A5111409761- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Software Reliability and Analysis Research
- Reliability and Maintenance Optimization
- Cryospheric studies and observations
- Conducting polymers and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Polymer Nanocomposite Synthesis and Irradiation
- Advanced Battery Materials and Technologies
- Fisheries and Aquaculture Studies
- CO2 Sequestration and Geologic Interactions
- Firm Innovation and Growth
- Methane Hydrates and Related Phenomena
- Landslides and related hazards
- Coastal and Marine Management
- Geochemistry and Elemental Analysis
- Supercapacitor Materials and Fabrication
- Geological formations and processes
- Statistical Distribution Estimation and Applications
- Climate variability and models
- Hydrocarbon exploration and reservoir analysis
- Software Engineering Research
- Electromagnetic wave absorption materials
- Extraction and Separation Processes
National Kaohsiung University of Applied Sciences
2006-2010
National Tsing Hua University
2004-2006
In this paper, we study the impact of software testing effort & efficiency on modeling reliability, including cost for optimal release time. This paper presents two important issues in reliability economics: effort, and efficiency. First, propose a generalized logistic testing-effort function that enjoys advantage relating work profile more directly to natural flow development, can be used describe possible patterns. Furthermore, incorporate into modeling, evaluate its fault-prediction...
Over the past 30 years, many software reliability growth models (SRGM) have been proposed. Often, it is assumed that detected faults are immediately corrected when mathematical developed. This assumption may not be realistic in practice because time to remove a fault depends on complexity of fault, skill and experience personnel, size debugging team, technique(s) being used, so on. During testing, practical experiences show mutually independent can directly removed, but dependent removed iff...
We consider two kinds of software testing-resource allocation problems. The first problem is to minimize the number remaining faults given a fixed amount testing-effort, and reliability objective. second testing-effort faults, have proposed several strategies for module testing help project managers solve these problems, make best decisions. provide systematic solutions based on nonhomogeneous Poisson process model, allowing specified expenditures each under some constraints. describe...
Rare earth elements are important resources and they can be widely used in smart phones, electric vehicles, home appliances, etc. Recently, countries around the world pay attentions to their own rare set policies cope with country's future development. Therefore, have obviously become valuable strategic materials. minerals mainly occurred placer depositions Taiwan. The literature on Taiwan is quite limited; there only a few studies characteristics of heavy sand deposits, about distribution...
This work examined the effects of bulk nitrogen in HfOxNy gate dielectric on current-conduction and charge trapping metal-oxide-semiconductor devices. The concentration profiles were adjusted by Hf target sputtered an ambient modulated flow. mechanisms film comprised various at low- high-electrical field dominated Schottky emission Frenkel–Poole emission, respectively. trap energy level involved Frenkel–Pool conduction was estimated to be around 0.8 eV. Smaller stress-induced leakage current...
Effects of the defects at high-/spl kappa/ dielectric/Si interface on electrical characteristics MOS devices are important issues. To study these issues, a low defect (denuded zone) Si surface was formed by high-temperature annealing in hydrogen atmosphere this paper. Our results reveal that HfO/sub x/N/sub y/ demonstrates significant improvement properties due to its amount interstitial oxygen [O/sub i/] and crystal-originated particles as well small roughness y//Si interface. The...
This work investigated the effects of interstitial oxygen [Oi] defects at Si(111) surface on current conduction and charge trapping metal-oxide-simiconductor devices with HfOxNy gate dielectric. Smaller leakage current, stress-induced (SILC) defect generation rate, attributable to decrease concentration HfOxNy∕Si interface, were observed for denuded zone. The current-conduction mechanism films low- high-electrical field was dominated by Schottky Frenkel–Poole emissions, respectively. trapped...
Effects of nitrogen concentration near the HfO x N y /Si interface on charge trapping properties metal–oxide–semiconductor (MOS) capacitors were investigated. The in gate dielectric was adjusted by sputtering Hf target a nitrogen-flow-modulated ambient. trapped charges are positive. mechanism related to relatively large stress-induced leakage current (SILC) at low electrical fields can be explained using trap-assisted tunneling. On other hand, small found high electric attributed electron...