-based composed of Ag/Cs3Bi2–xLixI9–2x (CBLxI)/ITO (x = 0, 0.2, 0.4, 0.6) are fabricated, the properties, such as endurance, on/off ratio, retention time, determined. It is found that device with x 0.4 shows good characteristics, a set voltage −0.1 V time 104 s. The...
To the best of our knowledge, this is first time that a mid-infrared Er3+:CaF2-SrF2 laser has achieved continuous-wave mode-locked operation by semiconductor saturable absorber mirror. The emits maximum output power 93 mW at 2.73 µm with repetition rate approximately 69 MHz and demonstrates high signal-to-noise ratio around 71 dB. In addition, MgF2 birefringent plate was utilized to enable wavelength tuning laser, resulting in µm, 2.75 2.79 2.81 µm. These results demonstrate promising...
A new disordered crystal Nd:SrAl12O19 (Nd:SRA) with an Nd3+ doping concentration of 5% was successfully grown using the Czochralski method. diode-pumped Nd:SRA Q-switched laser operating at 1049 nm demonstrated for first time, to best our knowledge. Based on MXene Ti3C2Tx sheet, a high repetition rate 201 kHz and pulse width 346 ns were obtained when absorbed pump power 2.8 W. The peak single energy 1.87 W 0.65 μJ, respectively.
Nd,Gd:CaF2 single-crystal fibers (SCFs) of various Nd3+ and Gd3+ concentrations were grown by a modified temperature gradient technique (TGT) using home-designed multi-microchannel crucible. Powder Laue X-ray diffraction measurements indicated the SCFs consist pure monocrystalline CaF2 phase. Distributions rare earth dopants in are proven to be uniform both EDS spectroscopic measurements. Laser diode (LD) pumped continuous-wave (CW) laser output at ∼1.06 μm spectral region highest slope...
Ternary nitride semiconductors with tunable electronic structure and charge transport properties have attracted increasing attention as optoelectronic materials. The recently discovered ternary MgTMN2 (TM=Ti,Zr,Hf) are predicted to be nondegenerate visible-range optical absorption onsets. In the present study, structure, elastic properties, spectrum, dynamic stability of system been systematically studied by first-principles calculations based on density functional theory. These compounds...
This Nd:BG1-xSxO (Nd:BGSO) crystal was grown using the micro-pulling-down method, and continuous-wave laser operation of this demonstrated for first time, to best our knowledge. The maximum output power 1.038 W obtained under absorbed pump 3.01 W, which corresponds a slope efficiency 31.3%. Bismuth nanosheets were employed as saturable absorbers generate passively Q-switched Nd:BGSO laser. Stable pulses with shortest pulse width 376.5 ns repetition rate 136.6 kHz achieved at W. largest...
Thermal management becomes increasingly important in silicon gate‐all‐around (GAA) field‐effect transistor (FETs) for 3 nm technology node and beyond. The channel thermal conductivity significantly differs from bulk silicon. Precise determination of is crucial device evaluation optimization. This study investigates the nanowires, examining complex interplay between size orientation. conventional nonequilibrium molecular dynamics (NEMD) method used with standard Stillinger–Weber potential at...
A hundred-watt-level peak-power linearly polarized Ho,Pr:GdScO 3 laser with narrow pulses was first realized at ∼3 µm through a combination of theoretical simulation and experiment. This is the narrowest pulse width, highest peak power has been achieved in passively pulsed Ho,Pr co-doped to date. We narrow-pulsed µm, maximum 185 W shortest width 42 ns. further model built by simulating dynamic process mid-infrared (MIR) using coupled rate equations. The numerical results were fundamentally...