A5103213463- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Silicon Nanostructures and Photoluminescence
- Quantum-Dot Cellular Automata
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- 2D Materials and Applications
- Photonic Crystals and Applications
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
National Yang Ming Chiao Tung University
2020-2024
Institute of Electronics
2023
We report the fabrication and electrical characterization of single-hole transistors (SHTs), in which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self-organized tunnel barriers Si3N4. A combination lithographic patterning, sidewall spacers, selfassembled growth was used for fabrication. The core experimental approach is based on selective oxidation poly-SiGe spacer islands located at specially designed included-angle locations Si3N4/Si-trenches. By adjusting...
Abstract Beginning with our exciting discovery of germanium (Ge) spherical quantum-dot (QD) formation via the peculiar and symbiotic interactions Si, Ge, O interstitials, we have embarked on a journey vigorous exploration, creating unique configurations self-organized Ge-QDs/Si-containing layers. Our aim is to generate advanced Ge-QD photonic devices, while using standard, mainstream Si processing techniques. This paper summarizes portfolio innovative configurations. With emphasis both...
Starting with our remarkable discovery of spherical germanium (Ge) quantum dot (QD) formation, we have embarked on an exciting journey further discovery, all the while maintaining CMOS-compatible processes. We taken advantage many peculiar and symbiotic interactions Si, Ge O interstitials to create a novel portfolio electronic, photonic computing devices. This paper summarizes several these completely new counter-intuitive accomplishments. Using coordinated combination lithographic...
Abstract A heterostructure photodetector composed of few-layer NiPS 3 /WS 2 is made by using mechanical exfoliation and micro-nano fabrication techniques. The exhibits a broad-band response ranging from 405 800 nm wavelengths. Under the light illumination wavelength bias voltage -2 V, photoresponsivity 62.6 mA/W specific detectivity 8.59 × 10 jones. In addition, device demonstrates relatively fast with rise fall times 70 ms 120 ms. Theoretical calculation suggest that this excellent...
We report the formation of Ge quantum dots (QDs) with self-organized tunnel barriers and self-aligned electrodes, using a coordinated combination lithographic patterning self-assembled growth. The core experimental design is based on thermal oxidation poly-SiGe spacer islands located at included-angle location Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> /Si-trenches specially...
We report a novel self-organized approach for the fabrication of Ge-nanospherical (NP) gate/SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Ge xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> -recess channel heterostructures with raised source/drain using single oxidation step. By controlling width Si recess-trench, we are able to tune size NPs which essentially determines...
We report the first-of-kind scalability and tunability of Ge QDs that are controllably sized, closely coupled, self-aligned with control gates, using a combination lithographic patterning, spacer technology, self-assembled growth. The core experimental design is based on thermal oxidation poly-SiGe islands designated at each included-angle location designed Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N...
We demonstrated an effective method for lithographic patterning of a fanout-shaped Si nanotip array with nanometer-scale feature size/pitch by using combination overdose exposure, cold development, and layout design. optimized process conditions electron-beam exposure onto poly(methyl methacrylate) resist methyl isobutyl ketone development temperature (10 to −5 °C) produce dense nanotips large gradient fanout patterns. A circular minimum 15/30 nm high degree pattern fidelity, uniformity,...
We report Ge few-hole double quantum-dots (DQDs) integrable with single-hole transistors (SHTs) for high-sensitivity charge detection. DQDs 20 nm diameter are closely coupled via a 10 nm-thick Si barrier, inducing strong inter-QD coupling. Thanks to quantum confinement induced by self-organized, hard-wall barriers of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{Si}_{3}\mathbf{N}_{4}/\mathbf{SiO}_{2}$</tex> , SHT exhibits aperiodic...