A5077108508- Advancements in Photolithography Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Surface Polishing Techniques
- Nanofabrication and Lithography Techniques
- Low-power high-performance VLSI design
- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- Image Processing and 3D Reconstruction
- Civil and Structural Engineering Research
- Image Processing Techniques and Applications
- 3D IC and TSV technologies
- Mechanical and Optical Resonators
- VLSI and FPGA Design Techniques
- Geological Modeling and Analysis
- Soil Geostatistics and Mapping
- Advanced MEMS and NEMS Technologies
- Optical Coatings and Gratings
- Electronic Packaging and Soldering Technologies
- Advanced Fiber Laser Technologies
- Copper Interconnects and Reliability
- Plasmonic and Surface Plasmon Research
- Force Microscopy Techniques and Applications
- Parallel Computing and Optimization Techniques
- Electron and X-Ray Spectroscopy Techniques
- Orbital Angular Momentum in Optics
University of Pennsylvania
2016-2019
California University of Pennsylvania
2019
GenISys (Germany)
2014-2018
University of Delaware
2018
Pennsylvania State University
2016-2018
Millennium Engineering and Integration (United States)
2018
Central European Institute of Technology
2016
Brno University of Technology
2016
Center for Nanoscale Science and Technology
2016
Genesys (United States)
2014-2015
Quantum emitters such as the diamond nitrogen-vacancy (NV) center are basis for a wide range of quantum technologies. However, refraction and reflections at material interfaces impede photon collection, emitters' atomic scale necessitates use free space optical measurement setups that prevent packaging devices. To overcome these limitations, we design fabricate metasurface composed nanoscale pillars acts an immersion lens to collect collimate emission individual NV center. The metalens...
This article introduces in archival form the Nanolithography Toolbox, a platform-independent software package for scripted lithography pattern layout generation.The Center Nanoscale Science and Technology (CNST) at National Institute of Standards (NIST) developed Toolbox to help users CNST NanoFab design devices with complex curves aggressive critical dimensions.Using parameterized shapes as building blocks, allows rapidly nanoscale arbitrary complexity through scripting programming.The...
A new closed-form effective resistivity (rho <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) model as a function of line-edge roughness (LER), sidewall specularity p, and grain boundary scattering R is presented. There improved physical insight to increasing than previous models. The validated against former simulation data calibrated with electrical measurements fabricated Cu interconnect test structures exhibiting an average 14 nm...
Abstract Corrugated paper cardboard provides an everyday example of a lightweight, yet rigid, sandwich structure. Here we present nanocardboard, monolithic plate mechanical metamaterial composed nanometer-thickness (25–400 nm) face sheets that are connected by micrometer-height tubular webbing. We fabricate nanocardboard plates up to 1 centimeter-square size, which exhibit enhanced bending stiffness at ultralow mass ~1 g m −2 . The nanoscale thickness allows the completely recover their...
Every new VLSI technology generation has resulted in interconnects increasingly limiting the performance, area, and power dissipation of processors. Subsequently, it is necessary to devise efficient interconnect design techniques reduce impact on overall system design. New optimizations a wave-pipelined multiplexed (WPM) routing circuit are described this paper. These WPM circuits can be used with current repeater further delay, transistor and/or dissipation. For example, area constrained...
We present a new closed-form compact model for conductor resistivity considering size effects, line-edge roughness and CMP dishing. Using this model, Monte Carlo simulations quantify the impact of interconnect variations on maximum critical path delay distributions future technologies. Results indicate LER amplitudes start to become substantial percentage nominal effective line-width dimension (2016 2020), leading an increase in resistivity. Moreover, multi-core systems exhibit better...
Nanoscale geometry assisted proximity effect correction (NanoPEC) is demonstrated to improve (PEC) for nanoscale structures over standard methods, in terms of feature sharpness sub-100 nm structures. NanoPEC was implemented onto an existing commercially available pec software. Plasmonic arrays crosses were fabricated using regular PEC and NanoPEC, optical absorbance measured. Results confirm that the improved leads increased spectrum features. The authors also this method applicable...
It is well known that cold development yields higher contrast and improved exposure latitude particularly for ZEP520 from Zeon Chemicals. In this paper, the authors quantify effective process blur as a function of temperature. The our conditions were found to be 10, 42, 71 nm developer temperatures at −12, 21, 30 °C, respectively. Knowledge how tune can used in unique application. Instead using best possible blur, traded time. Optimizing e-beam time always desired while maintaining target...
Designs patterned by electron beam lithography without applying process effect correction exhibit overexposed dense features and underexposed sparse for most practical exposure scenarios. This is typified the limited latitude of hydrogen silsesquioxane resist on silicon-on-insulator substrates used silicon photonics, which commonly display very high density (vertical grating couplers, ring resonators) mixed with (inverse tapered waveguides, lone waveguides) in a single pattern. The authors...
Increasing volume using larger substrates with decreasing process margins create new challenges for advanced packaging applications. Key step and repeat camera technology continues being introduced the mass production of high density interconnects used 2.5D 3D technologies that will provide solutions encountered. A 2X reduction stepper unique features achieves tighter specifications needed many applications printed on large substrates. field-of-view optical projection system utilizes...
Shape positional accuracy is a ubiquitous challenge when writing critical features using electron beam (e-beam) lithography. Positional can be particularly important patterning for dense pattern arrays often found in plasmonic device structures. These contain structures critically placed within few tens or hundreds of nanometers apart from one another, whereby poor on the same order magnitude would impact overall performance. The sources are varied an e-beam lithography system and include,...
Patterns written by laser direct write have a critical dimension (CD) bias dependence on the dose similar to other methods, such as electron beam lithography, which can be explained exposure intensity distribution (EID) of beam. In this study, comprehensive model based EID is proposed understand pattern CD dose, known latitude. This was supported results tests MicroChem S1800 resist an Si wafer using Heidelberg DWL66+ writer. The latitudes patterns at both micrometer and submicrometer scale...
Power reduction techniques are a critical issue in the design of today's ULSI chips. This paper is concerned with methods to characterize capacitive load on POWER4 on-chip global clock distribution [1], which large contributor overall chip power dissipation. A characterization needed because contributions devices and interconnections typically overestimated not well understood for high performance microprocessors. One problem that results from lack this information excessively dissipation...
We have developed a platform-independent software package for designing nanometer scaled device architectures. The Nanolithography Toolbox is applicable to broad range of design tasks in the fabrication microscale and nanoscale devices.
The isofocal dose in electron beam lithography (EBL) is defined as the that results same feature size independent of effective blur (blureff), which result a combination resist processing, spot size, focus, forward scattering, etc., contributes to final image. In other words, blureff changes still obtained while using dose. This phenomenon clearly demonstrated EBL simulation when varying blureff. this work, authors identify for given process consisting 200 nm ZEP520A from ZEON Chemicals atop...
This work examines the isofocality of four commercially available positive resists for electron beam lithography (EBL) at 100 keV: AR-P 6200 (commercially known as CSAR 62) by AllResist GmbH, ZEP520A Zeon Corp., polymethylmethacrylate 950 A4 (950k molecular weight in anisole) MicroChem and mr-PosEBR 0.3 Micro Resist Technology GmbH. Isofocality is operating point a given process where specific dose (namely, isofocal dose) results same feature size (isofocal feature) independent effective...
Electronic beam lithography (EBL) is commonly used for patterning at the nanoscale by way of a focused electron beam. This process can lead to charge accumulation on surface resist when in conjunction with non-conductive substrate materials, impacting lithographic quality producing egregious shape placement inaccuracies. Current practice requires use deposited metal or conductive polymer film facilitate dissipation surface. Such films are often unstable, incompatible and/or be difficult...